• Journal of Oral Medicine and Pain
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• v.9 no.1
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• pp.127-138
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• 1984

The author had tried to identify the sex from single tooth by detecting F-body of Y-chromosome in the nucleus of the dental pulp cells of 70 persons aged from 4 to 61 years under a fluorescent miscroscope. The results were as follows : 1. In the cell nuclei of male and female dental pulp at refrigeratory, the rate of F-body appearancd ranged 42-86%(average 61.06%) in male, while it was 0-6%(average 1.86%) in female, indicationg that male could be distinctly differentiated from female by F-body. 2. With male and female dental pulp puterfide by leaving in at room temperature, the rate of F-body appearance ranged 35-58%(average 48.20%) in male, 1-3%(average1.70%) in female, indicating that it was possible to distinguish male and female by F-body. 3. Even in heat-treated male teeth at $100^{\circ}C$,10 mins, the rate of F-body appearace proved to be 32-56%(averaged 42.50%), also indicating the possibility of identifying male. 4. When detecting of F-body in process of time, the rate of F-body appearance did not show major charges. 5. It was reaffirmed that F-body detection method was a positive determination method of male.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.210-210
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• 2011

The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

• Membrane and Water Treatment
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• v.11 no.4
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• pp.303-312
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• 2020

This study aims to investigate at a laboratory scale fluorides removal from an industrial wastewater having excessive F^- concentration through a hybrid process combining neutralization and membrane separation. For the membrane separation operation, both Reverse Osmosis (RO) and Nanofiltration (NF) were investigated and confronted. The optimized neutralization step with hydrated lime allowed reaching fluoride removal rates of 99.1± 0.4 %. To simulate continuous process, consecutive batch treatments with full recirculation of membrane process brines were conducted. Despite the relatively high super saturations with respect to CaF₂, no membrane cloaking was observed. The RO polishing treatment allowed decreasing the permeate fluoride concentration to 0.9± 0.3 mg/L with a fluoride rejection rate of 93± 2% at the optimal transmembrane pressure of around 100 psi. When NF membrane was used to treat neutralization filtrate, the permeate fluoride concentration dropped to 1.1± 0.4 mg/L with a fluoride rejection rate of 88± 5% at the optimal pressure of around 80 psi. Thus, with respect to RO, NF allowed roughly 20% decrease of the driving pressure at the expense of only 5% drop of rejection rate. Both NF and RO permeates at optimal operating transmembrane pressures respect environmental regulations for reject streams discharge into the environment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.288-289
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• 2006

We studied the effect of sol-gel processing and sintering temperature on the microwave properties of $MgCo_2(VO_4)_2$ system(MCV) which is applicable to LTCC(low-temperature cofired ceramics). The MCV was synthesized by sol-gel process using solution that contains precursor molecules for Mg, Co, and V. SEM analysis shows that the average particle size is ${\sim}1{\mu}m$ and size distribution is very uniform compared to the one prepared by conventional solid-state reaction process. Highly dense samples were obtained at the sintering temperature range of $750^{\circ}C{\sim}930^{\circ}C$. The maximum $Q{\times}f_0$ value of 55,700GHz, dielectric constant(${\varepsilon}_r$) of 10.41 and temperature coefficient(${\tau}_f$) of $-85ppm/^{\circ}C$ was obtained at the sintering temperature of $930^{\circ}C$. The superior microwave properties of sol-gel processed MCV relative to conventional solid-state reaction processed one is remarkable especially at lower sintering temperatures such as $750^{\circ}C$ and $800^{\circ}C$.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.5 no.1
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• pp.16-39
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• 1995

From July 8 to September 2 1994, asbestos exposure level among asbestos textile workers was surveyed. Six plants out of plants in Korea were selected for this study. In addition to the exposure level, the relationship between the level of exposure and some factors affecting exposure were studied. Also, using historical data of asbestos concentrations in asbestos textile plants plus current data, trend of asbestos exposure level could be introduced. Historical exposure level was estimated on the basis of these data. The main results of this study are follows. 1. Average concentration of all six plants surveyed was 1.54 f/cc, and range of those concentrations was 0.03 - 11.58 f/cc. The minimum average concentration was 0.32 f/cc and the maximum was 8.04 f/cc which is four times higher than the Korean standard. A wide difference of exposure level among the workers of different plants was observed. In three plants, the half of all the plants surveyed, their average concentrations exceeded the Korean standard, and those in all the plants exceeded the ACGIH TLV. 2. Among total 56 samples, 22 samples(39%) were in excess of the Korean standard, and 53 samples(95%) were above the ACGIH TLV. Among 32 personal samples, 15 samples(47%) exceeded the Korean standard, and 30 samples(94%) exceeded the ACGIH TLV. Among 24 area samples excluding a few samples collected in office area, seven samples exceeded the Korean standard, and 23 samples( 96%) exceeded the ACGIH TLV. 3. Distributions of concentrations were observed by processes. In weaving, the highest, average concentration was 4.29 f/cc, and range was 2.61 - 11.58 f/cc. In spinning, average concentration was 2.22 f/cc, and range was 0.41 - 8.93 f/cc. In carding, average concentration was 1.98 f/cc, and range was 0.23 - 10.93 f/cc, In twisting, average concentration was 1.65 f/cc, and range was 0.21 - 9.83 f/cc. In mixing, the lowest, average concentration was 0.48 f/cc, and range was 0.22 - 1.20 f/cc. 4. All the samples from basic processes of asbestos textile plants were above the ACGIH TLV. Nineteen samples(45%) out of all these 42 samples exceeded Korean standard. Fourteen samples(58%) of total 24 personal samples, and five samples(28%) of total 18 area samples exceeded the Korean standard. Considering processes, all the samples in weaving process exceeded the Korean standard and 50 did 54% of those in spinning, 40% in carding, and 27% in twisting. 5. Trend of decreasing asbestos concentrations in asbestos textile plants was observed by time. 6. Asbestos concentrations in asbestos textile plant in 1975 were estimated to be 11.0 - 92.4 f/cc.

