• Proceedings of the KIEE Conference
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• summer
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• pp.518-520
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• 2004

In these days, there is a demand to develop fault current limiters(FCLs) to reduce excessive fault current and protect electrical equipments which are installed in the transmission and distribution power systems. We considered the resistive superconducting FCLs among the various kinds of FCLs. In this study, in order to develop the resistive superconducting FCL of 6.6kV 200A $3\phi$, we designed the new mask pattern for etching YBCO films by means of numerical analysis method, current limiting experiments and visualization of bubbles in films and investigated dielectric performance of the designed mask by using elecrtostatic numerical analysis method and breakdown experiments. We etched YBCO films by using the newly designed mask, connected the etched films in series and in parallel, and designed the 6.6kV resistive SFCL and then we observed the current limiting characteristics of the SFCL.

• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.567-574
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• 2016

We have analyzed chemical properties of polysiloxane and polysilazane films, respectively, as sealing materials for electrostatic chuck (ESC) and have investigated the possibility of polysilazane as an alternative sealant to polysiloxane. It has been revealed that Si-O with organic bonding ($Si-CH_3$) existed in polysiloxane films compared to only pure Si-O bonding in polysilazane films. The sealing property of polysilazane has been found outstanding even in a short time of application. In the polysiloxane films containing $H_2O$, pin holes have been found possibly due to $CO_2$ gas evolution, and low adhesion with Si substrate has been observed after heat stress test in connection with the existence of organic bonding. After acid resistance test in 0.5 vol.% HF, 68 wt.% $HNO_3$, and 37 wt.% HCl solution, polyilazane films have shown a longer survival times. Compared to the conventional polysiloxane sealant, polysilazane is expected as a new sealing material because of good thermal and chemical stability.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.4
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• pp.382-389
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• 1997

We present the results on the applicability of the polycrystalline AIN thin films for a surface acoustic wave filter operating at 800 MHz frequency. The films show the FWHM of 3 .deg. from th X-ray rocking curve, which indicates that the c-axis of the films is pre- ferentially oriented along the growth direction. The fabricated band pass filters exhibit the center frequency of 865 MHz with 3dB band-width of 45 MHz. From the measured frequency response, the electro-mechanical coupling constant of 0.8% and the SAW velocity of 5,709 m/s are obtained. Thus, we conclude that the sputtered AIN films are feasible for the fabrication of uper UHF band SAW filters.

• Progress in Superconductivity
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• v.5 no.2
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• pp.136-140
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• 2004

We fabricated and tested a resistive superconducting fault current limiters (SFCL) operated at 3.8 ㎸ based on YBCO thin films. The SFCL was composed of 7 components connected in series. Each component was designed to be capable of current limiting at 600 V, and has a SiC shunt resistor ( $R_{s}$) of 40 Ω in Parallel. Short circuit tests were carried out fur 0 and 90 degree faults lasting fur 5 cycles. The test results showed that the 7 components were quenched simultaneously under the safe quenches and evenly shared the applied voltage. The SFCL successfully suppressed the fault currents below 94 $A_{peak}$ within the quarter cycle after fault.t.t.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.749-751
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• 2002

$(Pb_{1-x}Sr_x)TiO_3$ $(0.6{\leq}x{\leq}0.8)$ thin films were prepared by the MOD method for tunable microwave device application and their characteristics were investigated as a function of Sr content(x) and applied field. Thin films showed a homogeneous microstructure and the tetragonality(c/a) was slightly decreased with increasing Sr content. With increasing Sr content, Curie temperature of the thin films showed a decreasing tendency. For the PST thin films, the dielectric constant at room temperature, Tc, and $tan{\delta}$ were 750~1900, $-70^{\circ}{\sim}-30^{\circ}C$ and 0.025~0.04, respectively.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.623-626
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• 1995

