• Title/Summary/Keyword: 2D/3D switch

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Perceived color shift of ceramics according to the change of illuminating light with spectroradiometer

  • Cha, Hyun-Suk;Yu, Bin;Lee, Yong-Keun
    • The Journal of Advanced Prosthodontics
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    • v.5 no.3
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    • pp.262-269
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    • 2013
  • PURPOSE. Perceived color of ceramics changes by the spectral power distribution of ambient light. This study aimed to quantify the amount of shifts in color and color coordinates of clinically simulated seven all-ceramics due to the switch of three ambient light sources using a human vision simulating spectroradiometer. MATERIALS AND METHODS. CIE color coordinates, such as $L^*$, $a^*$ and $b^*$, of ceramic specimens were measured under three light sources, which simulate the CIE standard illuminant D65 (daylight), A (incandescent lamp), and F9 (fluorescent lamp). Shifts in color and color coordinate by the switch of lights were determined. Influence of the switched light (D65 to A, or D65 to F9), shade of veneer ceramics (A2 or A3), and brand of ceramics on the shifts was analyzed by a three-way ANOVA. RESULTS. Shifts in color and color coordinates were influenced by three factors (P<.05). Color shifts by the switch to A were in the range of 5.9 to 7.7 ${\Delta}E{^*}_{ab}$ units, and those by the switch to F9 were 7.7 to 10.2; all of which were unacceptable (${\Delta}E{^*}_{ab}$ > 5.5). When switched to A, CIE $a^*$ increased (${\Delta}a^*$: 5.6 to 7.6), however, CIE $b^*$ increased (${\Delta}b^*$: 4.9 to 7.8) when switched to F9. CONCLUSION. Clinically simulated ceramics demonstrated clinically unacceptable color shifts according to the switches in ambient lights based on spectroradiometric readings. Therefore, shade matching and compatibility evaluation should be performed considering ambient lighting conditions and should be done under most relevant lighting condition.

2×2 Ti:LiNbO3 Waveguide Digital Optical Switches

  • Kim Seung-Jae;Jung, Hong-Sik;Lee, Han-Young
    • Journal of the Optical Society of Korea
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    • v.7 no.4
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    • pp.253-257
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    • 2003
  • We propose and demonstrate a novel polarization- and wavelength-independent digital electrooptic switch in $Ti:LiNbO_3$ with switching voltage of ${\pm}$32V at $1.55{\mu}m$ wavelength. This $2{\times}2$ integrated optic switch is characterized by a step-like response to the applied voltage. Switching is achieved through adiabatic mode evolution in an asymmetric waveguide junction. An average insertion loss of ∼4.5dB and polarization independent switching with average crosstalk of -12dB are achieved.

UA Study on the Polarization Selective Antenna for UHF RFID System (UHF RFID 시스템을 위한 Polarization selective 안테나 연구)

  • Lee, Sa-Won;Song, Woo-Yong
    • Journal of the Korea Society of Computer and Information
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    • v.15 no.7
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    • pp.67-74
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    • 2010
  • TIn this paper, it is designed the polarization selective antenna for UHF RFID system. The proposed antenna is consist of microstrip patch antenna with dual feeding and two SPDT switches and a SP4T switch and 3dB hybrid coupler. Through control of voltage of switches, the proposed reader antenna can select horizontally linear polarization, vertically linear polarization, left-hand circular polarization (LHCP) and right hand circular polarization (RHCP). The proposed reader antenna satisfied 2:1 VSWR at 902MHz~928MHz. and it has under 3dB AR(axial ratio). Peak gain of antenna is 7.71dBi, 7.55dBi with linear polarization and 7.31dBic, 7.81dBic with circular polarization at x-y plane. Also Axial ratio of antenna is 2.01~2.83dB and 2.02~2.60dB respectively. It is satisfied 3dB axial ratio.

