Abstract
In this paper, electrical characteristics of an n-channel Si MOSFET with L$_{s}$=0.6.mu.m under optical illumination are charaterized on wafer. Energetic photons with .gamma.=830nm, hv=1.494eV, P$_{opt}$=300mW are injected near the drain junction, the most photoresponsive region in the device, via optical fiber. We observed significantly increased drain current and transconductance, which is considered to be useful for the implementation of OEICs on silicon substrate, under optical control with P$_{opt}$=300mW. Optical power-dependent physical mechanisms responsible for the variation of electrical characteristics under optical input are also reported.d.d.d.