• Title/Summary/Keyword: 3D Beam

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Surface and Percentage Depth Doses for Multileaf Collimator Conjunction with Conventional Block (다엽 콜리메이터와 제작차폐물의 동시 사용시 표면선량 변화)

  • 양광모;서현숙
    • Progress in Medical Physics
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    • v.13 no.2
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    • pp.62-68
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    • 2002
  • A muiltileaf collimator (MLC) is used as a replacement for conventional blocks. The MLC, however may not be appropriate for a fine field shaping. For the fine field shaping, conventional block can be added under the MLC. But it may significantly affect on the dosimetric characteristics such as surface dose of skin, buildup region and percent depth doses. We performed the study to evaluate the surface dose and the maximum depth dose using MLC conjunction with conventional blocks for various field sizes and energies. We confirmed the surface dose was increased by using the additional conventional block under the MLC ranging from 10 to 35.6% according to various field sizes and radiation beam energies. The surface dose was effectively reduced by application of 2 or 3 m thickness of lead plate as electron filter.

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Flexibility Improvement of InGaZnO Thin Film Transistors Using Organic/inorganic Hybrid Gate Dielectrics

  • Hwang, B.U.;Kim, D.I.;Jeon, H.S.;Lee, H.J.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.341-341
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    • 2012
  • Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

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Evaluation of Flexible Complementary Inverters Based on Pentacene and IGZO Thin Film Transistors

  • Kim, D.I.;Hwang, B.U.;Jeon, H.S.;Bae, B.S.;Lee, H.J.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.154-154
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    • 2012
  • Flexible complementary inverters based on thin-film transistors (TFTs) are important because they have low power consumption and high voltage gain compared to single type circuits. We have manufactured flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The circuits were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. The characteristics of TFTs and inverters were evaluated at different bending radii. The applied strain led to change in voltage transfer characteristics of complementary inverters as well as source-drain saturation current, field effect mobility and threshold voltage of TFTs. The switching threshold voltage of fabricated inverters was decreased with increasing bending radius, which is related to change in parameters of TFTs. Throughout the bending experiments, relationship between circuit performance and TFT characteristics under mechanical deformation could be elucidated.

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Planar Square-spiral Antenna using a strip conductor (도체스트립을 이용한 평판사각 스파이럴 안테나)

  • Yang, Doo-Yeong;Lee, Min-Soo
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.13 no.5
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    • pp.2325-2331
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    • 2012
  • Planar square-spiral antenna using a strip conductor is proposed and analyzed for RFID system in UHF band operating from 860MHz to 960MHz. By varying the length of common line, detached distance, strip line-space, strip line-width and the number of spiral turn, the optimized antenna are designed and fabricated in compact size without a matching-stub between the input port of the proposed antenna and RFID tag chip. From the optimized results, the frequency bandwidth in VSWR<2 has covered 100MHz in the RFID UHF band. The antenna gain has obtained 3.5dBi at the center frequency of 910MHz and the desired beam pattern has shown directional pattern on elevation and azimuth angle. Therefore, the proposed antenna is suitable for practical RFID applications requiring various tag chips with the specific input impedance.

Over-Strength of Low-Rise RC Frame in Low Seismic Zone (약지진동 지역의 저층 RC 골조의 초과강도)

  • 이영욱
    • Journal of the Earthquake Engineering Society of Korea
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    • v.3 no.2
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    • pp.9-18
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    • 1999
  • The seismic over-strength factor Ω is evaluated for 4-story reinforced concrete buildings in Korea, which has low seismic intensity. For this study, the seismic load suggested in' Aseismic guideline research- phase ll' (in Korea) is used. When 3D study-models are designed, span length and bay number are varied and accidental torsional moment is considered. And the models are analyzed by push-over analysis, in which external and internal frame are connected by rigid-link. As a result of numerical experiments, Ω is increased as the bay number or span length is increased. Because, by the including of accidental torsional moment in designing process, the increased ratio of strength of external columns is larger than the increased ratio of span length or bay number. And this makes the failure mode of model closer or strong-column and weak-beam mechanism.

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A Development of Whipping Analysis Program for Ship Hulls (선체 휘핑 해석 전용 프로그램의 개발)

  • Seong-Whan Park;Jai-Kyung Lee;Sang-Heon Oh;Myung-Jae Song;Seung-Min Kwon
    • Journal of the Society of Naval Architects of Korea
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    • v.39 no.3
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    • pp.64-74
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    • 2002
  • A special purposed program for ship hull strength analysis considering whipping phenomena is developed. In this program, the non-linear hydrodynamic impact force is considered using the momentum slamming theory and the hull girder is modeled as elastic body on the base of Timoshenko's beam theory. The numerical verifications are conducted in the view points that the effect of slamming impact force, the effect of hydro-elastic formulation, and the effect of various design parameters such as ship speed, wave amplitude, wave length and others. By the application of a real ship design process, the availability of the program is proved. This program has a GUI function for many I/O data process as well as the function to show the 2-D ship motion in the graphic window, and has other available functions for the whipping analysis.

