• Title/Summary/Keyword: 2D solid

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Characterization of the Material Properties of 0.68Pb ($Mg_{1}$3/$Nb_{2}$3/)$O_3$-0.32PbT$iO_3$ Single Crystals Grown by the Solid-State-Crystal-Growth Method (고상단결정법으로 성장시킨 0.68Pb ($Mg_{1}$3/$Nb_{2}$3/)$O_3$-0.32PbT$iO_3$ 압전단결정의 물성평가)

  • 이상한;노용래
    • The Journal of the Acoustical Society of Korea
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    • v.23 no.2
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    • pp.103-108
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    • 2004
  • In this paper, all the materials constants of the PMN-32%PT single crystals grown by the solid state crystal growth method were measured by the resonance method. PMN-PT crystals of tetragonal symmetry have six elastic constants, three piezoelectric constants and two dielectric constants for their independent material constants. These materials constants were extracted from six sets of crystal samples of each different geometry to have different vibration modes respectively. Measured results showed that the crystal has larger electromechanical coupling factor k/sub 33/ (∼86%) and piezoelectric constant d/sub 33/ (∼1200pC/N) than conventional piezoceramics. Validity of the measurement was confirmed through comparison of the results with the impedance spectrum from finite element analysis of the samples and the results measured with a commercial do meter.

Design and Fabrication of X-Band 50 W Pulsed SSPA Using Pulse Modulation and Power Supply Switching Method (펄스 변조 및 전원 스위칭 방법을 혼용한 X-대역 50 W Pulsed SSPA 설계 및 제작)

  • Kim, Hyo-Jong;Yoon, Myoung-Han;Chang, Pil-Sik;Kim, Wan-Sik;Lee, Jong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.4
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    • pp.440-446
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    • 2011
  • In this paper, a X-band 50 W pulsed solid state power amplifier(SSPA) is designed and fabricated for radar systems. The SSPA consists of a driver amplifier, a high power amplifier, and a pulse modulator. The high power stage employes four 25 W GaAs FET to deliver 50 W at X-band. To meet the stringent target specification for the SSPA, we used a new hybrid pulse switching method, which combine the advantage of pulse modulation and bias switching method. The fabricated SSPA shows a power gain of 44.2 dB, an output power of 50 W over a 1.12 GHz bandwidth. Also, pulse droop < 1 dB meet the design goals and a rise/fall time is less than 12.45 ns. Fabricated X-band pulsed SSPA size is compact with overall size of $150{\times}105{\times}30\;mm^3$.

A Development of the X-Band 63 Watt Pulsed SSPA for Radar (레이더용 X-대역 63 Watt Pulsed SSPA 개발)

  • Chong, Min-Kil;Na, Hyung-Gi
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.3
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    • pp.380-388
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    • 2011
  • In this paper, we developed the X-band 63 watt pulsed SSPA(Solid State Power Amplifier) by using HMIC(Hybrid Microwave Integrated Circuits). The pulsed SSPA consists of power supply and 3-stage amplifier modules : pre-amplifier stage, driver-amplifier stage, final-amplifier stage. The developed pulsed SSPA provides more than 63 watts of output power with a short pulse width and the duty cycle of up to 1.2 % at $70^{\circ}C$. The fabricated module offers great than 37 dB of saturated gain across the operating band. Input and output VSWR is <1.5:1. This module has an average current of 400 mA typical and operates at a +28 $V_{dc}$ supply. The developed SSPA in this paper can apply to pulsed Doppler radar with high speed operation.

Design of pHEMT channel structure for single-pole-double-throw MMIC switches (SPDT 단일고주파집적회로 스위치용 pHEMT 채널구조 설계)

  • Mun Jae Kyoung;Lim Jong Won;Jang Woo Jin;Ji, Hong Gu;Ahn Ho Kyun;Kim Hae Cheon;Park Chong Ook
    • Journal of the Korean Vacuum Society
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    • v.14 no.4
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    • pp.207-214
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    • 2005
  • This paper presents a channel structure for promising high performance pseudomorphic high electron mobility transistor(pHEMT) switching device for design and fabricating of microwave control circuits, such as switches, phase shifters, attenuators, limiters, for application in personal mobile communication systems. Using the designed epitaxial channel layer structure and ETRI's $0.5\mu$m pHEMT switch process, single pole double throw (SPDT) Tx/Rx monolithic microwave integrated circuit (MMIC) switch was fabricated for 2.4 GHz and 5 GHz band wireless local area network (WLAN) systems. The SPDT switch exhibits a low insertion loss of 0.849 dB, high isolation of 32.638 dB, return loss of 11.006 dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V These performances are enough for an application to 5 GHz band WLAN systems.

