• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.309-314
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• 1997

The electrical properties of thick PZT films deposited on Ag-Pd/$Al_2O_3$ and Pt electrodes were carefully investigated according to the annealing methods and the sub-strates. For electrical properties measurements, silver was deposited on PZT films as top electrode. The crystallogaphic structure of the films was examined by standard X-ray diffraction method to determine which crystalline phase was present. Dielctric constant was measured at 1 kHz, 10 mV by using a HP4284A. The electrical properties of PZT films with 3 wt% PbO addition were not improved. It was also found that the Ag-Pd layer has a good possibility as electrode instead of Pt. It seems clear from the present experiments that the thick PZT films having the good electrical properties can certainly be obtained using spin on technique combined with rapid thermal annealing.

• Bulletin of the Korean Chemical Society
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• v.12 no.5
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• pp.499-504
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• 1991

EPR spectra of the high $T_c$ superconductor $YBa_2Cu_3O_{7-y}$ (YBCO) doped with $Pd^{2+} or Zn^{2+}$ have been measured at several temperatures and dopant concentrations. The spectral intensity of $YBa_2({Cu_{1-x}}{Pd_x})_3O_{7-y}$ is proportional to the dopant concentration. The behavior of $YBa_2(Cu_{1-x}Zn_x)_3O_{7-y}$ is quite different: the spectral intensity remains almost constant up to x=0.10 and then increases rapidly above x=0.10. The results are interpreted in terms of localized and antiferromagnetically spin-paired d holes in both CuO chain and planes. The $Pd_{2+}$ ion substitutes on the CuO chain consisting of "CuOCu dimers", and a $Cu_{2+}$ ion with an unpaired spin is gene rated for each $Pd_{2+}$ ion substituted. On the other hand, $Zn_{2+}$ substitutes on the CuO planes, and all or most of the spins in the two-dimensional plane manage to pair up in the region of low dopant concentration. When the dopant concentration exceeds a certain limit, it becomes more difficult for the spins to find partners, and the number of unpaired spins increases rapidly with increasing dopant concentration. The $Zn_{2+}$ ion is more effective than the $Pd_{2+}$ ion in suppressing the superconductivity of YBCO. This is attributed to the fact that $Zn_{2+}$ substitutes on the CuO planes which are mainly responsible for the superconductivity, while $Pd_{2+}$ substitutes on the CuO chain which is of secondary importance in the superconductivity.

• Journal of Technologic Dentistry
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• v.19 no.1
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• pp.21-35
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• 1997

The Ag-Pd-Cu alloys containing a small amount of Au is commonly used for dental purposes, because this alloy is cheaper than Au-base alloys for clinical use. However, the most important characteristic of this alloy is age-hardenability, which is not exhibited by other Ag-base dental alloys. The specimens used were Ag-20Pd-20Cu ternary alloy and Au addition alloy. These alloys were melted and casted by induction electic furace and centrifugal casting machine in Ar atmoshpere. These specimens were solution treated for 2hr at $800^{\circ}C$ and were then quenched into iced water, and aged at $350{\sim}550^{\circ}C$ Age-hardening characteristics of the small Au-containing Ag-pPd-Cu dental alloys were investigated by means of hardness testing, X-ray diffraction and electron microscope observations, electrical resistance, differential scanning calorimetric, emergy dispersed spectra and electron probe microanalysis. Principal results are as follows : Hardening occured in two stages, I. e., stage I in low temperature and stage II in high temperature regions, during continuous aging. The case of hardening in stage I was due to the formation of the Llo type face centered tetragonal PdCu-ordered phase in the grain interior and hardening in stage I was affedted by the Cu concentration. In stage II, decomposition of the $\alpha$ solid solution to a PdCu ordered phase(L1o type) and an Agrich ${\alpha}2$ phase occurred and a discontiunous precipitation occurred at the grain boundary. Form the electron microscope study, it was concluded that the cause of age-hardening in this alloy is the precipitation of the PdCu ordered phase, which has AuCu I type face-centered tetragonal structure. Precipitation procedure was ${\alpha}\to{\alpha}+{\alpha}2+PdCu\to{\alpha}1+{\alpha}2+PdCu$ at Pd/Cu = 1 Ag-Pd-Cu alloy is more effective dental alloy as ageing treatment and is suitable to isothermal ageing at $450^{\circ}C$.

