• 전력전자학회:학술대회논문집
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• 전력전자학회 2005년도 전력전자학술대회 논문집
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• pp.430-432
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• 2005

This paper presents a novel, single stage, isolated, three-phase switching rectifier capable of switching at high frequency. The circuit topology Provides zero-voltage switching for all switches, output voltage regulation, unity input power factor, all in a single power conversion stage. Operating principle and experimental results in the 48V/100A DC power supply of three-phase single stage method are presented.

• 한국콘텐츠학회논문지
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• 제8권3호
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• pp.25-31
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• 2008

본 논문은 다중전원공급 SoC(System-on-Chip)에 사용될 저전력 단일전원 level-up/down shifter를 제안한다. 제안된 회로는 다양한 전원을 사용하는 IP간의 신호의 인터페이스 회로로 사용할 수 있으며, 단일전원을 사용함으로써 저전력으로 동작하고 시스템의 전원배선과 레이아웃의 복잡도 및 지연시간이 감소하는 장점을 가지고 있다. 제안된 level-up/down shifter는 각각 IP간에 신호들이 level-up 일 때는 500MHz 입력 주파수에서 동작하고 level-down일 때는 1GHz에서 동작하도록 설계했다. I/O 회로에 level-up/down shifter를 사용하면 시스템간의 신호를 연결할 때 잡음에 강하다는 사실도 검증했다. 시뮬레이션 결과는 0.18um CMOS 공정에서 각각 1.8V, 2.5V, 3.3V의 전원을 사용하여 검증했다.

• 전자공학회논문지C
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• 제34C권12호
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• pp.20-27
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• 1997

In this paper, a multiplying digital-to-analog converter (MDAC) circuit for low-power high-resolution CMOS algorithmic A/D converters (ADC's) is proposed. The proposed MDAC is designed to operte properly at a supply at a supply voltge between 3 V and 5 V and employs an analog0domain power reduction technique based on a bias switching circuit so that the total power consumption can be optimized. As metal-to-metal capacitors are implemented as frequency compensation capacitors, opamps' performance can be varied by imperfect process control. The MDAC minimizes the effects by the circuit performance variations with on-chip tuning circuits. The proposed low-power MDAC is implementd as a sub-block of a 10-bit 200kHz algorithmic ADC using a 0.6 um single-poly double-metal n-well CMOS technology. With the power-reduction technique enabled, the power consumption of the experimental ADC is reduced from 11mW to 7mW at a 3.3V supply voltage and the power reduction ratio of 36% is achieved.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2005년도 ICCAS
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• pp.206-211
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• 2005

The hearing aids specific operational amplifier described in this paper is a single-supply, low voltage CMOS amplifier. It works on 1.3V single-supply and gets a gain of 82dB. The 0.18${\mu}m$ CMOS process was chosen to reduce the driven voltage as well as the power dissipation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.54-57
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• 2002

In this study, a new programming method, to minimize the generation of Si-SiO$_2$ interface traps of scaled SONOS flash memory as a function of number of program/erase cycles has been proposed. In the proposed programming method, power supply voltage is applied to the gate, forward biased program voltage is applied to the source and the drain, while the substrate is left open, so that the program is achieved by Modified Fowler-Nordheim (MFN) tunneling of electron through the tunnel oxide over source and drain region. For the channel erase, erase voltage is applied to the gate, power supply voltage is applied to the substrate, and the source and drain are open. A single power supply operation of 3 V and a high endurance of 1${\times}$10$\^$6/ prograss/erase cycles can be realized by the proposed programming method. The asymmetric mode in which the program voltage is higher than the erase voltage, is more efficient than symmetric mode in order to minimize the degradation characteristics of scaled SONOS devices because electrical stress applied to the Si-SiO$_2$ interface is reduced by short programming time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.463-466
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• 2000

According to the development of the semiconductor micro device technology, IC chip trends the high integrated, low power tendency. Nowadays, it can be showed the tendency of single chip in system level. But in the system level, IC operates by multi power supply voltages. So, semiconductor process is necessary for these multi power operation. Therefore, in this paper, dual gate high voltage device that operate by multi power supply of 5V and 20V fabricated in the 0.5${\mu}{\textrm}{m}$ CMOS process technology and its electrical characteristics were analyzed. The result showed that the characteristics of the 5V device almost met with the SPICE simulation, the SPICE parameters are the same as the single 5V device process. And the characteristics of 20V device showed that gate length 3um device was available without degradation. Its current was 520uA/um, 350uA/um for NMOS, PMOS and the breakdown voltages were 25V, 28V.

