• 한국지구물리탐사학회:학술대회논문집
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• 한국지구물리탐사학회 2007년도 공동학술대회 논문집
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• pp.225-230
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• 2007

A physical model experiment with GPR and 3-D resisitivity survey were conducted to investigate the geoelectrical response of hydrocarbon-impacted zone, so called smeared zone, on the geophysical data. The results from the experiment show that GPR signals were enhanced when LNAPL was present as a residual saturation in the water saturated system (${\varepsilon}_r$ = 21) due to less attenuation of the electromagnetic energy through the medium, compared to when the medium was saturated with only water (${\varepsilon}_r$ = 21). 3-D resistivity data obtained from the former gas station site demonstrate that the highly contaminated zones could be imaged with low resistivities attributed to the biodegradation of petroleum hydrocarbons at the aged, hydrocarbon-impacted sites. The study results also show that the geophysical methods, as a non-invasive sounding technique, can be a very useful tool for mapping hydrocarbon-contaminated zones.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2004년도 동계학술연구발표회 논문개요집
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• pp.125-126
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• 2004

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.229-232
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• 1999

We have measured the temperature dependence of thermoelectric power (TEP) and resistivity for the Sr$_{1-x}K_xBiO_3$ superconductor (x=0.45-0.6). At T=10.2K, the resisitivity starts to increase from zero and a rather broad superconducting phase transition (${\Delta}$T ${\sim}$ 2.3K) is observed. TEP at room temperature has a small negative value ( S =-1.96${\mu}$V/K), characteristic of metallic-like TEP. The temperature dependence of TEP shows two distinct features. With decreasing temperature from room temperature, the absolute value of TEP decreases and the sign of TEP changes from negative to positive around 200k. Also, the negative slope of TEP(dS/dT) decreases substantially and becomes rather flat at around 160k, which is a feature already noted in Ba$_{1-x}K_xBiO_3$[1].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.355-356
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• 2008

In this work, ZnO films doped with different contents of Indium (0.1at.%, 0.3at.%, 0.6at.%, respectively) were deposited on Si (111) substrate that has 1~20 $\Omega$cm by pulsed laser deposition (PLD) at $600^{\circ}C$ for 30min. The thickness of the films are about 250 nm. The structural, optical and electrical properties of the films were investigated using X-ray Diffraction (XRD), Atomic force microscope (AFM), Photoluminescence (PL) and Hall measurement. It has been found that RMS of the films is decreased and grain size is increased with increasing the contents of doped Indium. The results of the Photoluminescence properties were indicated that the films have UV emission about 380nm and shows a little red shitf with increasing contents of doped indium. The result of the Hall measurement shows that the concentration and resisitivity in doped ZnO are as changing as one order, respectively ${\sim}10^{18}/cm^2$, ${\sim}10^{-2}cm{\Omega}cm$.