• Applied Microscopy
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• v.52
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• pp.1.1-1.8
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• 2022

As semiconductor device architecture develops, from planar field-effect transistors (FET) to FinFET and gate-all-around (GAA), there is an increased need to measure 3D structure sidewalls precisely. Here, we present a 3-Dimensional Atomic Force Microscope (3D-AFM), a powerful 3D metrology tool to measure the sidewall roughness (SWR) of vertical and undercut structures. First, we measured three different dies repeatedly to calculate reproducibility in die level. Reproducible results were derived with a relative standard deviation under 2%. Second, we measured 13 different dies, including the center and edge of the wafer, to analyze SWR distribution in wafer level and reliable results were measured. All analysis was performed using a novel algorithm, including auto fattening, sidewall detection, and SWR calculation. In addition, SWR automatic analysis software was implemented to reduce analysis time and to provide standard analysis. The results suggest that our 3D-AFM, based on the tilted Z scanner, will enable an advanced methodology for automated 3D measurement and analysis.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1438-1441
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• 2005

To establish of standard technique of nano-length measurement in 2D plane, new AFM system has been designed. In this system, measurement uncertainty is dominantly affected by the Abbe error of XY scanning stage. No linear stage is perfectly straight; in other words, every scanning stage is subject to tilting, pitch and yaw motion. In this paper, an AFM system with minimum offset of XY sensing is designed. And XY scanning stage is designed to minimize rotation angle because Abbe errors occur through the multiply of offset and rotation angle. To minimize the rotation angle optimal design has performed by maximizing the stiffness ratio of motion direction to the parasitic motion direction of each stage. This paper describes the design scheme of full AFM system, especially about XY stage. Full range of fabricated XY scanner is $100um\times{100um}$. And tilting, pitch and yaw motion are measured by autocollimator to evaluate the performance of XY stage. Using this AFM system, 3um pitch specimen was measured. As a result, the uncertainty of total system has been evaluated.

• Journal of the Korean Society for Precision Engineering
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• v.15 no.3
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• pp.99-106
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• 1998

Recently, scientists introduced a new type of microscope capable of investigating nonconducting surfaces in an atomic scale, which is called AFM (Atomic Force Microscope). It was an innovative attempt to overcome the limitation of STM (Scanning Tunnelling Microscope) which has been able to obtain the image of conducting surfaces. Surfaces of samples are imaged with atomic resolution. The AFM is an imaging tool or a profiler with unprecedented 3-D resolution for various surface types. The AFM technology, however, leaves a lot of room for improvement due to its delicate and fragile probing mechanism. One of the room for improvements is gap control between probe tip and sample surface. Distance between probe tip and sample surface must be kept in below one Angtrom in order to measure the sample surface in Angstrom resolution. In this paper, AFM system modeling, experimental system identification and control scheme based on system identification are performed and finally sample surface is measured by home-built AFM with such a control scheme.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2000.11a
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• pp.643-648
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• 2000

The AFM is an imaging tool or a profiler with unprecedented 3-D resolution for various surface types. The AFM technology, however, leaves a lot of room for improvement due to its delicate and fragile probing mechanism. The distance between probe tip and sample surface must be maintained in below the nano meter level in order to measure the sample surface in Angstrom resolution. In this paper, the mode analysis of AFM system, modification based on the mode analysis are performed and finally the sample surface is measured by the home-built AFM.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.1439-1443
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• 2007

In this paper, vibration reduction techniques of a voice coil motor (VCM) actuator are presented for AFM imaging system. The damping coefficient of the actuator driven by VCM with a flexure hinge is quite low and it cause the about 30dB peak amplitude response at the resonance frequency. To decrease this peak response, we design and apply elliptical band-stop filters to xy and z axis VCM actuator. Frequency response of each actuator with filter is measured to verify the effect of the filters. As a sensor, capacitive sensor is used. Vibration reduction rate of the xy actuator with the filter is also measured while real AFM scanning condition. As another method, closed loop control with the capacitive sensor is applied to the xy axis actuator to add an electrical damping effect and vibration reduction rate measured. These vibration reduction rates with each method are compared. In the case of z axis actuator, the frequency response of force (gap) control loop is measured. For comparison, the frequency response using a conventional PID controller is also obtained. Finally, the AFM image of a standard grid sample is measured with the designed controller to analyze the effect in the AFM imaging.

