• Journal of the Korean Ceramic Society
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• v.52 no.1
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• pp.19-22
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• 2015

The joining behavior of YSZ ceramics to the glasses used in the $9Al_2O_3-24ZrO_2-51SiO_2-16R_2O$ and $9Al_2O_3-24ZrO_2-51SiO_2-7La_2O_3-9R_2O$ (wt%) glass systems was investigated. The glass transition and softening temperatures were determined to be $430^{\circ}C$ and $760^{\circ}C$, respectively. The behavior of the contact angle was inversely proportional to an increase in the temperature. The Zr element in YSZ acted as a nucleation agent and contributed to the bonding behavior at the interface.

• Journal of the Korean Ceramic Society
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• v.37 no.12
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• pp.1187-1191
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• 2000

정방정형 지르코니아를 상온에서 안정화시키는 이트리아와, 지르코니아의 저온 열화을 억제하고 파괴강도의 증가에 기여하는 알루미나를 YAG(5Al$_2$O$_3$.3Y$_2$O$_3$) 졸의 형태로 m-ZrO$_2$와 알루미나의 혼합 slurry에 첨가하여, m-ZrO$_2$를 yttria 안정화 지르코니아로의 in situ 변환과 동시에 알루미나의 분산도를 향상시키고자 하였다. 20wt% 알루미나-지르코니아(YSZ)의 복합체 (20ATZ)를 1450$^{\circ}$~150$0^{\circ}C$에서 상압소결하여 0.5$mu extrm{m}$ 이하의 균일한 미세구조로 얻었다. 이 복합체는 정방정형 지르코니아와 $\alpha$-알루미나 상으로만 이루어지었고, 소결밀도 >99% TD이었다. 제조된 복합체의 파괴강도는 810 MPa로, 고상법으로 $Al_2$O$_3$와 3Y-ZrO$_2$분말로부터 제조된 시편의 682 MPa 보다 약 20% 향상되었고, 파괴인성은 5.52 MPa.m$^{1}$2/로 고상법으로 제조된 시편의 5.39 MPa.m$^{1}$2/과 비슷하였다.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.11-17
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• 2003

The effect of$ZrO_2$addition on the microstructure and electrical properties of Ni-Mn oxide NTC thermistors was studied. Major phases present in the sintered bodies of $Ni_{1.0}Mn_{2-x}Zr_xO_4$ were the solid solutions of Ni-Mn-Zr oxides with a cubic spinel structure and the $ZrO_2$ with a tetragonal structure. The $ZrO_2$ was formed by the partial decomposition or incomplete formation of the Ni-Mn-Zr oxides during sintering. With increasing the amount of added $ZrO_2$, the $ZrO_2$ phase increased. The relationship between log resistivity (log p) and the reciprocal of absolute temperature (1/T) of the NTC thermistors prepared was linear, indicative of NTC characteristics. The resistivity, B constant and activation energy of the thermistors increased with increasing $ZrO_2$ content.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.349-351
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• 2011

The formation of oxide superconducting phase fabrication of superconducting wire materials and fabrication of precise superconducting material were studied for developing superconductor application technique. The $ZrO_2$ addition reduced the particle size $BaZrO_3$ trapped in the matrix after the sintering growth. The added $ZrO_2$ was converted to fine particles of $BaZrO_3$ which is the conventional sintering temperature for YBaCuO, $Y_2Ba_1Cu_1O_5$ and CuO are formed as by products of the reaction between $ZrO_2$ and YBaCuO phase. The formation of highly $BaZrO_3$ particle appears to be responsible for the refinement of $BaZrO_3$ phase after the citric acid sintering process.

• Journal of the Korean Ceramic Society
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• v.25 no.4
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• pp.373-379
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• 1988

$\alpha$-Al2O3-15m/o ZrO2 powder was prepared by a sol-gel method from boehmite and zirconium acetate. The transformation temperature of boehmite to $\alpha$-Al2O3 in the system Al2O3-ZrO2 was increased due to the coupled crystallization. On the other hand, the transformation temperature from boehmite to $\alpha$-Al2O3-15m/o ZrO2 could be prepared at 110$0^{\circ}C$ for 100min. The specific surface area of the product of $\alpha$-Al2O3-15m/o ZrO2 was 13.2$m^2$/g.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.439-444
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• 2005

We investigated the structural and electrical properties of BLT films grown on Si covered with $ZrO_{2}$ buffer layer. The BLT thin film and $ZrO_{2}$ buffer layer were fabricated using a metalorganic decomposition method. The electrical properties of the MFIS structure were investigated by varying thickness of the $ZrO_{2}$ layer. AES and TEM show no interdiffusion and reaction that suppressed using the $ZrO_{2}$ film as a buffer layer The width of the memory window in the C-V curves for the MFIS structure decreased with increasing thickness of the $ZrO_{2}$ layer. It is considered that the memory window width of MFIS is not affected by remanent polarization. Leakage current density decreased by about four orders of magnitude after using $ZrO_{2}$ buffer layer. The results show that the $ZrO_{2}$ buffer layers are prospective candidates for applications in MFIS-FET memory devices.