Surface morphology and deuterium retention in W and W-HfC alloy exposed to high flux D plasma irradiation

  • Yongkui Wang;Xiaochen Huang;Jiafeng Zhou;Jun Fang;Yan Gao;Jinlong Ge;Shu Miao;Zhuoming Xie
    • Nuclear Engineering and Technology
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    • v.55 no.2
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    • pp.575-579
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    • 2023
  • In this work, pure W and W-0.5wt%HfC alloy (WHC05) were fabricated by sintering and hot-rolling following the same processing route. After exposing to a high flux deuterium plasma irradiation with the D+ flux to three fluences of 6.00 × 1024, 2.70 × 1025 and 7.02 × 1025 D/m2, the evolution of surface morphology, deuterium retention and hardening behaviors in pure W and WHC05 has been studied. The SEM results show the formation of D blisters on the irradiated area, and with the increase of D implantation, the size of these blisters increases from 200 ~ 500 nm (2.70 × 1025 D/m2) to 1 ~ 2 ㎛ (7.02 × 1025 D/m2) in WHC05 and from 1 ~ 2 ㎛ (2.70 × 1025 D/m2) to > 3 ㎛ (7.02 × 1025 D/m2) in pure W, respectively. A higher D retention and obvious hardening are observed in pure W than that of the WHC05 alloy, indicating an improve radiation resistance in WHC05 compared to pure W.

Preparation and Reactions of Bis(trimethylsilylmethyl)-1,2-bis(disphenylphosphino)ethanenickel(II) (비스(트리메틸실릴메틸) 1,2-비스(디페닐포스피노)에탄니켈(II)의 합성 및 반응)

  • Chong Shik Chin;M. D. Curtis
    • Journal of the Korean Chemical Society
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    • v.25 no.5
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    • pp.311-317
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    • 1981
  • A new nickel(II) compound, $Ni(CH_2SiMe_3)_2((C_6H_5)_2PCH_2CH_2P(C_6H_5)_2)$, 1, has been prepared by the reaction of $NiCl_2((C_6H_5)_2PCH_2CH_2P(C_6H_5)_2)$ with $Me_3SiCH_2Li$. The compound, 1, is stable under nitrogen at room temperature both in solution and in the solid state. Thermal decomposition of 1 in solution or in the solid produces the reductive coupling product, $Me_3SiCH_2CH_2SiMe_3$ which is also afforded by the reactions of 1 with CO and $O_2$ at room temperature, and with $(C_6H_5)_2PCH_2CH_2P(C_6H_5)_2$ at 80${\circ}$C.

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Development of 2-kW Class C Amplifier Using GaN High Electron Mobility Transistors for S-band Military Radars (S대역 군사 레이더용 2kW급 GaN HEMT 증폭기 개발)

  • Kim, Si-Ok;Choi, Gil-Wong;Yoo, Young-Geun;Lim, Byeong-Ok;Kim, Dong-Gil;Kim, Heung-Geun
    • The Journal of the Korea institute of electronic communication sciences
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    • v.15 no.3
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    • pp.421-432
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    • 2020
  • This paper proposes a 2-kW solid-state power amplifier (SSPA) developed by employing power amplifier pallets designed using gallium-nitride high electron mobility transistors, which is used in S-band military radars and to replace existing traveling-wave tube amplifier (TWTA). The SSPA consists of a high-power amplifier module, which combines eight power amplifier pallets, a drive amplifier module, a digital control module, and a power supply unit. First, the amplifier module and component were integrated into a small package to account for space limitations; next, an on-board harmonic filter was fabricated to reject spurious components; and finally, an auto gain control system was designed for various duty ratios because recent military radar systems are all active phase radars using the pulse operation mode. The developed SSPA exhibited a max gain of 48 dB and an output power ranging between 63-63.6 dBm at a frequency band of 3.1 to 3.5 GHz. The auto gain control function showed that the output power is regulated around 63 dBm despite the fluctuation of the input power from 15-20 dBm. Finally, reliability of the developed system was verified through a temperature environment test for nine hours at high (55 ℃) / low (-40℃) temperature profile in accordance with military standard 810. The developed SSPA show better performance such as light weight, high output, high gain, various safety function, low repair cost and short repair time than existing TWTA.