• International Journal of Precision Engineering and Manufacturing
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• v.5 no.3
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• pp.19-25
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• 2004

Pitch measurements of 150 nm one-dimensional grating standards were carried out using a contact mode atomic force microscopy with a high resolution three-axis laser interferometer. This measurement technique was named as the 'nano-metrological AFM'. In the nano-metrological AFM, three laser interferometers were aligned precisely to the end of an AFM tip. Laser sources of the three-axis laser interferometer in the nano-metrological AFM were calibrated with an I$_2$ stabilized He-Ne laser at a wavelength of 633 nm. Therefore, the Abbe error was minimized and the result of the pitch measurement using the nano-metrological AFM could be used to directly measure the length standard. The uncertainty in the pitch measurement was estimated in accordance with the Guide to the Expression of Uncertainty in Measurement (GUM). The primary source of uncertainty in the pitch-measurements was derived from the repeatability of the pitch-measurements, and its value was about 0.186 nm. The average pitch value was 146.65 nm and the combined standard uncertainty was less than 0.262 nm. It is suggested that the metrological AFM is a useful tool for the nano-metrological standard calibration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.79-80
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• 2009

The local oxidation using an atomic force microscopy (AFM) is useful for Si-base fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC poly types, 4H-SiC is the most attractive poly type due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, $0.01{\sim}0.025\;{\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50%. The height of the fabricated oxide pattern ($1{\sim}3\;nm$) on SiC is similar to that of typically obtained on Si ($10^{15}{\sim}10^{17}\;cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. Whereas the simulated electric field on Si surface is constant ($5\;{\times}\;10^7\;V/m$), the electric field on SiC surface increases with increasing the doping concentration from ${\sim}10^{15}$ to ${\sim}10^{17}\;cm^{-3}$. We demonstrated that a specific electric field ($4\;{\times}\;10^7\;V/m$) and a doping concentration (${\sim}10^{17}\;cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.6
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• pp.316-321
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• 1999

Disk type single phase switched reluctance motor which is a simple robust construction, simple control circuit and low manufacturing cost, has a characteristics of axial and radial flux machines. However, because this DSPSRM has a complicated magnetic circuit, it is difficult to analyze the design characteristics.. In this study, the calculation of design parameter based on the conventional design theory of electric machine and the characteristics analysis by computer simulation was performed. As the DSPSRM has the characteristics of both AFM and RFM, it is difficult to analyze its characteristics by the 2D FEM. 3D FEM was applied in the analysis of energy distribution and approximated calculation of torque characteristics with rotor positions. With analysis results, prototype of DSPSRM is manufactured.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.9
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• pp.5756-5762
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• 2015

This paper has studied the lotus effect of the biomimetic engineering that is inspired from the nature. The biomimetic engineering has been improved with the nanotechnology. This paper has observed the hydrophobic property of the surface of the lotus leaf by using the scanning electron microscope (SEM) and atomic force microscope (AFM). The nano-scale of the hydrophobic lotus leaves are maximized the surface tension of water. The general grass leaf has been compared with the lotus leaf through the SEM and AFM - in the viewpoint of the 2D and 3D morphology. Also, The pre-existing of the hydrophobic theory was investigated and compared with the experimental observations for the lotus leaf.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.632-636
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• 2009

The local oxidation using an atomic force microscopy (AFM) is useful for Si-based fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC polytypes, 4H-SiC is the most attractive polytype due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, 0.01-0.025 ${\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50 %. The height of the fabricated oxide pattern (1-3 nm) on SiC is similar to that of typically obtained on Si ($10^{15}^{\sim}10^{17}$ $cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. We demonstrated that a specific electric field (4 ${\times}$ $10^7\;V/m$) and a doping concentration ($^{\sim}10^{17}$ $cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.