• Journal of Navigation and Port Research
• /
• v.33 no.3
• /
• pp.193-197
• /
• 2009

In this paper, the EM wave absorber was designed and fabricated for improvement of Wireless LAN environment at 2.4 GHz. We fabricated several samples in different composition ratios of Sendust and CPE(Chlorinated Polyethylene). Absorption abilities were simulated in accordance with different thicknesses of the prepared absorbers and changed complex relative permittivity and permeability due to composition ratio. The mixing ratio of Sendust and CPE was searched as 80: 20 wt.% by experiments and simulation Then the EM wave absorber was fabricated and tested using the simulated data. As a result, the EM wave absorber was fabricated based on simulated data. Simulated and measured results agreed well. As a result, the developed EM wave absorber with thickness of 3.25 mm has absorption ability of 19 dB at 2.4 GHz.

• Transactions of Materials Processing
• /
• v.28 no.3
• /
• pp.159-166
• /
• 2019

Electromagnetic forming (EMF) simulations consider 3-dimensionally coupled electromagnetic-mechanical phenomenon using LS-DYNA, therefore the calculation cost is normally expensive. In this study, a sensitivity analysis in regard to the simulation variables affecting the calculation time was carried out. The EMF experiments were conducted to form an elliptically protruding shape on a high-strength steel sheet, and it was predicted using LS-DYNA simulation. In this particular EMF simulation case, the effect of several simulation variables, viz., element size, contact condition, EM-time step interval, and re-calculation number of the EM matrices, on the shape of elliptical protrusion and the total calculation time was analyzed. As a result, reasonable values of the simulation variables between the simulation precision and calculation time were proposed, and the EMF experiments with respect to the charging voltages were successfully predicted.

• Journal of Navigation and Port Research
• /
• v.34 no.3
• /
• pp.161-166
• /
• 2010

The bandwidth of detecting radars used for military purpose is increasingly broadened, and recently, the frequency band of the detecting radars is expanding to millimeterwave bands of the millimeterwave bands of 35 GHz and 94 GHz. Since, especially, it is essential and important to fabricate and develop EM wave absorber with the absorption ability more than 10 dB in 94 GHz band, the EM wave absorber was manufactured based on the design method by FDTD simulation. As a result, the developed EM wave absorber with the composition ratio of Binder(CPE with additional materials) : Carbon = 70 : 30 wt.% has the thickness of 0.7 mm and the absorption ability more than 14 dB in the frequency range of 94 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.27 no.8
• /
• pp.701-708
• /
• 2016

A new design for an ultra-wideband microstrip-to-FGCPW(Finite Ground Coplanar Waveguide) transition is presented. The proposed transition provides the electric field and impedance matching between adjacent transmission lines by ground shaping. The transition is designed on the analytical expressions of whole transitional structure. Conformal mapping is applied to obtain the characteristic impedance of FGCPW with bottom aperture within 3.3 % accuracy as compared with the EM-simulation results. As design example, the fabricated transition in back-to-back configuration provides insertion loss less than 1 dB per transition and return loss better than 10 dB for frequencies from 9 GHz to over 40 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.24 no.11
• /
• pp.1081-1090
• /
• 2013

In this paper, a C-band 10 W power amplifier with internally matched input and output matching circuit is designed and fabricated. The used power transistor for the power amplifier is GaAs pHEMT bare-chip. The wire bonding analysis considering the size of the capacitor and the position of transistor pad improves the accurate design. The matching circuit design with the package effect using EM simulation is performed. To reduce the unsymmetry of IMD3 in 2-tone measurement due to the memory effect, the bias circuit minimizing the memory effect is proposed and employed. The measured $P_{1dB}$, power gain, and power added efficiency are 39.8~40.4 dBm, 9.7~10.4 dB, and 33.4~38.0 %, respectively. Adopting the proposed bias circuit, the difference between the upper and lower IMD3 is less than 0.76 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.26 no.3
• /
• pp.268-275
• /
• 2015

A clear and efficient design method for ultra-wideband microstrip-to-coplanar stripline(CPS) transition, which is based on the analytical expressions of the whole transitional structure, is presented. The conformal mapping is applied to obtain the characteristic impedance of the transitional structure within 3.2 % accuracy as compared with the EM-simulation results. The transition is designed to provide broadband impedance matching using Klopfenstein taper. The implemented transition performs less than 1 dB insertion loss per transition for frequencies from 5.39~40 GHz.

• Journal of The Institute of Information and Telecommunication Facilities Engineering
• /
• v.8 no.1
• /
• pp.1-5
• /
• 2009

In this paper, we propose a method that applies Vector Fitting (VF) technique to the equivalent circuit model for RF passive components. These days wireless communication system is getting smaller and smaller. So EMI/EMC is an issue in RF. We can solve PI/SI (Power Integrity/Signal Integrity) that one of EMI/EMC problem apply IFFT for 3D EM simulation multiple with input signal. That is time consuming task. Therefore equivalent circuit model using RF passive component is important. VF schemes are implemented to obtain the rational functions. S parameters of the equivalent circuit model is compared to those of EM simulation in case of the microstrip line structure.

• 한국정보통신설비학회:학술대회논문집
• /
• 2009.08a
• /
• pp.281-284
• /
• 2009

In this paper, we propose a method that applies Adaptive Frequency Sampling(AFS) technique to the equivalent circuit model for RF passive components. Thes days wireless communication system is getting smaller and smaller. So EMI/EMC is an issue in RF. We can solve PI(Power Integrity)/SI(Signal Integrity) that one of EMI/EMC problem apply IFFT for 3D EM simulation multiple with input signal. That is time comuming task. Therefore equivalent circuit model using RF passive component is important. AFS schemes are implemented to obtain the rational functions. S parameters of the equivalent circuit moldel is compared to those of EM simulation in case of the microstrip line structure.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2003.11a
• /
• pp.256-259
• /
• 2003

In this paper, a design of multi-layered BPF(bandpass filter) using LTCC(Low Temperature Co-fired Ceramic) process by a lumped-elements is proposed for SOP(system-on-a-chip) of wireless communication systems. The proposed BPF improved a characteristic of rejection band to build an attenuation pole caused by structurally adjacent co-inductance and coupling. The simulation data shows a bandwidth of 90MHz from a center frequency of 2.4GHz, a return loss of 27dB, an insertion loss of 3.2dB, and an attenuation of at least 20dBc at $f_0{\pm}250MHz$. Simulations have used serenade circuit simulation and HFSS EM simulation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.22 no.2
• /
• pp.162-172
• /
• 2011

In this paper, a design and fabrication of 4 W power amplifier for the WiMAX frequency band(2.3~2.7 GHz) are presented. The adopted active device is a commercially available GaN HEMT chip of Triquint Company, which is recently released. The optimum input and output impedances are extracted for power amplifier design using a specially self-designed tuning jig. Using the adopted impedances value, class-F power amplifier was designed based on EM simulation. For integration and matching in the small package module, spiral inductors and interdigital capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 50 % and harmonic suppression above 40 dBc for second(2nd) and third(3rd) harmonic at the output power of 36 dBm.