• Journal of the Korean institute of surface engineering
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• v.48 no.2
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• pp.33-37
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• 2015

High efficiency LED device is being concerned due to its high heat loss, and such heat loss will cause a shorter lifespan and lower efficiency. Since there is a demand for the materials that can release heat quickly into the external air, the organic insulating layer was required to be replaced with high thermal conductive materials such as metal or ceramics. Through anodizing the upper layer of Al, the Breakdown Voltage of 3kV was obtained by using an uniform thickness of $60{\mu}M$ aluminum oxide($Al_2O_3$) and was carried out to determine the optimum process conditions when thermal cracking does not occur. Two Ni layers were formed above the layer of $Al_2O_3$ by sputtering deposition and electroplating process, and saccharin was added for the purpose of minimizing the remain stress in electroplating process. The results presented that the 3-layer film including the Ni layer has an adhesive force of 10N and the thermal conductivity for heat dissipation is achieved by 150W/mK level, and leads to improvement about 7 times or above in thermal conductivity, as opposed to the organic insulation layer.

• Transactions on Electrical and Electronic Materials
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• v.10 no.1
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• pp.28-30
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• 2009

We have studied organic layer-thickness dependent electrical and optical properties of bottom- and top-emission devices. Bottom-emission device was made in a structure of ITO(170 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(100 nm), and a top-emission device in a structure of glass/Al(100 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(25 nm). A hole-transport layer of TPD (N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine) was thermally deposited in a range of 35 nm and 65 nm, and an emissive layer of $Alq_3$ (tris-(8-hydroxyquinoline) aluminum) was successively deposited in a range of 50 nm and 100 nm. Thickness ratio between the hole-transport layer and the emissive layer was maintained to be 2:3, and a whole layer thickness was made to be in a range of 85 and 165 nm. From the current density-luminance-voltage characteristics of the bottom-emission devices, a proper thickness of the organic layer (55 nm thick TPD and 85 nm thick $Alq_3$ layer) was able to be determined. From the view-angle dependent emission spectrum of the bottom-emission device, the peak wavelength of the spectrum does not shift as the view angle increases. However, for the top-emission device, there is a blue shift in peak wavelength as the view angle increases when the total layer thickness is thicker than 140 nm. This blue shift is thought to be due to a microcavity effect in organic light-emitting diodes.

• Current Optics and Photonics
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• v.1 no.4
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• pp.389-395
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• 2017

This paper investigates a method to improve the lighting performance of white light-emitting diodes (WLEDs), which are packaged using two separate remote phosphor layers, a yellow-emitting YAG:Ce phosphor layer and a red-emitting ${\alpha}-SrO{\cdot}3B_2O_3:Sm^{2+}$ phosphor layer. The thicknesses of these two layers are $800{\mu}m$ and $200{\mu}m$, respectively. Both of them are examined in conditions where the average correlated color temperatures (CCT) are 7700 K and 8500 K. For this two-layer model, the concentration of red phosphor is varied from 2% to 30% in the upper layer, while in the lower layer the yellow phosphor concentration is kept at 15%. It was found interestingly that the lighting properties such as color rendering index (CRI) and luminous flux are enhanced significantly, while the color uniformity is maintained in a relatively close range to the one of one-layer configuration (measured at the same correlated color temperature). Besides, the transmitted and reflected light of each phosphor layer are revised by combining Kubelka-Munk and Mie-Lorenz theories. Through analysis, it is demonstrated that the packaging configuration of two-layer remote phosphor that employs red-emitting ${\alpha}-SrO{\cdot}3B_2O_3:Sm^{2+}$ phosphor particles provides a practical solution for general WLEDs lighting.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.313-313
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• 2010

The performance of polymer photovoltaic cells based on blends of poly(3-hexylyhiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) is strongly influenced by blend composition and thickness. Polymer photovoltaic cells based on bulk-heterojunction have been fabricated with a structure of ITO/poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)-pentacene/poly (3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM)/Al. We have prepared PEDOT:PSS by dissolving pentacene in N-methylpyrrolidine (NMP) and mixing with PEDOT:PSS. Pentacene was added a maximum concentration of approximately 5.5mg to the PEDOT:PSS solution and sonicated for 10 min. Active layer (P3HT:PCBM) (1:1) was strongly influenced by PEDOT:PSS-pentacene. We have investigated the performance of photovoltaic device with different concentration of P3HT:PCBM (1:1) 2.0wt%, 2.2wt%, 2.4wt% and 2.6wt%, respectively. The photocurrent and power conversion efficiency (PCE) showed a maximum between 2.0wt% and 2.2wt% concentration of P3HT:PCBM. This implied that both morphology and electron transport properties of the layer influenced the performance of the present photovoltaic cells. As the concentration of P3HT:PCBM blends as an active layer was increased, the power conversion efficiency was decreased. P3HT:PCBM layer and PEDOT:PSS-pentacene layer were characterized by work function, UV-visible absorption, atomic force microscopy (AFM), X-ray diffraction (XRD) and scanning electron microscope (SEM).