Area storage density of ideal 3-D holographic disk memories (이상적인 디스크형 3차원 홀로그래픽 메모리에서의 면적 저장밀도)

  • 장주석;신동학
    • Korean Journal of Optics and Photonics
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    • v.11 no.1
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    • pp.58-64
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    • 2000
  • Assuming that the performance of holographic storage media is ideal, we estimate the area storage density of disk-type holographic memories, when the method of either angle multiplexing, or rotational multiplexing, or both are used. The area storage density is strongly dependent on the f numbers (ratio of focal length to diameter) of both the Fourier transform lens in the signal arm, denoted by $F/#_2$, and the angle range over which the reference beam is incident (or, the equivalent f number corresponding to the angle range denoted by $F/#_1$). The area storage density is largely independent of the pixel pitch of the spatial light modulator when the Fourier plane holograms are recorded, while it is sensitive to the pixel pitch when the image plane holograms are recorded. In general, to obtain high area storage density, the Fourier or at least near Fourier plane holograms rather than the image plane holograms should be recorded. In addition, when the thickness of the recording materials are less than approximately $500\mu\extrm{m}$, rotational multiplexing gives higher area storage densities than angle multiplexing does. To increase the storage density further, however, it is desirable to use both of the two multiplexing methods in combination.nation.

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Buckling Formation on Steel-Based Solar Cell Induced by Silicone Resin Coat and Its Improvement on Performance Efficiency (실리콘 고분자 수지의 버클링을 통한 스틸기반 태양전지의 효율 향상)

  • Park, Young Jun;Oh, Kyeongseok
    • Korean Chemical Engineering Research
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    • v.57 no.4
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    • pp.519-524
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    • 2019
  • Even though stainless steel foil is not a highly efficient material for film-type solar cell, it has strong passivation capability without additional process. In this study, silicone resin was employed during a-Si:H thin film solar cell fabrication for the purpose of planarization and electrical insulation. In the first stage of process, silicone resin was coat onto the stainless steel (STS) using spin coater with thickness of $2{\sim}3{\mu}m$ and followed by aluminum deposition using ion beam application. Unexpectedly buckling was formed during aluminum deposition process. After subsequent fabrication processes, solar cell performance was evaluated. In voltage-current data, slight increase of cell performance was obtained and interpreted by the increase of light scattering.

Strengthening of prestressed girder-deck system with partially debonding strand by the use of CFRP or steel plates: Analytical investigation

  • Haoran Ni;Riliang Li;Riyad S. Aboutaha
    • Computers and Concrete
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    • v.31 no.4
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    • pp.349-358
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    • 2023
  • This paper describes an in-depth analysis on flexural strength of a girder-deck system experiencing a strand debonding damage with various strengthening systems, based on finite element software ABAQUS. A detailed finite element analysis (FEA) model was developed and verified against the relevant experimental data performed by other researchers. The proposed analytical model showed a good agreement with experimental data. Based on the verified FE model, over a hundred girder-deck systems were investigated with the consideration of following variables: 1) debonding level, 2) span-to-depth ratio (L/d), 3) strengthening type, 4) strengthening material thickness. Based on the data above, a new detailed analytical model was developed and proposed for estimating residual flexural strength of the strand-debonding damaged girder-deck system with strengthening systems. It was demonstrated that both finite element model and analysis model could be used to predict flexural behaviors for debonding damaged prestressed girder-deck systems. Since the strands are debonding from surrounding concrete over a certain zone over the length of the beam, the increase of strain in strands can be linked with a ratio ψ, which is Lp/c. The analytical model was proposed and developed regarding the ratio ψ. By conducting procedure of calculating ψ, the ψ value varies from 9.3 to 70.1. Multiple nonlinear regression analysis was performed in Software IBM SPSS Statistics 27.0.1 to derive equation of ψ. ψ equation was curved to be an exponential function, and the independent variable (X) is a linear function in terms of three variables of debonding level (λ), span length (L), and amount of strengthening material (As). The coefficient of determinate (R2) for curve fitting in nonlinear regression analysis is 0.8768. The developed analytical model was compared to the ultimate capacities computed by FEA model.

Analysis on the Dosimetric Characteristics of Tangential Breast Intensity Modulated Radiotherapy (유방암의 접선 세기조절 방사선치료 선량 특성 분석)

  • Yoon, Mee Sun;Kim, Yong-Hyeob;Jeong, Jae-Uk;Nam, Taek-Keun;Ahn, Sung-Ja;Chung, Wong-Ki;Song, Ju-Young
    • Progress in Medical Physics
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    • v.23 no.4
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    • pp.219-228
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    • 2012
  • The tangential breast intensity modulated radiotherapy (T-B IMRT) technique, which uses the same tangential fields as conventional 3-dimensional conformal radiotherapy (3D-CRT) plans with physical wedges, was analyzed in terms of the calculated dose distribution feature and dosimetric accuracy of beam delivery during treatment. T-B IMRT plans were prepared for 15 patients with breast cancer who were already treated with conventional 3D-CRT. The homogeneity of the dose distribution to the target volume was improved, and the dose delivered to the normal tissues and critical organs was reduced compared with that in 3D-CRT plans. Quality assurance (QA) plans with the appropriate phantoms were used to analyze the dosimetric accuracy of T-B IMRT. An ionization chamber placed at the hole of an acrylic cylindrical phantom was used for the point dose measurement, and the mean error from the calculated dose was $0.7{\pm}1.4%$. The accuracy of the dose distribution was verified with a 2D diode detector array, and the mean pass rate calculated from the gamma evaluation was $97.3{\pm}2.9%$. We confirmed the advantages of a T-B IMRT in the dose distribution and verified the dosimetric accuracy from the QA performance which should still be regarded as an important process even in the simple technique as T-B IMRT in order to maintain a good quality.