Domestic Development and Module Manufacturing Results of W-band PA and LNA MMIC Chip (W-대역 전력증폭 및 저잡음증폭 MMIC의 국내개발 및 모듈 제작 결과)

  • Kim, Wansik;Lee, Juyoung;Kim, Younggon;Yu, Kyungdeok;Kim, Jongpil;Seo, Mihui;Kim, Sosu
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.21 no.3
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    • pp.29-34
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    • 2021
  • For the purpose of Application to the small radar sensor, the MMIC Chips, which are the core component of the W-band, was designed in Korea according to the characteristics of the transceiver and manufactured by 60nm GaN and 0.1㎛ GaAs pHEMT process. The output power of PA is 28 dBm at center frequency of W-band and Noise figure is 6.7 dB of switch and LNA MMIC. Output power and Noise figure of MMIC chips developed in domestic was applied to the transmitter and receiver module through W-band waveguide low loss transition structure design and impedance matching to verify the performance after the fabrication are 26.1~27.7 dBm and 7.85~10.57 dB including thermal testing, and which are close to the analysis result. As a result, these are judged that the PA and Switch and LNA MMICs can be applied to the small radar sensor.

High Speed, High Resolution CMOS Sample and Hold Circuit (고속, 고해상도 CMOS 샘플 앤 홀드 회로)

  • Kim Won-Youn;Park Kong-Soon;Park Sang-Wook;Yoon Kwang-Sub
    • Proceedings of the IEEK Conference
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    • 2004.06b
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    • pp.545-548
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    • 2004
  • The paper describes the design of high-speed, high-resolution Sample-and-Hold circuit which shows the conversion rate 80MHz and the power supply of 3.3v with 0.35um CMOS 2-poly 4-metal process for high-speed, high resolution Analog-to-Digital Converter. For improving Dynamic performance of Sample-and-Hold, Two Double bootstrap switch and high performance operational amplifier with gain booster, which are used. and For physical stability of Sample and Hold circuit, reduces excess voltage of gate in bootstrap switch. Simulation results using HSPICE shows the SFDR of 71dB, 75dB in conversion rate of 80MHz result for two inputs(0.5Vpp, 10MHz and 1Vpp, 10MHz) and the power dissipation of 48mW at single 3.3V supply voltage.

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Predicting the Effectiveness of National Energy R&D Investment in Korea: Application of System Dynamics

  • Oh, YoungMin
    • Korean System Dynamics Review
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    • v.15 no.2
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    • pp.27-50
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    • 2014
  • Korea government established the energy technology development plan (2011-2020) and declared to be a leader of the green energy technologies. The plan aims for 10% market share in the green energy industry, 12% energy efficiency improvement, and 15% greenhouse gas reduction. In order to achieve these goals, the government has tried to calculate the whole scale of national energy R&D investment, annual budget and specific expenditures for new technologies by computer simulation. The simulation modules include the R&D investment model, GDP model, energy consumption and $CO_2$ emission model by System Dynamics. Based on these simulation modules, I tested various scenarios for effectiveness of energy R&D investments until 2020. The results show that Korea should increase national energy R&D investment to 2.3 billion U.S. dollars, and switch the investment from electricity and nuclear power to the renewable energy.

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Desing of Dual-band VCO Using PBG Structure (PBG 구조를 이용한 Dual-band VCO 설계)

  • 조용기;서철헌
    • Proceedings of the IEEK Conference
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    • 2003.11c
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    • pp.64-67
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    • 2003
  • This paper presents the design of dual-band VCO using PBG structure for IEEE 802.11A/B. By adding switch circuit to the single-band VCO, we could achieve a dual-band VCO. The center frequencies of dual-band VCO are 5.93GHz(-13dBm) and 2.37GHz (3.50dBm). The phase noise is improved about l0dB by using PBG Structure.