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.2 no.4
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• pp.171-183
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• 2008

Nowadays, wireless packet data services are provided over Wireless MAN (WMAN) at a high data service rate, while 3G cellular networks provide wide-area coverage at a low data service rate. The integration of mobile WiMAX and 3G networks is essential, to serve users requiring both high-speed wireless access as well as wide-area connectivity. In this paper, we propose a cross-layer optimization scheme for a vertical handover between mobile WiMAX and 3G cellular networks. More specifically, L2 (layer 2) and L3 (layer 3) signaling messages for a vertical handover are analyzed and reordered/combined, to optimize the handover procedure. Extensive simulations using ns-2 demonstrate that the proposed scheme enhances the performance of a vertical handover between mobile WiMAX and 3G networks: low handover latency, high TCP throughput, and low UDP packet loss ratio.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.102-105
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• 2011

This work describes the characteristics of zinc oxide (ZnO) thin films formed on a polycrystalline (poly) 3C-SiC buffer layer using a sol-gel process. The deposited ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence (PL) spectra. ZnO thin films grown on the poly 3C-SiC buffer layer had a nanoparticle structure and porous film. The effects of post-annealing on ZnO film were also studied. The PL spectra at room temperature confirmed the crystal quality and optical properties of ZnO thin films formed on the 3C-SiC buffer layer were improved due to close lattice mismatch in the ZnO/3C-SiC interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.678-681
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• 2011

We have investigated the effect of organic thin film on the driving voltage of OLED (organic light emitting diode) by inserting a 5 nm thick 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) or triphenylphosphineoxide ($Ph_3PO$) between tris-(8-hydroxyquinoline)aluminum ($Alq_3$) electron transport layer and 4,4'-bis(2,2'-diphyenylvinyl)-1,1'-biphenyl (DPVBi) emission layer. The device with 5 nm thick $Ph_3PO$ layer exhibited higher maximum current efficiency and lower driving voltage than the device with BCP layer, resulting from better electron injection from $Alq_3$ to DPVBi in the device with $Ph_3PO$ layer.

• Korean Chemical Engineering Research
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• v.52 no.3
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• pp.340-346
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• 2014

Continuous and dense ZIF-7 membranes were successfully synthesized on ${\alpha}-Al_2O_3$ porous substrate via two-step crystallization technique. ZIF-7 seeding layer was first deposited on porous ${\alpha}-Al_2O_3$ substrate by in-situ low temperature crystallization, and then ZIF-7 membrane layer can be grown through the secondary high-temperature crystallization. Two synthesis solutions with different concentration were used to prepare ZIF-7 seeding layer and membrane layer on porous ${\alpha}-Al_2O_3$ substrate, respectively. As a result, a continuous and defect-free ZIF-7 membrane layer can be prepared on porous ${\alpha}-Al_2O_3$ substrate, as confirmed by scanning electron microscope. XRD characterization shows that the resulting membrane layer is composed of pure ZIF-7 phase without any impurity. A single gas permeation test of $H_2$, $O_2$, $CH_4$ or $CO_2$ was conducted based on our prepared ZIF-7 membrane. The ZIF-7 membrane exhibited excellent H2 molecular sieving properties due to its suitable pore aperture and defect-free membrane layer.

• Journal of the Korean Geophysical Society
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• v.3 no.4
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• pp.215-226
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• 2000

In order to map the acoustic basement and to locate fracture zones in the Galgok fault, seismic refraction data were acquired near the Chonbuk ranch in Gyeongju. Along three profiles of 72m(Line 1), 72m(Line 2), and 36m(Line 3) long, seismic signals were generated by a 5kg hammer. The refraction data were collected by employing twelve 8 Hz geophones at an interval of 3m and recording time of 192ms at a sampling rate of 0.2ms. The data are interpreted using GRM method. The top layer (Layer 1) is characterized as the velocity of approximately250 m/s and thickness of approximately 2.1m. This layer is regarded as a soil layer. Underneath Layer 1 lies unconsolidated layer (Layer 2) whose refraction velocity is determined to be $1,030{\sim}1,400m/s$. Layer 2 is approximately 4.6m thick and is regarded as a Quaternary gravel layer. The third layer (Layer 3) has the mean refraction velocity of $2,100{\sim}2,200m/s$ and is interpreted to be the acoustic basement. In some parts of Lines 1 and 3, the difference in depth to the top of Layer 2 is greater than 20 cm indicating the possibility of existence of Quaternary faults. Along Line 3 and the eastern part of Line 1, refracted energy from the acoustic basement was not recorded. This may highly indicate that a relatively large scale fault exists under the western part of Line 1.

• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.381-387
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• 2000

Si3N4/stainless steel 316 joints with Ni buffer layer were fabricated by direct active brazing method (DIB) using Ag-Cu-Ti brazing alloy only and double brazing method (DOB) using Ag-Cu brazing alloy with Si3N4 pretreated with Ag-Cu-Ti brazing alloy. For the joint brazed by DIB method, Ti was segregated at the Si3N4/brazing alloy interface, but was not enough to form a stable joint interface. In addition, large amounts of Ni-Ti inter-metallic compounds were formed in tehbrazing alloy near the joint interface, which could deplete the contents of Ti involved in the interfacial reaction. However, for the joint brazed by DOB method, segregation of Ti at the joint interface were enough to enhance the formation of stable interfacial reaction products such as TiN and Ti-Si-Ni-N-(Cu) multicompounds, which restricted the formation of Ni-Tio inter-metallic compounds in the brazing alloy during brazing with Ni buffer layer. Fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was much improved by using DOB method rather than DIB method. It could be deduced that the differences of fracture strength of the joint with Ni buffer layer depending on brazing process adapted were directly affected by the formation of stable joint interface and the change in microstructure of the brazing alloy near the joint interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of Ni buffer layer in the joint was increased from 0.1 mm to 10 mm. It seems to due to the increased residual stress in the joint as the thickness of Ni buffer layer is increased. The maximum fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was 386 MPa, and the fracture of joint was originated at Si3N4/brazing alloy joint interface and propagated into Si3N4 matrix.