• Journal of the Korea Society for Simulation
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• v.15 no.2
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• pp.51-57
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• 2006

Production environment of semiconductor industry is shifting from 200mm wafer process to 300mm wafer process. In the new era of semiconductor industry, FAB (fabrication) Line Automation is a key issue that semiconductor industry is facing in shifting from 200mm wafer fabrication to 300mm wafer fabrication. In addition, since the semiconductor manufacturing technologies are being widely spread and market competitions are being stiffened, cost-down techniques became basis of growth. Most companies are trying to reduce average cycle time to increase productivity and delivery time. In this paper, we simulated 300mm wafer fabrication semiconductor manufacturing process by laying great emphasis on reduce average cycle time.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.6
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• pp.148-155
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• 2008

This study presents a process control of the wafer edge exposure (WEE) used in 300[mm] wafer environment. WEE, as a key module of the overall track system (coater and developer) for making patterns on wafer, is a system to expose the UV-ray on the wafer to remove a photo resist around edge of the wafer. It can measure, memorize and control the distance and angles from wafer center to edge. Recently in the 300[mm] semiconductor fabrication, the track system strongly requires that WEE station has a controller with high throughput and accuracy to increase process efficiency. We have designed and developed the controller, and present here a WEE control algorithm and experimental results.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.17 no.2
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• pp.1-6
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• 2008

In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of large size silicon wafer. For further improvement of the ultra precision surface and flatness of Si wafer necessary to high density ULSI, it is known that polishing is very important. However, most of these investigation was experiment less than 300mm diameter. Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This study reports the machining variables that has major influence on the characteristic of wafer polishing. It was adapted to polishing pressure, machining speed, and the slurry mix ratio, the optimum condition is selected by ultra precision wafer polishing using load cell and infrared temperature sensor. The optimum machining condition is selected a result data that use a pressure and table speed data. By using optimum condition, it achieves a ultra precision mirror like surface.

• Journal of the Semiconductor & Display Technology
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• v.2 no.3
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• pp.31-36
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• 2003

On this study, an E.E(End-Effector) for the 300 mm wafer transfer robot system is newly suggested. It is a mechanical type with $180^{\circ}$ rotating ranges and is composed of 3-point arms, two plate springs and single-axis DC motor controlled by microchip. To design, relationship between the gripping force and the wafer deformation is analyzed by FEM. By analytic results, the gripping force for 300 mm wafer is confirmed as 255~274 gf. From experimental results on gripping force, repeatable position accuracy and gripping cycle times in a wafer cleaning system, we confirmed that the suggested E.E was well designed to satisfiy on the required performance for 300 mm wafer transfer robot system.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.152-152
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• 2014

최근 반도체의 고집적화로 high dose implant 도입과 소자의 동작 특성 향상을 위한 low-k 물질 도입에 따라 다양한 주변 공정의 변화를 이끌고 있다. 이에 따라 반도체 제조의 핵심 공정 단계 중 하나인 ashing 단계에서 기존 성능 이상의 장비를 기대하고 있으며, 그것을 평가하기 위한 중요 요소로 uniformity와 fast stripping이 있다. 본 연구에서는 유체해석 시뮬레이션을 통해 450 mm ashing 챔버에서의 gas inlet baffle과 wafer stage 사이의 최적 거리를 예측했다. 우선적으로 시뮬레이션의 신뢰도를 높이기 위해 실험으로 측정한 300 mm ashing 결과와 유체해석 결과 molecular flux의 상관관계를 파악하여, 450 mm ashing 챔버의 최적 구조를 예측하였다. 선행 연구한 300 mm 시뮬레이션 결과를 바탕으로 이상적인 450 mm ashing 챔버를 설계하였다. 유체해석 결과는 동일한 형태의 수직형 구조 장비에서 baffle과 wafer stage 사이의 거리가 35 mm에서 60 mm일 때, 450 mm wafer surface 위에서 더욱 균일한 density 분포를 나타내었다. Reactant flux 분포는 거리가 60 mm에서 80 mm 사이일 경우 더 균일하게 나타났다. 그러므로, 450 mm 챔버에서 gas inlet baffle과 wafer stage 간격이 60 mm일 때 최적의 구조로 판단된다.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.22 no.2
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• pp.310-317
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• 2013

In this paper, the contact pressure of the wafer and polishing pad for final polishing process for 300 mm-wafer were investigated through numerical analysis using FEM tool, ANSYS. The distribution of the contact pressure is one of main parameters which affects on the flatness and surface roughness of polished wafers. Two types of polishing head, a hard type head with ceramic disk and a soft type head with air bag were considered. The effects of the deformation and initial shape of table on the contact pressure were also examined. Both heads and tables were modeled as 3D finite element model from solid model, and the material properties of polishing pads and rubber plate for the air-bag head were obtained from tensile tests. The contact pressure deviation on wafer surface was smaller with air bag head than hard type head even when the table had form errors such as convex or concave. From this 3D analysis, it could be concluded that the air-bag head has better uniformity of the contact pressure on wafer. Also, the effects of inner diameter of air bag and radial clearance between wafer and retainer were investigated as view point of contact pressure concentration on the edge of wafer.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.6
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• pp.48-54
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• 2012

In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of large size silicon. However, for many companies, it is hard to produce 400mm or 450mm wafers, because of excesive funds for exchange the equipments. Therefore, it is necessary to investigate 300mm wafer to obtain a better efficiency and a good property rate. Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This research investigated the surface characteristics that apply variable machining conditions and Taguchi Method was used to obtain more flexible and optimal condition. In this study, the machining conditions have head speed, oscillation speed and polishing time. By using optimum condition, it achieves a ultra precision mirror like surface.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.88-93
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• 2023

As the demand for High Bandwidth Memory (HBM) increases and the handling capability of larger wafers expands, ensuring reliable Total Thickness Variation (TTV) measurement for stacked wafers becomes essential. This study presents the design of a measurement module capable of measuring TTV across the entire area of a 300mm wafer, along with estimating potential mechanical measurement errors. The module enables full-area measurement by utilizing a center chuck and lift pin for wafer support. Modal analysis verifies the structural stability of the module, confirming that both the driving and measuring parts were designed with stiffness exceeding 100 Hz. The mechanical measurement error of the designed module was estimated, resulting in a predicted measurement error of 1.34 nm when measuring the thickness of a bonding wafer with a thickness of 1,500 ㎛.

• 제어로봇시스템학회:학술대회논문집
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• 2002.10a
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• pp.56.1-56
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• 2002

$\textbullet$ Introduction $\textbullet$ Constitution and equipment of AMHS $\textbullet$ Discussion about Using Stocker $\textbullet$ Ahead developed 300mm stockers $\textbullet$ 300mm Stocker Solution-Modular Stocker $\textbullet$ Conclusion

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.155-155
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• 2011

Dual coil을 사용하는 상용 AMAT DPS II 300 mm Centura 장비의 antenna의 전류비를 조절하여 $SiO_2$의 식각 균일도를 평가하였다. Inner turn과 outer turn의 흐르는 전류비를 분배 capacitor로 조절하여 16.9 %의 이온 전류 밀도 분포를 확인하였고, 투입 전력에 따라 200 W에서 12 %, 800 W에서 9 %로 점차 감소하는 경향을 확인하였다. 이때 300 mm wafer의 반지름 방향으로의 식각 균일도는 3 %로 측정되었고, FRC (flow ratio control)는 0.5에서 가장 균일한 결과를 얻었다.