High coercivity thin $Fe_{3}O_{4}$ and ${\gamma}-Fe_{2}O_{3}$ films were deposited on Si substrate under well controlled $O_{2}$ partial pressure by dcreactive magnetron sputtering. The coercivity of as-deposited maggnetite films is below 640 Oe. After cxidizing at $360^{\circ}C$ for 10 minutes, the films transform to maghemite ${\gamma}-Fe_{2}O_{3}$ completely, and the coercivity increases greatly to 2100~4120 Oe, depending on modification of not with minor addition of Co or/and Mn. The orign of coercivity enhancement is attributed mainly to magnetic anisotropy arisen from interfacial stress. The addition of 5 at% Co and 5 at% Mn greatly enhances coercivity and squareness ratio. These films are potential for ultra-high density recording applications.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.328-334
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• 2000

DLC (Diamond-Like Carbon) films were deposited by ECR-PECVD (electron cyclotron resonance plasma-enhanced chemical vapor deposition) method with the variation of substrate bias voltage under the others are constant except it. We have investigated the ion bombardment effect induced by the substrate bias voltage on films during the deposition of film. The characteristics of the film were analyzed using the Dektak surface profiler, SEM, FTIR spectroscopy, Raman spectroscopy and Nano Indentation tester. FTIR spectroscopy analysis shows that the amount of dehydrogenation in films was increased with the increase of substrate bias voltage and films thickness was decreased. Raman scattering analysis shows that integrated intensity ratio $(I_D /I_G)$ of the D and G peak was increased as the substrate bias voltage increased, and films hardness was increased. From these results, it can be concluded that films deposited at this experimental have the enhanced characteristics of DLC because of the ion bombardment effect on films during the deposition of film.

• Journal of Korean Ophthalmic Optics Society
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• v.1 no.2
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• pp.63-69
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• 1996

D.c conductivity and optical transmittance of amorphous ($As_2Se_3$)Ag, (x =0, 2, 5, 10mol%) thin films were measured in order to find effects of Ag additives on electrical and optical properties of the films. The d.c. activation energy and the optical gap decreased with increasing Ag contents the Urbach tail was approximately unchangeable for variation of Ag contents. For Ag contents of 5mol% and less, the rate of decrease of the d.c activation energy was more rapidly than that of the optical gap with increasing Ag contents. For Ag contents more than 5mol%, the rate of decrease of the d.c activation energy and the optical gap were nearly the same each other with decreasing Ag contents. So it was appeared that the Fermi level of the films comes close to the mobility edge for Ag contents of 5mol% and less, and the mobility edge comes close the Fermi level for Ag contents more than 5mol%.

• Journal of the Korean Applied Science and Technology
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• v.31 no.3
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• pp.352-358
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• 2014

We were investigated the stability through the electrochemical characteristics of saturated fatty acid(C12, C14, C16, C18) monolayer LB films by cyclic voltammetry. Saturated fatty acid monolayer LB films was deposited on the indium tin oxide(ITO) glass by the LB method. The electrochemical properties were measured by cyclic voltammetry with a three-electrode system in 0.1 N $NaClO_4$ solution. The measuring range was continuously oxidized to 1650 mV, with an initial potential of -1350 mV was reduced. Scanning rates of 50, 100, 150, 200, and 250 mV/s were set. As a result, LB monolayer films of saturated fatty acid were appeared on irreversible processes by the oxidation current from the cyclic voltammogram. Diffusion coefficient(D) of saturated fatty acid(C12, C14, C16, and C18) was calculated 22.231, 2.461, 7.114 and 2.371 ($cm^2s^{-1}{\times}10^{-4}$) in 0.1 N $NaClO_4$ solution, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.131-131
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• 2000

We witnessed the enhancement of mangetoresistance (MR) in La0.75Ca0.25MnO3 thin films grown on Si (100) substrates by RF magnetron sputtering. The films are polycrystalline with (100) and (110) orientations. The lattice constants of films are reduced as much as 0.9% compared to the one of the bulk sample, which proves that the compressive stress on films was imposed by Si sbustrate. It is found that the MR value (Δ$\rho$/$\rho$0) of films are 0.33, 0.29 and 0.27 under a magnetic field of 1.5T for each films with deposition temperature of $700^{\circ}C$, 75$0^{\circ}C$ and 80$0^{\circ}C$, respectively. The correlation between the MR values and lattice constants of films is discussed. It is concluded that the compressive stress on films cause the enhancement of MR values of thin films grown on Si (1000 substrates. Some mechanism of compressive stress induced by Si substrate is suggested.