• Title/Summary/Keyword: 3-D device simulation

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3D modeling of a surface acoustic wave for wireless sensors (무선 센서용 표면탄성파의 3 차원 모델링)

  • Cuong, Tran Ngoc;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.111-111
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    • 2009
  • In this work, we discuss simulation of surface acoustic wave device using Comsol Multiphysics. The structure SAW device based on piezoelectric thin film aluminum-nitride (AlN) on silicon was simulated. Some parameters of SAW device such as surface velocity, displacement of piezoelectric thin film were evaluated by software. Many modes and shapes of wave are also discussed in this paper. For evaluation physical parameters of AlN piezoelectric layer, the SAW resonator was modeled and simulation results were also compared with experiment results. we simulated arid evaluated the surface Rayleigh wave of AlN thin film on silicon substrate. Results simulation and experiment showed the surface velocity of AlN thin film was about 5200 m/s and shape of surface wave was also displayed. This paper has also proposed as method to study SAW characteristic of piezoelectric thin film and found out measurement values accurately of film such as stiffness matrix, piezoelectric matrix. These values are very important in calculation and design SAW device or MEMS device based on AlN piezoelectric layer.

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Soft Decision based Advanced Receiver to Suppress and Cancel the Interference in D2D Communication Underlaying Cellular Network (셀룰러 네트워크상의 D2D 통신 시스템에서 간섭 억제 및 제거를 위한 연판정 기반 향상된 수신기)

  • Moon, Sangmi;Chu, Myeonghun;Kim, Hanjong;Kim, Daejin;Kim, Cheolsung;Hwang, Intae
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.12
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    • pp.10-21
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    • 2015
  • Cellular Network assisted device-to-device (D2D) communication has been growing to reduce the overload of eNodeB and mitigate the frequency shortage. However, by sharing the uplink frequency resource with the cellular network, the interference between cellular and D2D is increased. In this paper, we propose the advanced receiver based on soft decision to reduce the interference between cellular and D2D. The proposed receiver can suppress and cancel the interference by calculating the unbiased estimation value of interference signal using minimum mean square error (MMSE) or interference rejection combing (IRC) receiver. The interference signal is updated using soft information expressed by log-likelihood ratio (LLR). We perform a system level simulation based on the 20-MHz bandwidth of the 3GPP LTE-A system. Simulation results show that the proposed receiver can improve SINR, throughput and spectral efficiency compared to conventional receivers.

반도체 소자에서의 전자장 수치해석

  • 강영태;김태한;황창규
    • 전기의세계
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    • v.39 no.3
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    • pp.39-46
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    • 1990
  • 반도체 내에서의 전자장 해석을 위한 Maxwell방정식의 단순화, 반도체 방정식의 전개, 물리적인 모델링, 수치해석 기법, 응용분야 및 차세대 반도체 기술 개발을 위한 device simulation 기술등을 review하였다. Poisson방정식의 고유한 quasi-static apporximation을 고찰하였으며, Drift 확산식의 유효성 범위를 증가시키기 위하여 각 물리적인 모델들을 review하였다. 반도체 수치해석에서 빈번히 사용해온 F.D.M.F.E.N.및 B.E.M기법의 장단점과 각각으 수치해석 기법을 이용한 Simulation tool들을 언급하였다. 또한 현재의 반도체 기술과 차세대 반도체 memory기술을 위한 Simulation의 응용분야 및 3차원 Simulation에 필요한 기본적인 tool의 조건을 언급하였다.

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An Advanced Model of on-Resistance for Low Voltage VDMOS Devices (저전압 VDMOS의 ON-저항 모델)

  • 김일중;김성동;최연익;한민구
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.3
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    • pp.267-273
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    • 1992
  • An advanced on-resistance model of VDMOS devices in the low voltage regimes is proposed and verified by 2-D device simulations. The model considers the lateral gaussian doping profiles in the channel region and exact current spreading angles in the epitaxial layer for both linear and cellular geometries by employing the conformal mapping, It is found out that the on-resistance of low voltage VDMOS may be overestimated considerably if it is analyzed by the conventional method. The 2-D device simulation results show that the proposed model is valid for the VDMOS devices in the low voltage regimes.

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Three-dimensional Modeling of Transient Enhanced Diffusion (과도 증속 확산(TED)의 3차원 모델링)

  • 이제희;원태영
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.6
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    • pp.37-45
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    • 1998
  • In this paper, we report the first three-dimensional simulation result of the transient enhanced diffusion(TED) of dopants in the ion-implanted silicon by employing our 3D semiconductor process simulator, INPROS system. In order to simulate three-dimensional TED redistribution of dopants in silicon, the dopant distributions after the ion implantation was calculated by Monte Carlo(MC) method, followed by finite element(FE) numerical solver for thermal annealing. Excellent agreement between the simulated 3D profile and the SIMS data has been obtained for ion-implanted arsenic and phosphorus after annealing the boron marker layer at 75$0^{\circ}C$ for 2 hours. Our three-dimensional TED simulation could successfully explain the reverse short channel effect(RSCE) by taking the 3D point defect distribution into account. A coupled TED simulation and device simulation allows reverse short channel effect on threshold to be accurately predicted.

