• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.32 no.2
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• pp.111-115
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• 2022

Objectives: The purpose of this study is to verify whether droplet-induced propagation, the main route of infectious diseases such as COVID-19, can occur in semiconductor FAB (Fabrication), based on research results on general droplet propagation. Methods: Through data surveys droplet propagation was modeled through simulation and experimental case analysis according to general (without mask) and mask-wearing conditions, and the risk of droplet propagation was inferred by reflecting semiconductor FAB operation conditions (air current, air conditioning system, humidity, filter conditions). Results: Based on the results investigated to predict the possibility of spreading infectious diseases in semiconductor FAB, the total amount of droplet propagation (concentration), propagation distance, and virus life in FAB were inferred by reflecting the management parameter of semiconductor FAB. Conclusions: The total amount(concentration) of droplet propagation in the semiconductor fab is most affected by the presence or absence of wearing a mask and the line air dilution rate has some influence. when worn it spreads within 0.35~1m, and since the humidity is constant the virus can survive in the air for up to 3 hours. as a result the semiconductor fab is judged to be and effective space to block virus propagation due to the special environmental condition of a clean room.

• The korean journal of orthodontics
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• v.27 no.1
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• pp.1-20
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• 1997

Skeletal Class III malocclusions are growth-related discrepancies, and the problems are more severe until growth is complete. Causes of skeletal Class III malocclusion are classified into mandibular overgrowth, maxillary deficiency, and combination of the two. Face mask has been recommended for treatment of Class III malocclusion with maxillary deficiency in the early time of growth. Numerous experiments were performed and clinical studies have been reported on face mask ; nevertheless, studies on profile changes and stability after treatment of face mask are considered to be somewhat insufficient. The author selected 50 patients who can be checked for follow-up. They had been diagnosed as skeletal Class III malocclusion with maxillary deficiency and then treated with face mask ; the sample group was divided according to sex, treatment beginning age, palatal suture opening (intraoral appliance). For each group, changing pattern of facial profile and stability of treatment observed, and comparison with 20 Korean normal children(Angle's Class I). The following results were obtained. 1. skeletal, dental, and soft tissue measurements indicated more changes in the amounts of maxillary forward movement during face mask treatment. 2. R.P.E. group showed more significant maxillofacial changes and La-Li group showed more dental changes. 3. Growth changes of maxilla induced in the treatment group during wearing face mask were much more than those of normal group. 4. Growth changes of maxilla in the treatment group after treatment of face mask were less than those of normal group. From the obtained aata, it can be concluded that there was a stimulative effect on forward growth of maxilla during the use of face mask ; however, on removal of face mask, the stimulative effect was eliminated and undergrowth tendency of maxilla resumed.

• Sleep Medicine and Psychophysiology
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• v.28 no.1
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• pp.27-33
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• 2021

Objectives: The purpose of this study is to investigate the difference in the effects of eye-mask and light-off on sleep status according to a commercial fitness tracker and a sleep diary of psychiatric in-patients in correctional facilities where nocturnal light is compulsory. Methods: This study was conducted over 3 consecutive nights. In-patients of the National Forensic Psychiatric Hospital (n = 29) were assigned random subject numbers and slept as usual in the light-on condition on the first night. The subjects slept with eye-masks in the light-on condition on another night and without an eye-mask in the light-off condition on the other night. Subjects were asked to sleep wearing a commercial fitness tracker and to keep a sleep diary. The order of these changes in bedroom lighting condition on the second and third nights was assigned randomly to participants. Results: In comparison of the sleep variables between the light-on condition and the eye-mask condition, the Wakefullness After Sleep Onset (WASO) was shorter and sleep satisfaction was higher in the latter.(respectively, Z = 3.66, p < 0.017 ; Z = 2.69, p < 0.017) In comparison of the sleep variables between the light-on and light-off conditions, the WASO was shorter and sleep efficiency and sleep satisfaction were higher in the latter (respectively, Z = 2.40, p < 0.017 ; Z = 3.02, p < 0.017 ; Z = 3.88, p < 0.017). However, there were no differences in the sleep variables between the eye-mask condition and the light-off condition. Conclusion: Subjective improvements in sleep variables were noted in sleep diaries of institutionalized psychiatric patients under either the 'eye-mask' or 'light-off' condition. However, there were no significant differences between the 'eye-mask' and 'light-off' conditions. Therefore, we suggest that psychiatric patients in correctional facilities use eye-masks when sleeping.