• Journal of the Korean Magnetics Society
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• v.15 no.1
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• pp.1-6
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• 2005

In this study we investigate the electronic structure and magnetism of transition metal (TM = Ti, Cr, Mn, Fe, Co, Ni, Ru, Pd, Ag ) deped ZnO($TM_{0.25}Zn_{0.75}O$), which are expected to have Curie temperature. Full-potential Linearized Augmented Plane Wave(FLAPW) metod is adopted with exchange-correlation potential expressed as general gradient approximation(GGA). The calculated magnetic moments of ($TM_{0.25}Zn_{0.75}O$) are 0.83, 3.03, 4.03, 3.48, 2.47, 1.56, 0.43, 0.75, 0.01 ${\mu}_B$ for TM = Ti, Cr, Mn, Fe, Co, Ni, Ru, Pd, Ag, respectively. The nearest neighbor O atom to the transition metal is calculated to have a significant magnetic moment of about 0.1${\mu}_B$, ?? 새 strong hybridization between O-p and TM-d bands. As the results, the systems may have larger magnetic moments in total, compared to the corresponding isolated atoms. The 3d TM doped systems exhibit the half-metallic character except Co, wheres the 4d TM doped systems behave like normal metals and low spin polarization at the Fermi levels.

• Journal of Technologic Dentistry
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• v.20 no.1
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• pp.37-49
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• 1998

The specimens used were Ag-25 Pd-15 Cu ternary alloy and Au addition alloy. These alloys were melted and casted by induction electric furnace and centrifugal casting machine in Ar atmosphere. These specimens were solution treated for 2hr at $800^{\circ}C$ and were then quenched into iced water, and aged at $350{\sim}550^{\circ}C$ Age- hardening characteristics of the small Au-containing Ag-Pd-Cu dental alloys were investigated by means of hardness testing. X-ray diffraction and electron microscope observations, electrical resistance, ergy dispersed spectra and electron probe microanalysis. Principal results are as follows : Hardening occured in two stages, i.e., stage I in low temperature and stage II in high temperature regions, during continuous aging. The case of hardening in stage I was due to the formation of the $L1_0$ type face-centered tetragonal PdCu-ordered phase in the grain interior and hardening in stage I was affected by the Cu concentration. In stage II, decomposition of the ${\alpha}$ solid solution to a PdCu ordered phase($L1_0$ type) and an Ag-rich ${\alpha}2$ phase occurred and a discontinuous precipitation occurred at the grain boundary. From the electron microscope study, it was conclued that the cause of age-hardening in this alloy is the precipitation of the PdCu ordered phase, which has AuCu I type face-centered tetragonal structure. Precipetation procedure was ${\alpha}{\to}{\alpha}+{\alpha}_2+PdCu {\to}{\alpha}_1+{\alpha}_2+PdCu$ at Pd/Cu = 1.7 Ag-Pd-Cu alloy is more effective dental alloy as ageing treatment and is suitable to isothermal ageing at $450^{\circ}C$.

• Journal of Surface Science and Engineering
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• v.50 no.3
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• pp.170-176
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• 2017

EPIG (Electroless Pd/immersion Au) process was studied to replace ENIG (electroless Ni/immersion Au) and ENEPIG (electroless Ni/electroless Pd/immersion Au) processes for bump surface treatment used in high reliable flip chip packages. The palladium and gold layers formed by EPIG process were uniform with thickness of 125 nm and 34.5 nm, respectively. EPAG (Electroless Pd/autocatalytic Au) also produced even layers of palladium and gold with the thickness of 115 nm and 100 nm. TEM results exhibited that the gold layer in EPIG surface had crystalline structure while the palladium layer was amorphous one. After annealing at 250 nm, XPS analysis indicated that the palladium layer with thickness more than 22~33 nm could act as a diffusion barrier of copper interconnects. As a result of comparing the chip shear strength obtained from ENIG and EPIG surfaces, it was confirmed that the bonding strength was similar each other as 12.337 kg and 12.330 kg, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.3
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• pp.141-145
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• 2018

