• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
• /
• pp.63.1-63.1
• /
• 2015

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, van der Waals (vdW) heterostructures using two dimensional (2D) atomic crystals such as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMDCs) have been attracted intensely. In particular, for high performance of vdW heterostructures device, ultraclean interface between stacked 2D atomic crystals should be guaranteed. In this talk, I will present fabrication and characterization of the vdW field effect transistors toward performance enhancement by employing TMDCs channel, h-BN insulating layer and graphene electrode. Furthermore, it will also be introduced the characterization and surface engineering of graphene for gas molecule sensor.

• 한국전자파학회논문지
• /
• 제18권2호
• /
• pp.199-205
• /
• 2007

본 논문에서는 초고속 디지털 PCB 회로에서 발생하는 GBN(Ground Bounce Noise)을 억제하기 위한 새로운 EBG(Electromagnetic Bandgap) 구조의 전원면을 제안하였다. 제안된 구조는 육각형 모양의 단위 셀과 각 셀을 연결하는 선로로 구성되어 있다. 육각형 모양의 단위 셀은 등방성을 띄어 인접 셀의 각 포트 사이의 전달 특성을 동일하게 한다. 제안된 구조는 실제 제작, 측정되었고 330 MHz부터 5.6 GHz까지 넓은 주파수 대역에서 -30 dB 이하로 GBN을 억제하는 특성을 나타낸다. Electromagnetic Interference(EMI) 방사 측정 시에도 일반 전원면/접지면에 비해 낮은 EMI 특성을 나타낸다. 본 논문에서 제안한 육각형 EBG 구조의 전원면은 실제 EBG 전원면의 적용에 효율적으로 작용하여 초고속 디지털 회로의 EMI 문제를 해결하는 데 기여할 것으로 기대된다.

• 대한화학회지
• /
• 제54권2호
• /
• pp.183-191
• /
• 2010

1-Palmitoyl-$d_{31}$-2-oleoyl-sn-glycero-3-phosphatidylcholine (POPC_$d_{31}$)로 이루어진 지질 이중막에 항균성 펩타이드 magainin 2와 aurein 3.3이 작용했을 때 일어나는 상변화를 중수소 고체 핵자기 공명 스펙트럼을 관측하여 탐구하였다. 측정된 중수소 고체 핵자기 공명 스펙트럼의 선모양을 이론적 모델 구조를 통하여 모사함으로써, 펩타이드-지질 혼합상태의 기하학적 구조상수 및 동력학적 표면 확산 계수 등을 구하였다. 펩타이드의 혼합 이후 5일 이내의 짧은 작용시간에는 지질 이중막의 정렬이 파괴되는 현상이 나타났으나, 100일 이후에는 magainin 2에 의해서는 타원형 원환체 기공 (elliptic toroidal pore)이, aurein 3.3에 의해서는 6각형 단면 막대구조 상(hexagonal phase)이 관측되었다. 지질 이중막 표면의 전하밀도가 항균성 펩타이드의 작용에 미치는 효과를 보기 위해 산성 지질인 1-palmitoyl-2-oleoyl-sn-glycero-3-phosphatidylglycerol (POPG)를 함유한 POPC_$d_{31}$/POPG 지질 이중막에 대해서도 동일한 실험을 수행하였다. 동일한 ${\alpha}$-나선형 구조를 가지는 두 펩타이드가 두 종류의 지질 이중막에 작용하는 과정의 차이를 확인할 수 있었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.72-72
• /
• 2012

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, electronic devices using two dimensional (2D) atomic crystals have been studied intensely. Especially, graphene which have unprecedented performance fulfillments in versatile research fields leads a parade of 2D atomic crystals. In this talk, I will introduce the electrical characterization and applications of graphene for prominently electrical transistors realization. Even the rising 2D atomic crystals such as hexagonal boron nitride (h-BN), molybdenum disulfide (MoS2) and organic thin film for field effect transistor (FET) toward competent enhancement will be mentioned.

• 한국재료학회지
• /
• 제20권5호
• /
• pp.252-256
• /
• 2010

The study was done to change the morphology and pore size of SBA-15 silica, and the characteristics of SBA-15 silica were investigated with TG-DSC, XRD, SEM, TEM and N2 adsorption-desorption under changing aging conditions. SBA-15 silica having a 2D-hexagonal structure was synthesized and confirmed by SEM and TEM. The structure of mesoporus silica SBA-15 showed a pore having regularly formed hexagonal structure and a passage having a cylindrical shape. This result is in good agreement with the pore forming in XRD and cylindrical shape of the structure in $N_2$ adsorption-desorption isotherm. SBA-15 silica showed a large BET surface area of $603-698\;m^2/g$, a pore volume of $0.673-0.926\;cm^3/g$, a large pore diameter of 5.62-7.42 nm, and a thick pore wall of 3.31-4.37 nm. This result shows that as the aging temperature increases, the BET surface area, pore volume, and pore diameter increase but the pore wall thickness decreases. The BET surface areas in SM-2 and SM-3 are as large as $698\;m^2/g$. However, SM-2 has a large surface area and forms a thick pore wall, when the aging temperature is $100^{\circ}C$ and is synthesized into stable mesoporous SBA-15 silica.