• Journal of the Korean Applied Science and Technology
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• v.35 no.1
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• pp.62-69
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• 2018

In order to utilize health food chick bean as a raw material for cosmetics, the skin improvement effect of a mask pack made of chickpea Natto fermented with Bacillus subtilis Natto strain was studied. Powder obtained by lyophilization of chickpea Natto was applied to a facial mask pack as a paste formulation. This Natto pack was applied to subjects in their 50s and 60s to investigate their effect on skin improvement. As the number of treatments of Natto pack increased, the skin was improved and the improvement effect was remarkable after 4 treatments. After four times treatments, moisture content and sebaceous secretion increased by $8.4{\pm}3.6%p$ and $4.0{\pm}2.3%p$, respectively. Skin pores and wrinkles were also decreased by $1.8{\pm}0.3%p$ and $1.8{\pm}0.9%p$, respectively. Skin pigmentation decreased by $1.3{\pm}0.2%p$ and skin tone also increased from 55.2% to 55.9%. These results indicate that Natto product obtained by fermenting chickpea has the effect of improving skin such as moisturizing, pore, wrinkle, pigmentation, sebum secretion and skin tone, and can be used as a raw material for various functional cosmetics.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1252-1255
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• 2002

In this paper, face recognition algorithm, by using skin color information of HSI color coordinate collected from face images, elliptical mask, fratures of face including eyes, nose and mouth, and geometrical feature vectors of face and facial angles, is proposed. The proposed algorithm improved face region extraction efficacy by using HSI information relatively similar to human's visual system along with color tone information about skin colors of face, elliptical mask and intensity information. Moreover, it improved face recognition efficacy with using feature information of eyes, nose and mouth, and Θ1(ACRED), Θ2(AMRED) and Θ 3(ANRED), which are geometrical face angles of face. In the proposed algorithm, it enables exact face reading by using color tone information, elliptical mask, brightness information and structural characteristic angle together, not like using only brightness information in existing algorithm. Moreover, it uses structural related value of characteristics and certain vectors together for the recognition method.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.770-772
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• 2002

A new dry-processing method of organic gate dielectric film in field-effect transistors (FETs) was proposed. The method use vapor deposition polymerization (VDP) that is continuous and low temperature process. It has the advantages of shadow mask patterning and dry processing in flexible low-cost large area applications. Here, 80 nm-thick Al as a gate electrode was evaporated through shadow mask. Gate insulators used two different polyimides. The one material was 4,4'-oxydiphtahlic anhydride (ODPA) and 4,4'-oxydianiline (ODA). Another was 2,2-bis(3,4-dicarboxyphenyl) Hexafluoropropane Dianhydride (6FDA) and 4,4' -oxydianiline (ODA). These were co-deposited by high-vaccum thermal-evapora and cured at 150 $^{\circ}C$ for 1 hour, respectively. Pentacene as a semiconductor and 100 nm-thick Au as a source and drain electrode were evaporated through shadow mask.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.55-60
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• 2020

The hard mask photo-resist strip inspection system for the semiconductor wafer manufacturing process inspects the position of the circuit pattern formed on the wafer by measuring the distance from the edge of the wafer to the strip processing area. After that, it is an inspection system that enables you to check the process status in real time. Process defects can be significantly reduced by applying a tester that has not been applied to the existing wafer strip process, edge etching process, and wafer ashing process. In addition, it is a technology for localizing semiconductor process inspection equipment that can analyze the outer diameter of the wafer and the state of pattern formation, which can secure process stability and improve wafer edge yield.

• Journal of the Semiconductor & Display Technology
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• v.15 no.3
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• pp.1-5
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• 2016

In order to apply sub-resolution assist feature (SRAF) in extreme ultraviolet lithography, the maximum non-printing SRAF width and lithography process margin needs to be improved. Through simulation, we confirmed that the maximum SRAF width of 6% attenuated phase shift mask (PSM) is large compared to conventional binary intensity mask. The increase in SRAF width is due to dark region's reflectivity of PSM which consequently improves the process window. Furthermore, the critical dimension error caused by variation of SRAF width and center position is reduced by lower change in diffraction amplitude. Therefore, we speculate that the margin of SRAF application will be improved by using PSM.

• Journal of Information Display
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• v.6 no.4
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• pp.40-44
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• 2005

Nanometer-sized bismuth oxide with a diameter of about 80 nm was used as a new electron reflection material in a 29" Real Flat CPT. This bismuth oxide was well dispersed over pH8 in slurry. Spray coating was performed clearly and uniformly and was ensured that there was no clogging of shadow mask hole. Coating thickness was expressed to the brightness of chromaticity for the sprayed layer and was also well controlled during the spraying process. Doming was improved by about 10% in spite of the similar coating weight in comparison with the average 3.5 ${\mu}m$ of the conventional bismuth oxide.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3276-3278
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• 1999

LIGA 기술을 제품의 대량생산에 적용하기 위해서는 한번에 넓은 면적을 노광할 수 있는 X-ray 마스크가 요구된다. 기존에 널리 사용되고 있는 SiN 멤브레인 마스크는 내구성이 좋지 않고 면적을 크게하기 어렵다. 따라서 본 연구에서는 이러한 단점을 보완하기 위해 상용 graphite sheet를 이용하여 X-ray 마스크를 제작하였다. 제작된 graphite 마스크와 SiN 마스크를 이용하여 동일한 조건에서 X-ray 노광 실험을 하였고 마스크의 외형변화를 관찰하였다. 그 결과 SiN 마스크는 에너지 2.3GeV, 평균 전류 110mA에서 약 18시간 만에 파괴되었으나 graphite mask는 60시간 경과 후에도 육안상의 변화는 관찰되지 않았다. 또한 graphite 마스크를 이용하여 제작된 미세구조물의 치수측정결과 오차가 $1{\mu}m$ 미만인 정밀한 구조물 제작이 가능함을 확인하였다.