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Design of A Haptic Device for Dismantling Process Using Excavator (굴삭기를 이용한 해체 장비용 햅틱 장치 설계)

  • Kim, Dong-Nam;Oh, Kyeong-Won;Hong, Dae-Hie;Park, Jong-Hyup
    • Proceedings of the KSME Conference
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    • 2007.05a
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    • pp.1190-1194
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    • 2007
  • Since the dismantling processes of building are very dangerous, there have been many studies to develop a remote operating devices using joystick. In this paper, in order to improve the operability of the dismantling actuator that is usually an excavator, a novel concept of tele-operated haptic device is proposed. Operators who use this haptic device with additional environmental sensing devices can work safely away from the dangerous sites. First, based on the concept design of the haptic device, the workspace mapping from the haptic device to the excavator is explored. Second, the kinematics which deals with the conversion from the 3 dimensional position information of the haptic device to the joint variable information of the backhoe is included. Lastly, 3D graphical simulation of both haptic device and the backhoe will be shown. This new design of the haptic device can be easily manufactured and gives the workers very convenient and transparent remote control capability.

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Process Considerations for 80-GHz High-Performance p-i-n Silicon Photodetector for Optical Interconnect

  • Cho, Seong-Jae;Kim, Hyung-Jin;Sun, Min-Chul;Park, Byung-Gook;Harris, James S. Jr.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.12 no.3
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    • pp.370-376
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    • 2012
  • In this work, design considerations for high-performance silicon photodetector are thoroughly investi- gated. Besides the critical dimensions of device, guidelines for process architecture are suggested. Abiding by those criteria for improving both direct-current (DC) and alternating-current (AC) perfor- mances, a high-speed low-operation power silicon photodetector based on p-i-n structure for optical interconnect has been designed by device simulation. An $f_{-3dB}$ of 80 GHz at an operating voltage of 1 V was obtained.

Visualization and Workspace Analysis of Manipulator using the Input Device in Virtual Environment (가상 환경에서 입력장치를 이용한 매니퓰레이터의 작업영역 분석 및 시각화)

  • Kim Sung Hyun;Song Tae Gil;Yoon Ji Sup;Lee Geuk
    • Journal of Digital Contents Society
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    • v.5 no.1
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    • pp.22-27
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    • 2004
  • To handle the high level radioactive materials such a spent fuel, the master-slave manipulaters (MSM) are wide1y used as a remote handling device in nuclear facilities such as the hot cell with sealed and shielded space. In this paper, the Digital Mockup which simulates the remote operation of the Advanced Conditioning Process(ACP) is developed. Also, the workspace and the motion of the slave manipulator, as well as, the remote operation task should be analyzed. The process equipment of ACP and Maintenance/Handling Device are drawn in 3D CAD model using IGRIP. Modeling device of manipulator is assigned with various mobile attributes such as a relative position, kinematics constraints, and a range of mobility. The 3D graphic simulator using the extermal input device of spare ball displays the movement of manipulator. To connect the exterral input device to the graphic simulator, the interface program of external input device with 6 DOF is deigned using the Low Level Tele-operation Interface(LLTI). The experimental result show that the developed simulation system gives much-improved human interface characteristics and shows satisfactory reponse characteristics in terms of synchronization speed. This should be useful for the development of work`s education system in the environment.

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Graphic Simulation of the Multi-joint Manipulator (다관절 조작기의 그래픽 시뮬레이션)

  • 이종열;송태길;김성현;박병석;윤지섭
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2001.04a
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    • pp.631-634
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    • 2001
  • In this study, the graphic simulation system of multi joint manipulator is developed to analyze and optimize the remote handling processes for the spent fuel assembly. This system consists of a 3-D graphical modeling system, a device assembling system, and a motion simulation system. To analyze and optimize the processes involved in multi-joint manipulator operation such as NFBC transportation process and bottom nozzle removal process, the virtual work place is implemented using a computer graphic technology. This virtual workcell is exactly same as that of the real environment. This graphic simulation system of the multi-joint manipulator can be effectively used for designing the main processes and maintenance processes of the spent fuel management.

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Improving Device Efficiency for n-i-p Type Solar Cells with Various Optimized Active Layers

  • Iftiquar, Sk Md;Yi, Junsin
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.2
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    • pp.70-73
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    • 2017
  • We investigated n-i-p type single junction hydrogenated amorphous silicon oxide solar cells. These cells were without front surface texture or back reflector. Maximum power point efficiency of these cells showed that an optimized device structure is needed to get the best device output. This depends on the thickness and defect density ($N_d$) of the active layer. A typical 10% photovoltaic device conversion efficiency was obtained with a $N_d=8.86{\times}10^{15}cm^{-3}$ defect density and 630 nm active layer thickness. Our investigation suggests a correlation between defect density and active layer thickness to device efficiency. We found that amorphous silicon solar cell efficiency can be improved to well above 10%.