• Journal of the Korean Ceramic Society
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• v.30 no.8
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• pp.635-642
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• 1993

To obtain a higher dielectric constant material, we investigated Ca substitution for Pb in PbZrO3. In this study, the four mixtures of (Pb0.68Ca0.32)ZrO3, (Pb0.65Ca0.37)ZrO3, (Pb0.63Ca0.37)ZrO3, and (Pb0.60Ca0.40)ZrO3 were prepared by coprecipitation reaction of Pb(NO3)2, ZrOCl2, and CaCl2 with (NH4)2CO3 and NH4OH in aqueous solution. The (Pb1-xCax)ZrO3 with different x mole fractions (x=0.35, 0.37) showed not only high dielectric constant, but also high Q values and low temperature coefficient of the capacitance.

• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.909-915
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• 2003

Anodic oxide films on aluminum play an important role as a dielectrics in aluminum electrolytic capacitor. In order to obtain the high capacitance, ZrO$_2$ films were coated on aluminum foils by sol-gel method and then, the properties of anodized films were studied. The coating and drying of the films were repeated 4-10 times and annealed at 300～$600^{\circ}C$ and the triple layer of ZrO$_2$/Al-ZrO$_{x}$ /Al$_2$O$_3$ was formed onto aluminum substrates after anodizing of ZrO$_2$/Al film. The thickness of $Al_2$O$_3$ layer was decreased with increasing the annealing temperature due to the densification of ZrO$_2$ film. The ZrO$_2$ films were crystallized even at 30$0^{\circ}C$ and showed nanocrystalline structure. The. capacitance of aluminum foil annealed at low temperature was higher than that at high temperature. The increase of capacitance was due to the high capacitance of ZrO$_2$ film annealed at low temperature. The capacitance of ZrO$_2$ coated aluminum increased about 3 times compared to that without a ZrO$_2$ layer after anodizing to 400 V. From these results, the aluminum foils with composite oxide layers are found to be applicable to the aluminum electrolytic capacitor.

• Korean Journal of Materials Research
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• v.2 no.3
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• pp.172-179
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• 1992

$Al_2O_3/ZrO_2$ composites were fabricated by pressureless sintering from commercial powders and/or nano composite powder of $Al_2O_3/ZrO_2$. The Properties of the composites such as density, strength, hardness and fracture toughness were evaluated. Microstructures and fracture surfaces ware also examined. The flexural strength remains unchanged(~640 MPa) as long as the content of commercial powders is not extreamly high, and depends on microstructures of the composites. Fracture toughness(4.3-5.3 $Mpa{\cdot}m^{1/2}$) increases with increasing content of commercial powders. Fractography shows that failure-initiating sources are 1)surface flaws resulting from machining damage, 2)crack-shaped voids formed due to $ZrO_2$ agglomeration, and 3)surface separation caused by inhomogeneous blending and by sinterability difference between nato composite powder and commercial powders of $Al_2O_3/ZrO_2$. Failure mode of the composites was mainly transgranular.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.170-175
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• 2001

It was possible to grow the $Al_{2}O_{3}$ based $Y_{3}A_{5}O_{12}(YAG),ZrO_{2}$ binary and ternary eutectic fibers using micro-pulling down method with a growing rate of 0.1~15 mm/min. While $Al_{2}O_{3}/ZrO_{2}$ showed cellular-lamellar structure, $Al_{2}O_{3}$/YAG and $Al_{2}O_{3}$/YAG/$ZrO_{2}$ternary eutectic fibers showed homogeneous Chinese script lamellar structures. The microstructures of $Al_{2}O_{3}/ZrO_{2}$ binary eutectic fibers changed with solidification rate from lamellar pattern to cellular structure. The interlamellar spacing agreed with the inverse-square-root dependance on pulling rate according to $\lambda$=$kv_p\;{-1/2}$. $Al_{2}O_{3}/ZrO_{2}$ binary eutectic fibers recorded the highest tensile strength of about 1560MPa at room temperature. $Al_2O_3/YAG/ZrO_2$ternary eutectic fiber showed excellent thermal stability to $1200^{\circ}C$ without significant decrease. The maximum strength of ternary eutectic fibers recorded were 1100MPa at $25^{\circ}C$ and 970MPa at $1200^{\circ}C$, respectively.