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A 3 V 12b 100 MS/s CMOS DAC for High-Speed Communication System Applications (고속통신 시스템 응용을 위한 3 V 12b 100 MS/s CMOS D/A 변환기)

  • 배현희;이명진;신은석;이승훈;김영록
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.9
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    • pp.685-691
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    • 2003
  • This work describes a 3 V 12b 100 MS/s CMOS digital-to-analog converter (DAC) for high-speed communication system applications. The proposed DAC is composed of a unit current-cell matrix for 8 MSBs and a binary-weighted array for 4 LSBs, considering linearity, power consumption, chip area, and glitch energy. The low-glitch switch driving circuit is employed to improve the linearity and the dynamic performance. Current sources of the DAC are laid out separately from the current-cell switch matrix core. The prototype DAC is implemented in a 0.35 urn n-well single-poly quad-metal CMOS technology. The measured DNL and INL of the prototype DAC are within $\pm$0.75 LSB and $\pm$1.73 LSB, respectively, and the spurious-free dynamic range (SFDR) is 64 dB at 100 MS/s with a 10 MHz input sinewave. The DAC dissipates 91 mW at 3 V and occupies the active die area of 2.2 mm ${\times}$ 2.0 mm.

A Non-coherent IR-UWB RF Transceiver for WBAN Applications in 0.18㎛ CMOS (0.18㎛ CMOS 공정을 이용한 WBAN용 비동기식 IR-UWB RF 송수신기)

  • Park, Myung Chul;Chang, Won Il;Ha, Jong Ok;Eo, Yun Seong
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.2
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    • pp.36-44
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    • 2016
  • In this paper, an Impulse Radio-Ultra Wide band RF Transceiver for WBAN applications is implemented in $0.18{\mu}m$ CMOS technology. The designed RF transceiver support 3-5GHz UWB low band and employs OOK(On-Off Keying) modulation. The receiver employs non-coherent energy detection architecture to reduce complexity and power consumption. For the rejection of the undesired interferers and improvement of the receiver sensitivity, RF active notch filter is integrated. The VCO based transmitter employs the switch mechanism. As adapt the switch mechanism, power consumption and VCO leakage can be reduced. Also, the spectrum mask is always same at each center frequency. The measured sensitivity of the receiver is -84.1 dBm at 3.5 GHz with 1.579 Mbps. The power consumption of the transmitter and receiver are 0.3nJ/bit and 41 mW respectively.

Improving Stability and Characteristic of Circuit and Structure with the Ceramic Process Variable of Dualband Antenna Switch Module (Dual band Antenna Switch Module의 LTCC 공정변수에 따른 안정성 및 특성 개선에 관한 연구)

  • Lee Joong-Keun;Yoo Joshua;Yoo Myung-Jae;Lee Woo-Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.2 s.35
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    • pp.105-109
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    • 2005
  • A compact antenna switch module for GSM/DCS dual band applications based on multilayer low temperature co-fired ceramic (LTCC) substrate is presented. Its size is $4.5{\times}3.2{\times}0.8 mm^3$ and insertion loss is lower than 1.0 dB at Rx mode and 1.2 dB at Tx mode. To verify the stability of the developed module to the process window, each block that is diplexer, LPF's and bias circuit is measured by probing method in the variation with the thickness of ceramic layer and the correlation between each block is quantified by calculating the VSWR In the mean while, two types of bias circuits -lumped and distributed - are compared. The measurement of each block and the calculation of VSWR give good information on the behavior of full module. The reaction of diplexer to the thickness is similar to those of LPF's and bias circuit, which means good relative matching and low value of VSWR, so total insertion loss is maintained in quite wide range of the thickness of ceramic layer at both band. And lumped type bias circuit has smaller insertion itself and better correspondence with other circuit than distributed stripline structure. Evaluated ceramic module adopting lumped type bias circuit has low insertion loss and wider stability region of thickness over than 6um and this can be suitable for the mass production. Stability characterization by probing method can be applied widely to the development of ceramic modules with embedded passives in them.

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