Evaluation of Applicability for 3D Scanning of Abandoned or Flooded Mine Sites Using Unmanned Mobility (무인 이동체를 이용한 폐광산 갱도 및 수몰 갱도의 3차원 형상화 위한 적용성 평가)

  • Soolo Kim;Gwan-in Bak;Sang-Wook Kim;Seung-han Baek
    • Tunnel and Underground Space
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    • v.34 no.1
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    • pp.1-14
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    • 2024
  • An image-reconstruction technology, involving the deployment of an unmanned mobility equipped with high-speed LiDAR (Light Detection And Ranging) has been proposed to reconstruct the shape of abandoned mine. Unmanned mobility operation is remarkably useful in abandoned mines fraught with operational difficulties including, but not limited to, obstacles, sludge, underwater and narrow tunnel with the diameter of 1.5 m or more. For cases of real abandoned mines, quadruped robots, quadcopter drones and underwater drones are respectively deployed on land, air, and water-filled sites. In addition to the advantage of scanning the abandoned mines with 2D solid-state lidar sensors, rotation of radiation at an inclination angle offers an increased efficiency for simultaneous reconstruction of mineshaft shapes and detecting obstacles. Sensor and robot posture were used for computing rotation matrices that helped compute geographical coordinates of the solid-state lidar data. Next, the quadruped robot scanned the actual site to reconstruct tunnel shape. Lastly, the optimal elements necessary to increase utility in actual fields were found and proposed.

Determination of the Position and Velocity of the Solid-Liquid Interface During Directional Solidification of Metals based on Guided Ultrasonic Waves (유도초음파를 이용하여 금속의 방향성 고체화과정에서 고체-액체 경계면의 위치와 속도결정)

  • 김태진;슈마크텔미샤엘;그릴볼프강;쉬벤부쉬안드레;찜머만게르하르트
    • The Journal of the Acoustical Society of Korea
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    • v.17 no.2
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    • pp.79-83
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    • 1998
  • 높은 온도에서 금속물질이 응고되는 동안에 물질의 구조는 결정성장속도비율에 따 라 크게 좌우된다. 유도초음파를 기초로 한 펄스-에코 초음파실험기술과 함께 고체-액체 경 계면의 위치와 속도를 실시간으로 측정할 수 있어 고체화되는 동안의 용광로 파라메터들을 조절하는데 사용될 수 있다. 실험은 Bridgman형의 용광로에서 CuMn-막대시료에 대하여 서로 다른 냉각비율로 수행되었다. 열적평형상태에서 경계면의 위치에 대한 측정분해능은 약10㎛이다.

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3D Object Picking in Web-based Design System

  • Kim, Dong-Hyun;Yun, Bo-Yeul;Kim, Eung-Kon
    • Journal of information and communication convergence engineering
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    • v.1 no.2
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    • pp.82-87
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    • 2003
  • We are able to work on the shared virtual space in Web-based Collaborative Design System using only Internet and Web browser. Then the users will share 3D objects and must be able to pick the objects effectively which they want to manipulate. In this paper, picking is implemented not only by computing intersection of mouse pointer with the objects of the virtual world, but also by using capabilities and attributes of scene graph node, by setting bounds intersection testing instead of geometric intersection testing, by limiting the scope of the pick testing, using Java 3D. These methods can reduce the computation of picking and can pick 3D objects effectively and easily using the system of hierarchy.