• Korean Journal of Plant Tissue Culture
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• v.28 no.1
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• pp.7-13
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• 2001

Calli were induced from diploid and haploid tobacco after 4 weeks and maintained on MS medium with combination of 2.0 mg/L 2,4-D,0.1 mg/L BAP and 2.0 mg/L kinetin. Suspension cells were screened through 65 $\mu$m-nylon mesh and 100 $\mu$m-mesh, then they were smeared on selection medium combined with cadmium and PFP by using the low melting agarose of 0.8%. After 30days smeared cultures of the medium the cell was treated with 500 $\mu$M and 1000 $\mu$M to select the resistant cell line were selected. Plant regeneration was induced from the selected cell lines on medium with 0.5, 1.5, 2.0 mg/L BAP and on media with combination of auxin and BAP under 500 $\mu$M and 1000 $\mu$M cadmium. At this time, plant regeneration was achived on cadmium free medium. In case of haploid, occurred from the cell line which is selected in medium with cadmium and PFP. In case of diploid regeneration occurred is in the medium with cadmium alone. The plantlet regenerated from cadmium resistant calli grew well in cadmium 500 $\mu$M. Protein pattern of leaf, root, stem of regenerated plants was analyzed. The quantum was 6.5188 ug/mg.fr.wt in the leaf of plant, 5.3611 ug/mg.fr.wt in the stem, 3.0213 ug/mg.fr.wt in the root. On the other hand, 5.9652 ug/mg.fr.wt. in the leaf of control, 3.5974 ug/mg.fr.wt in the stem of the control, 4.3766 ug/mg.fr.wt. in the root of the control. The one dimension bends regenerated from cadmium resistant calli resistant to cadmium in leaf were 49 involving 198.7KD etc. Disappeared were 4 involving 160.5KD etc, The protein bends were combinized were 3 involving 83.4KD etc. The bends resistant to cadmium stress in stem were 41 involving 4.3KD etc. Disappeared were 5 involving 114.8KD etc. The protein bends combinized were 6 involving 128.7KD etc. The bends which had the resistance to cadmium stress in root is 27 in volving 166,9KD etc. The bends which disappeared were 198.7KD etc. There were 5 involving 83.4KD etc.

• Horticultural Science & Technology
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• v.16 no.4
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• pp.503-507
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• 1998

This study was initiated to evaluate genetic relationship among various domestic and exotic pepper accessions using random amplified polymorphic DNA(RAPD) markers. The results suggested that the optimum conditions for PCR with random primers in Capsicum spp. could be obtained with 3mM of $MgCl_2$, 1.5U of Taq. DNA polymerase, 10ng of template DNA, $200{\mu}M$ of dNTPs, 200nM of random primer, and $42^{\circ}C$ of annealing temperature. Sixteen random primers showing high band intensity and reproducibility were selected from 80 random primers. Primers having 70% GC content were more effective in DNA amplification than primers having 60% GC content. The total 93 DNA bands including 71 polymorphic bands and 22 monomorphic bands were obtained with selected 16 random primers for 31 pepper cultivars and lines. About 4.4 polymorphic bands per primer were produced. Similarity coefficients were calculated by using 71 polymorphic bands and dendrogram based on the similarity coefficient showed clear classification of 31 peppers into three Capsicum species of Capsicum annuum, Capsicum chinense and Capsicum chacoense.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.225-231
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• 2006

.고상반응법 (solid state reaction)합성된 ZnS:Mn,Cu,Cl 형광체는 약 $20^{\sim}25{\mu}m$ 의 구형이고, Cubic/hexagonal 구조를 보였다. Electroluminescent device(ELD)는 실크 스크린된 형광층(ZnS:Mn,Cu,Cl)/유전체층 ($BaTiO_3$)으로 구성되었으며, 각층은 $30^{\sim}50{\mu}m,\;50^{\sim}60{\mu}m$ 정도로 도포 하였다. 100 V-400 Hz 의 구동조건에서, ELD 의 백색 발광은 450 nm, 480 nm 픽에서 각각 $Cl_s{\to}Cu^{+}\;_{Zn},\;Cl_s{\to}Cu^{2+}\;_{Zn}$ 전이에 의해 중첩된 청색, 녹색 밴드의 발광과, 580 nm 픽에서 Mn 의 $^{4}T_1{\to}^{6}A_1$ 전이에 의한 황색 밴드의 발광으로 이루어진다. Cu 농도의 증가에 따라 450 nm 의 발광 밴드의 휘도는 감소하며 580 nm 의 발광 밴드의 휘도가 증가하였고 발광 휘도가 향상되었다. 즉, 색온도가 높은 cold white(10000 K)에서 색온도가 낮은 Warm white(3000 K) 로 변한다. 이것은 450 nm 의 발광 밴드가 580 nm 의 발광 밴드에 흡수되는 에너지 전이 (Energy transfer) 현상에 기인한다. ZnS:Mn,Cu,Cl 의 Mn 1.5 wt %, Cu 2.5 wt.% 에서 최적 발광 휘도를 보이며, 100 V-400 Hz 에서 약 $12cd/cm^2$이였다.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.421-422
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• 2008

In this paper, CMOS RF front-end circuits for an L1/L5 dual-band global positioning system (GPS)/Galileo receiver are designed in $0.13\;{\mu}m$ CMOS technology. The RF front-end circuits are composed of an RF single-to-differential low noise amplifier, an RF polyphase filter, two down-conversion mixers, two transimpedance amplifiers, a IF polyphase filter, four de-coupling capacitors. The CMOS RF front-end circuits provide gains of 43 dB and 44 dB, noise figures of 4 dB and 3 dB and consume 3.6 mW and 4.8 mW from 1.2 V supply voltage for L1 and L5, respectively.