• 한국환경과학회지
• /
• 제5권1호
• /
• pp.93-102
• /
• 1996

Hydrodynamic characteristics such as gas holdup, liquid circulation velocity and bed expansion in a hexagonal inverse fluidized bed were investigated using air-water system by changing the ratio ($A_d$/$A_r$) of cross-sectional area between the riser and the downcomer, the liquid level($H_1$/H), and the superficial gas velocity($U_g$). The gas holdup and the liquid circulation velocity were steadily increased with the superficial gas velocity increasing, but at high superficial gas velocity, some of gas bubbles were carried over to a downcomer and circulated through the column. When the superficial gas velocity was high, the $A_d$/$A_r$ ratio in the range of 1 to 2.4 did not affect the liquid circulation velocity, but the maximum bed expansion was obtained at $A_d$/$A_r$ ratio of 1.25. The liquid circulation velocity was expressed as a model equation below with variables of the cross-sectional area ratio($A_d$/$A_r$) between riser to downcomer, the liquid level($H_1$/H), the superficial gas velocity($U_g$), the sparser height[(H-$H_s$)/H], and the draft Plate level($H_b$/H). $U_{ld}$ = 11.62U_g^{0.75}$${(\frac{H_1}{H})}^{10.30}$${(\frac{A_d}{A_r})}^{-0.52}$${(\frac({H-H_s}{H})}^{0.91}$${(\frac{H_b}{H})}^{0.13}$

• Journal of Advanced Marine Engineering and Technology
• /
• 제25권2호
• /
• pp.345-345
• /
• 2001

This paper was studied on the characteristics of galvanic corrosion and its protection on heat exchanger tube plate in the sea water. In this paper, behavior of pitting corrosion of Ni-al bronze connected with Ti tube was measured af flow velocity of 0 m/s and 2.4 m/s. To protect galvanic corrosion, the protection characteristics of Ni-Al bronze connected with Ti tube by Zn-base alloys galvanic anode and hexagonal nylon insert was investigated. Main results obtained asre al follows: 1) The galvanic corrosion of Ni-Al bronze connected with Ti-tube is more active than single Ni-al bronze. 2) As the circuit resistance increase under the cathodic protection employing Zn-base alloys galvanic anode, Ni-al bronze connected with Ti tube is cathodically unpolarized. 3) The corrosion of Ni-Al bronze connected with Ti tube by nylon insert controls approximately 73% than not nylon insert.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.252.1-252.1
• /
• 2013

Hexagonal boron nitride (h-BN) is a two dimensional material which has high band-gap, flatness and inert properties. This properties are used various applications such as dielectric for electronic device, protective coating and ultra violet emitter so on. 1) In this report, we were growing h-BN sheet directly on sapphire 2"wafer. Ammonia borane (H3BNH3) and nickel were deposited on sapphire wafer by evaporate method. We used nickel film as a sub catalyst to make h-BN sheet growth. 2) During annealing process, ammonia borane moved to sapphire surface through the nickel grain boundary. 3) Synthesized h-BN sheet was confirmed by raman spectroscopy (FWHM: ~30cm-1) and layered structure was defined by cross TEM (~10 layer). Also we controlled number of layer by using of different nickel and ammonia borane thickness. This nickel film supported h-BN growth method may propose fully and directly growing on sapphire. And using deposited ammonia borane and nickel films is scalable and controllable the thickness for h-BN layer number controlling.

• 대한전자공학회논문지
• /
• 제21권2호
• /
• pp.36-46
• /
• 1984

Ga1-xlnxSe 단결정을 X=0.0∼0.1영역과 X=0.8-1.0영역에서 Bridgman방법으로 성장시켰다. 성장된 Ga1-xlnxSe 단결정은 X=0.0∼0.1영역에서는 hexagonal구조, X=0.8∼1.0영역에서는 rhombohedral 구조를 가지고 있었다. CaInSe 단결정은 간접천이형 energy gap을 가지고 있었으며, 15°K에서 250°K로 시편의 온도가 상승할 때 energy gap 은 감소되었고, 온도계수는 (-2.4∼-4.3)×10-4eV/K으로 주어졌다. Ga1-xlnxSe 단결정의, energy gap에 온도 의존성은 Schmid의 electron-phonon 상호작용의 이론으로 설명할 수 있었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.286-286
• /
• 2016

Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.