• Journal of Environmental Science International
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• v.12 no.4
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• pp.447-459
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• 2003

This study was carried out to develop an efficient process far the elimination of phenol pollutant from soils. An microwave-assisted process (MAP) and a conventional Soxhlet extraction method (SEM) were employed to extract phenol from two types of soils. The effects of extraction methods, aged time of the spiked soil samples, extraction solvent and extraction time on the extraction performance were compared. Our results demonstrate that the recoveries from standard soil spiked were at least 10% higher fer MAP than these f3r the conventional Soxhlet. The extraction time by MAP requires significantly shelter time (1 min) than 15 h of the conventional Soxhlet. The recoveries from non-contaminated soil spiked with phenol were also almost identical f3r above results. The reduction of the extraction times with efficiency higher than that afforded by the conventional Soxhlet technique supports the suitability of the MAP method.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.14 no.4
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• pp.49-54
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• 2015

The fabrication of a focal length-correcting lens called the F-theta lens was performed by a 3D printer. The fabricated lenses were characterized by transmittance and reflectance measurements. The optical properties of the lens, such as scattering or transmittance efficiency, were analyzed with respect to the wavelength (red, green, and blue) and the surface roughness of the lens. There was almost no shape aberration on the focus location of 0 degrees, but elliptical focus shapes were found at 1 and 2 degrees of the laser incidence angle. The developed process is expected to be used for the quick fabrication of lenses with low costs and quick turn-out. By improving the surface roughness during postprocessing, the optical properties are expected to be comparable to commercial lens quality.

• Journal of Microbiology and Biotechnology
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• v.21 no.4
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• pp.347-358
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• 2011

Fomitopsis palustris, a brown-rot basidiomycete, causes the most destructive type of decay in wooden structures. In spite of its great economic importance, very little information is available at the molecular level regarding its complex decay process. To address this, we generated over 3,000 expressed sequence tags (ESTs) from a cDNA library constructed from F. palustris. Clustering of 3,095 high-quality ESTs resulted in a set of 1,403 putative unigenes comprising 485 contigs and 918 singlets. Homology searches based on BlastX analysis revealed that 78% of the F. palustris unigenes had a significant match to proteins deposited in the nonredundant databases. A subset of F. palustris unigenes showed similarity to the carbohydrateactive enzymes (CAZymes), including a range of glycosyl hydrolase (GH) family proteins. Some of these CAZyme-encoded genes were previously undescribed for F. palustris but predicted to have potential roles in biodegradation of wood. Among them, we identified and characterized a gene (FpCel45A) encoding the GH family 45 endoglucanase. Moreover, we also provided functional classification of 473 (34%) of F. palustris unigenes using the Gene Ontology hierarchy. The annotated EST data sets and related analysis may be useful in providing an initial insight into the genetic background of F. palustris.

• Progress in Superconductivity
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• v.8 no.1
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• pp.22-26
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• 2006

Total Fluorine content in the precursor solution for MOD processing of YBCO coated conductors can be significantly reduced by synthesizing precursor solution with F-free Y & Cu precursor and Barium trifluoroacetate(TFA). It was shown that crack-free and uniform precursor films were formed after calcinations in humidified oxygen atmosphere. Less than 2 hours are required to finish the calcination process, and XRD measurement shows that $BaF_2,\;CuO,\;and\;Y_2O_3$ are major constituent of calcined precursor films. Film thickness after calcination was measured to be ${\sim}2.8$ um by applying slot-die coating method. In particular, addition of Samarium shows critical current of Ic=226 A/cm-w($Jc=3.4\;MA/cm^2$). Also discussed are recent developments in the reel-to-reel processing using F-free Y & Cu precursor solutions. It is shown that uniform and fast processing route to YBCO coated conductor with high Ic can be provided by employing F-free Y & Cu precursor solutions in MOD process.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.117-123
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• 2004

A 30 nm $In_{0.7}GaAs$ High Electron Mobility Transistor (HEMT) with triple-gate has been successfully fabricated using the $SiO_2/SiN_x$ sidewall process and BCB planarization. The sidewall gate process was used to obtain finer lines, and the width of the initial line could be lessened to half by this process. To fill the Schottky metal effectively to a narrow gate line after applying the developed sidewall process, the sputtered tungsten (W) metal was utilized instead of conventional e-beam evaporated metal. To reduce the parasitic capacitance through dielectric layers and the gate metal resistance ($R_g$), the etchedback BCB with a low dielectric constant was used as the supporting layer of a wide gate head, which also offered extremely low Rg of 1.7 Ohm for a total gate width ($W_g$) of 2x100m. The fabricated 30nm $In_{0.7}GaAs$ HEMTs showed $V_{th}$of -0.4V, $G_{m,max}$ of 1.7S/mm, and $f_T$ of 421GHz. These results indicate that InGaAs nano-HEMT with excellent device performance could be successfully fabricated through a reproducible and damage-free sidewall process without the aid of state-of-the-art lithography equipment. We also believe that the developed process will be directly applicable to the fabrication of deep sub-50nm InGaAs HEMTs if the initial line length can be reduced to below 50nm order.