• The Journal of Engineering Geology
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• v.24 no.3
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• pp.411-421
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• 2014

The purpose of this study is to analyze the key factors that contribute to landslide causes through swelling clay minerals and terrain analysis in landslide sites taken place of in Yongin city, Gyeonggi-do, 2011. The study was conducted based on field survey by XRD (X-ray Diffraction), XRF (X-ray fluorescence), spectroscopic analysis on soil samples obtained from landslide sites and ASTER satellite image. Illite shows absorption features; $Fe^{2+}$ and $Fe^{3+}$ at 0.9 and $1.0{\mu}m$, broad water absorption features near 1.4 and $1.9{\mu}m$, and additional Al-hydroxyl features at 2.2, 2.3 and $2.4{\mu}m$, respectively. These absorption features are consistent with the bands 5, 6, and 7 of ASTER (Advanced Spaceborne Thermal Emission and Reflection Radiometer) satellite image. Illite image was extracted using band math of $SWIR_{Illite}$. From these results, we confirmed the applicability of ASTER satellite image using identification of swelling clay minerals to landslide study.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.10
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• pp.1151-1156
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• 2012

In this paper, the baseband filter is proposed in order to maintain a constant sensitivity regardless of distances for 77 GHz automotive radar system. Using existing DCOC loop circuit can remove DC offset and also cancel differences of received power depending on the distance. Measured results show that the maximum gain is 51 dB and high pass cutoff frequency can be tuned from 5 kHz to 15 kHz. The slope of high pass filter can be tuned from -10 to -40 dB/decade for the distance compensation. The measured NF and IIP3 are 26 dB and +4.5 dBm with 4.3 mA at 1.0 V supply voltage, respectively. The fabricated die size $500{\mu}m{\times}1,050{\mu}m$ excluding the in/out pads.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.43 no.7
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• pp.626-634
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• 2015

In the present study, numerical predictions of infrared spectra for $CO_2$ molecule were conducted. Absorption coefficients of $CO_2$ which are required for simulating the spectra, were calculated by using a line-by-line method and by adopting spectroscopic parameters from the radiation databases, HITEMP2010 and CDSD-4000. Simulations were made in the 2.7, 4.3, and $15{\mu}m$ band regions, and the results were compared with the measurements of other researchers. It was found that the calculated results are well matched with the various measurements. However, in the $4.3{\mu}m$ band region, the CDSD-4000 based calculation yields a better fit to the measurement than the HITEMP2010 based calculation does.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.2
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• pp.207-212
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• 2012

In this work, a 70/140 GHz dual-band push-push voltage controlled oscillator(VCO) has been developed based on a 0.18-${\mu}m$ SiGe BiCMOS technology. The lower band and the upper band oscillation frequency varied from 67.9 GHz to 76.9 GHz and from 134.3 GHz to 154.5 GHz, respectively, with tuning voltage swept from 0.2 to 2 V. The calibrated maximum output power for each band was -0.55 dBm and -15.45 dBm. The VCO draws DC current of 18 mA from 4 V supply.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.4
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• pp.533-542
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• 2000

Analytical experiments to determine the line-of-sight temperature distribution is conducted by using spectral radiation intensities. For this study, fourteen narrow bands of $25cm^{-1}$ interval in $CO_2\;4.3{\mu}m$ band ($2,050cm^{-1}$ to $2375cm^{-1}$) are selected. The applied system is a one-dimensional gas slab filled with 100% $CO_2$ gas at 1 atm. Two types of temperature profile are tested; parabolic and boundary layer types. Three kinds of radiation calculation are used in the iteration procedure for the temperature inversion; LBL(Line by Line), SNB(Statistical Narrow Band) and WNB(WSGGM. based Narrow Band) models. The LBL solution shows perfect agreement while some error of temperature prediction is caused by radiation modeling error when using SNB and WNB models. The inversion result shows that the WNB model may be used more accurately in spectral remote sensing techniques than the traditional SNB model.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.3
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• pp.576-581
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• 2005

In this paper. the a-Si:H TFT using ferroelectric of $SrTiO_3$ as a gate insulator is fabricated on glass. High k gate dielectric is required for on-current, threshold voltage and breakdown characteristics of TFT Dielectric characteristics of ferroelectric are superior to $SiO_2$ and $Si_3N_4$. Ferroelectric increases on-current and decreases threshold voltage of TFT and also ran improve breakdown characteristics.$SrTiO_4$ thin film is deposited by e-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C\~600^{\circ}C$. Dielectric constant of ferroelectric is about 60-100 and breakdown field is about IMV/cm. In this paper, the TFT using ferroelectric consisted of double layer gate insulator to minimize the leakage current. a-SiN:H, a-Si:H (n-type a-Si:H) are deposited onto $SrTiO_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. In this paper, TFR using ferroelectric has channel length of$8~20{\mu}m$ and channel width of $80~200{\mu}m$. And it shows that drain current is $3.4{\mu}A$at 20 gate voltage, $I_{on}/I_{off}$ is a ratio of $10^5\~10^8,\;and\;V_{th}$ is$4\~5\;volts$, respectively. In the case of TFT without having ferroelectric, it indicates that the drain current is $1.5{\mu}A$ at 20gate voltage and $V_{th}$ is $5\~6$ volts. If properties of the ferroelectric thin film are improved, the performance of TFT using this ferroelectric thin film can be advanced.