• 전자공학회논문지C
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• 제34C권6호
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• pp.28-36
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• 1997

In this work, a highly linear video-speed CMOS current-mode digital-to-analog converter (DAC) is proposed. A newswitching scheme for the current cell matrix of the DAC simultaneously reduces graded and symmetrical errors to improve integral nonlinearities (INL). The proposed DAC is designed to operate at any supply voltage between 3V and 5V, and minimizes the glitch energy of analog outputs with degliching circuits developed in this work. The prototype dAC was implemented in a LG 0.8um n-well single-poly double-metal CMOS technology. Experimental results show that the differential and integral nonlinearities are less than .+-. LSB and .+-.0.8LSB respectively. The DAC dissipates 75mW at a 3V single power supply and occupies a chip area of 2.4 mm * 2.9mm.

• 마이크로전자및패키징학회지
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• 제24권3호
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• pp.63-69
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• 2017

본 논문은 드론의 체공시간 증대를 위해 고효율 전력관리 회로 및 시스템을 제안한다. 종래의 드론은 다수개의 직렬 배터리와 낮은 효율의 선형 레귤레이터 사용으로 무겁고 발열이 크며 이로 인한 전력누수 문제가 있었다. 본 논문에서는 3.7V 단일 Li-Po 배터리 셀을 사용할 수 있는 스위칭 방식의 승압형 DC-DC 전력변환 회로에 대한 연구를 다룬다. 본 연구를 통해 시제품 개발 결과 3.7V 입력, 5V 출력의 step-up regulation을 실현하였다. 또한 종래 선형 레귤레이터의 50% 수준이었던 전력효율 대비 최대 91.3% 효율과 $50^{\circ}C$ 이하의 표면온도를 달성하였으며, 0.02V/V 및 0.15V/A의 line/load regulation 성능을 측정으로 검증하였다. 본 연구결과를 통해 3.7V 단일 셀 배터리 사용으로 충방전을 위한 별도의 cell-balancing 회로가 필요하지 않게 되며, 높은 전력관리 효율로 드론의 체공시간을 획기적으로 개선시킬 수 있는 가능성을 확인하였다.

• ETRI Journal
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• 제27권5호
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• pp.579-584
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• 2005

A CMOS direct-conversion mixer with a single transistor-level topology is proposed in this paper. Since the single transistor-level topology needs smaller supply voltage than the conventional Gilbert-cell topology, the proposed mixer structure is suitable for a low power and highly integrated RF system-on-a-chip (SoC). The proposed direct-conversion mixer is designed for the multi-band ultra-wideband (UWB) system covering from 3 to 7 GHz. The conversion gain and input P1dB of the mixer are about 3 dB and -10 dBm, respectively, with multi-band RF signals. The mixer consumes 4.3 mA under a 1.8 V supply voltage.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권2호
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• pp.85-90
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• 2009

This paper presents a single supply PLC SoC ASIC with a built-in analog Front-end circuit. To achieve the low power consumption along with low cost, this PLC SoC employs fully CMOS Analog Front End (AFE) and several LDO regulators (LDOs) to provide the internal power for Logic Core, DAC and Input/output Pad driver. The receiver part of the AFE consists of Pre-amplifier, Gain Amplifier and 1 bit Comparator. The transmitter part of the AFE consists of 10 bit Digital Analog Converter and Line Driver. This SoC is implemented with 0.18 ${\mu}m$ 1 Poly 5 Metal CMOS Process. The single supply voltage is 3.3 V and the internal powers are provided using LDOs. The total power consumption is below 30 mA at stand-by mode to meet the Eco-Design requirement. The die size is 3.2 $\times$ 2.8 $mm^{2}$.