Ni-InGaAs shows promise as a self-aligned S/D (source/drain) alloy for n-InGaAs MOSFETs (metal-oxide-semiconductor field-effect transistors). However, limited thermal stability and instability of the microstructural morphology of Ni-InGaAs could limit the device performance. The in situ deposition of a Pd interlayer beneath the Ni layer was proposed as a strategy to improve the thermal stability of Ni-InGaAs. The Ni-InGaAs alloy layer prepared with the Pd interlayer showed better surface roughness and thermal stability after furnace annealing at $570^{\circ}C$ for 30 min, while the Ni-InGaAs without the Pd interlayer showed degradation above $500^{\circ}C$. The Pd/Ni/TiN structure offers a promising route to thermally immune Ni-InGaAs with applications in future n-InGaAs MOSFET technologies.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.19 no.1
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• pp.20-30
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• 1993

Liquid Chromatographic behavior of Pd(II) in Isonitosoethylacetoacetate imine IEAA-NR: R=H, CH3, C2H5, n-C3H7, n-C4H9, C6H5-CH2) Chelates were investigated by reversed phase high performance 1iquid chromatography on Micropak MCH-5 Column using Methanol /water as mobile phase. The optimum condition for the separation of Pd-Isonitrosoethylacetoacetate imine chelates were examined with respect to the flow rate, mobile phase strength. It was found that Pd(IEAA-NR)2 chelates were eluted in an acceptable range of the capacity factor value (0 $\leq$ log k' $\leq$ 1), The dependence of the logarithm of capacity factor(k') on the volume fraction of water in mixture with in the binary mobile phase was examined. Also, the dependence of k'on the liquid-liquid extraction distribution constant in methanol-water / n-alkane extraction system was on system was invert tigated for Pd(IEAA-NR)2. Both kinds of dependence are linear, which suggests that the retention of the electroneutral metal chelates be largely due to the solvophobic effect.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.5
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• pp.61-66
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• 1997

In this paper we report the fabrication of an InGaAs metal-semiconductor-metal (MSM) photodiode(PD) which an InAlAs barrier enhancement layer that has very low dark current and high speed chracteristics. The detector using Cr/Au schottky metal fingers with 4um spacing on a large active area of 300*300um$^{2}$ offers a low dark current of 38nA at 10V, a low capacitance of 0.8pF, and a high 3-dB bandwidth of 2.4 GHz. To our knowledge, these characteristics are better than any previously published results obtained from large area InGaAs MSM PD's. The RC equivalent model and frequency domain current response model considering transit time were also used to analyze the frequency characteristic of the fabricated device.

• Journal of Sensor Science and Technology
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• v.29 no.6
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• pp.388-393
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• 2020

In this study, a PbS quantum dots (QDs)-based H₂ gas sensor with a Pd electrode was proposed. QDs have a size of several nanometers, and they can exhibit a high surface area when forming a thin film. In particular, the NH₂ present in the ligand of PbS QDs and H₂ gas are combined to form NH₃⁺, subsequently the electrical characteristics of the QDs change. In addition to the resistance change owing to the reaction between Pd and H₂ gas, the resistance change owing to the reaction between the NH₂ of PbS QDs and H₂ gas increases the current signal at the sensor output, which can produce a high output signal for the same concentration of H₂ gas. Using the XRD and absorbance properties, the synthesis and particle size of the synthesized PbS QDs were analyzed. Using PbS QDs, the sensitivity was significantly improved by 44%. In addition, the proposed H₂ gas sensor has high selectivity because it has low reactivity with heterogeneous gases such as C₂H₂, CO₂, and CH₄.