• 한국자기학회지
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• 제4권2호
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• pp.126-129
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• 1994

희토류원소 Pr의 첨가가 Fe-B계 비정질합금의 자왜에 미치는 영향을 조사하기 위하여 비정질 $Fe_{86-x}B_{14}Pr_{x}(2{\leq}x{\leq}8\;at.%)$ 합금을 급속응고법을 이용하여 제조하였다. 급 속응고상태 비정질 $Fe_{86-x}B_{14}Pr_{x}$ 합금의 포화자왜는 Pr이 증가할 수록 증가하여 x=8에 서 약 50 ppm이 얻어졌다. 특히 $300^{\circ}C$에서 2시간 열처리된 비정질 $Fe_{84}B_{14}Pr_{2}$ 합금의 포화자왜는 70 ppm으로 증가하였다. $300^{\circ}C$에서 2시간 열처리된 비정질 $Fe_{84}B_{14}Pr_{2}$ 합금의 교류 자기이력손실 및 교류투자율$(f=50\;kHz,\;B_{m}=0.1\;T)$은 각각 15 W/kg, $5.5{\times}10^{3}$이었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 방전 플라즈마 유기절연재료 초전도 자성체연구회
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• pp.19-22
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• 2004

The resonant planar transformer, which had power capacity of 300 W, input voltage of 220 V, output voltage of 15 V, and switching frequency of 500 kHz, was designed and manufactured by using the planar core with large effective area and the flat copper lead frames for miniaturization and high efficiency of the switching mode power supply (SMPS). As well as, a resonant converter equipped with the above mentioned planar transformer was manufactured and electromagnetic characteristics were investigated. The numerical value of turns for 1st and 2nd winding were 12 and 2 respectively. The self inductance of 1st winding was 33.2 ${\mu}H$, very low leakage inductance of 1.27 ${\mu}H$, and the coupling factor of 0.98 were obtained at switching frequency of 300 kHz. The high efficiency of 88.21 % for the SMPS equipped with planar transformer was obtained at power capacity of 300 W.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.904-905
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• 2008

In this paper, a novel 60kV, 300A, 3kHz pulsed power supply based on IGBT stacks is proposed. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and 15kW series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 830VDC, 300A pulses. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is important of series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2012년도 전력전자학술대회 논문집
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• pp.122-123
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• 2012

본 논문에서는 300kW급 EBOP(Electrical Balance of Plant)의 개발에 관한 내용을 설명하고 있다. EBOP는 연료전지 출력인 DC 전원을 전력변환기술을 이용하여 AC전원으로 변환하는 인버터 시스템이다. 포스코에너지에서는 300kW급 EBOP 시스템을 국제 규격에 준하는 시험을 통해 개발 완료하였고 실증단지에 적용하여 성능 검증을 하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.702-702
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• 2013

태양전지에서 SiNX층은 반사방지막 역할과 태양전지 소자 보호 역할 2가지를 동시에 하고 있다. 태양전지에서 반사방지막은 굴절률 1.97, 두께 76 nm가 이론적으로 최적의 상태이다. PECVD장비를 이용하여 SiNx 층을 증착하였다. SiNX층 증착 시에 RF 파워와 혼합 가스를 변화한 후 굴절률을 측정하였다. RF 파워는 100~400 W로 변화시켰고 혼합가스 변화는 SiH4가스와 N2, H2, N2+H2 가스 각각을 같이 넣어 주면서 증착하였다. SiNX 가스 자체에 N2가 80%섞여 있는 가스를 사용하기 때문에 SiH4 가스자체 만으로도 SiNx층을 형성 할 수 있다. RF파워 300 W, SiH4 50 sccm, 기판 온도 $300^{\circ}C$, 공정시간 63초에서 굴절률 1.965, 두께 76 nm를 갖는 SiNx층을 형성 할 수 있었고 개방전압: 0.616 V, 전류밀도: 37.78 mA/$cm^2$, 충실도:76.59%, 효율: 17.82%로 가장 높은 효율을 얻을 수 있었다.

• 대한의용생체공학회:의공학회지
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• 제14권1호
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• pp.17-22
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• 1993

Radiation-induced fibrosarcoma tumors were grown on the flanks of C3H mice. The mice were divided intro two groups. One group was injected with Photofrin II, intravenously (2.5mg/kg body weights). The other group received no Photofrin E Mice from both groups were irradiated for approximately 15 minutes at 100,300, or $500{\;}mW/\textrm{cm}^2$ with the argon (488nm/514.5 nm), dye(628nm) and gold vapor (pulsed 628 nm) laser light. A photosensitizer behaved as an added absorber. Under our experimental conditions, the presence of Photofrin II increased surface temperature by at least 40% and the temperature rise due to $300{\;}mW/\textrm{cm}^2$ irradiation exceeded values for hyperthermia. Lights and temperature distributions with depth were estimated by a computer model. The model demonstrated the influence of wavelength on the thermal process and proved to be a valuable tool to investigate internal temperature rise.

• 한국음향학회지
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• 제18권4호
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• pp.3-10
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• 1999

'음향열 기울기 온도 측정장치'[1]를 길이 68cm인 직관 내에서 위치를 변화시키면서 음파의 열수송 온도차를 조사하였다. 확성기 구동 전력을 50W로 고정하고 주파수를 150Hz에서 300Hz까지 10Hz 간격으로 변화시키면서 실험하여 이론값과 비교하였다. 수치 시뮬레이션을 통해 Q-값에 따른 열음향 냉동 온도차의 주파수-위치 분포를 살펴보았다. 이 분포를 이용하여 최적 구동 주파수와 열음향 교환기의 최적 위치를 결정할 수 있다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.351-354
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• 1998

In this paper, electrical characteristics of an n-channel Si MOSFET with L$_{s}$=0.6.mu.m under optical illumination are charaterized on wafer. Energetic photons with .gamma.=830nm, hv=1.494eV, P$_{opt}$=300mW are injected near the drain junction, the most photoresponsive region in the device, via optical fiber. We observed significantly increased drain current and transconductance, which is considered to be useful for the implementation of OEICs on silicon substrate, under optical control with P$_{opt}$=300mW. Optical power-dependent physical mechanisms responsible for the variation of electrical characteristics under optical input are also reported.d.d.d.

• 한국정밀공학회지
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• 제7권4호
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• pp.29-39
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• 1990

The purpose of this research is to analyze the impact behaviors of laminated composite plates subjected to the transverse low-velocity impact by the steel ball. A plate finite element model based on Whitney and Pagano's the first-order shear deformation theory (FSDT) in conjunction with experimental static contact laws is formulated and then compared with the results of the impact experiments. Because the input data and the output data printed at every integration time step are lots of amount, these are interactively poecessed by the developed pre-processor(PREPLOT) and postprecessor(POSTPLOT). All results from these procesors are automatically generated by CALCOMP plotter. Test materials are glass/expoxy composite materials. The specimens are composed of [$0^{\circ} /45^{\circ}/0^{\circ}/-45^{\circ}/0^{\circ}/]2s\ and \[90^{\circ}/45^{\circ}/90^{\circ}/-45^{\circ}/90^{\circ}/$]2s stacking sequences and have $4.5^t{\times}200^w{\times}200^l$(mm) and $4.5^t{\times}300^w{\times}300^l$(mm) dimensions.

• 한국세라믹학회지
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• 제50권3호
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• pp.212-217
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• 2013

Ultra hard TiN coatings were fabricated by DC and ICP (inductively coupled plasma) magnetron sputtering techniques. The effects of ICP power, ranging from 0 to 300 W, on the coating microstructure, crystallographic, and mechanical properties were systematically investigated with FE-SEM, AFM, HR-XRD and nanoindentation. The results show that ICP power has a significant influence on the coating microstructure and mechanical properties of TiN coatings. With an increasing ICP power, the film microstructure evolves from an apparent columnar structure to a highly dense one. Grain sizes of TiN coatings decreased from 12.6 nm to 8.7 nm with an increase of the ICP power. A maximum nanohardness of 67.6 GPa was obtained for the coatings deposited at an ICP power of 300 W. The crystal structure and preferred orientation in the TiN coatings also varied with the ICP power, exerting an effective influence on film nanohardness.