• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.8
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• pp.52-58
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• 2008

Ths paper describes the Dual-band switch which was proposed new structure that could improved the specification of broadband and designed by the optimized structure through simulation. The Dual-band switch with 2.4[GHz]/5.8[GHz] that can apply to 802.11a/b/g system that is commercialized present was studied to get a new structure with higher power, high isolation. The transmitter of switch was designed to operate a parallel switching element with stack structure of two FET. The receiver designed to have asymmetry structure that insert series FET in addition to basic serial/parallel FET. SPDT(Single Pole Double Throw) Tx/Rx FET switch is a device that can do switching from a port of input to two port of output. The fabricated SPDT switch has the characteristic of insertion loss of a below -3[dB] form DC to 6[GHz] and the isolation of a below -30D[dB](Rx mode).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.431-434
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• 2004

The design, simulation, modeling and measurement of a RF switch module for GSM applications were presented in this paper. switch module were simulated by ADS and constructed using a LTCC multi-layer switching circuit and integrated low pass filter, designed to operate in the GSM band. Insertion and return losses at 900 MHz of the low pass filters were designed to lower than 0.3 dB and higher than 12.7 dB respectively. The switch module constructed, contained 10 embedded passives and 3 surface mounted components integrated on $4.6{\times}4.8{\times}1.2$ m volume, 6-layer integrated circuit. The insertion loss of switch module at m MHz were around 11 dB.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.10
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• pp.51-56
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• 2004

We propose and fabricate an 1${\times}$2 asymmetric optical switch by TOE using SOI wafer based on silicon which has very large TOE figure and it is a good material for optical devices. SOI wafer consists of 3 layers; upper Si layer for device(waveguide;core, n=3.5), buried oxide layer for insulator(clad, n=1.5) and Si substrate layer. We designed 1${\times}$2 asymmetric y-branched single mode optical waveguide switch by BPM simulation and metal heater by heat transfer simulation. Fabricated switch shows about 3.5 watts of power consumption and over 20dB of crosstalk between output channels.

• Journal of the Optical Society of Korea
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• v.9 no.3
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• pp.119-122
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• 2005

Silica-based $2\times2$ thermo-optic (TO) switch using the MMI couplers which have a large fabrication tolerance of 110 (${\mu}m$ were fabricated and operated. Important features of the proposed switch are shown to be a polarization dependency loss of 0.1dB, an extinction ratio of 32.7dB, and a power consumption of 202.8mW.

• IEIE Transactions on Smart Processing and Computing
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• v.5 no.3
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• pp.164-168
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• 2016

A low insertion-loss, high-isolation switch based on single pole double throw (SPDT) for a 2.4GHz Bluetooth low-energy transceiver is presented in this paper. In order to increase isolation, the body floating technique is implemented. Based on characteristics whereby the ratio of the sizes of the shunt and the series transistors significantly affect the performance of the switches, the device sizes are optimized. A simple matching network is also designed to enhance the insertion loss. Thus, the SPDT switch has high isolation and low insertion loss without increasing the complexity of the circuit. The proposed SPDT is designed and simulated in a complementary metal-oxide semiconductor 65nm process. The switch has a $530{\mu}m{\times}270{\mu}m$ area and achieves 0.9dB, 1.78dB insertion loss and 40dB, 41dB isolation of transmission, reception modes, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.5
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• pp.782-787
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• 2000

The monolithic single-pole three-throw(SP3T) GaAs PIN diode switch circuit for the broadband and high power application was designed, fabricated and characterized. To improve the power handling capability, buffer layers of the diode employ both low temperature buffer and superlattice buffer. The diode show the breakdown voltage of 65V and turn-on voltage of 1.3V. The monolithic integrated switch employed microstrip lines and backside via holes for low-inductance signal grounding. The vertical epitaxial PIN structure demonstrated better microwave performance than planar type structures due to lower parasitics and higher quality intrinsic region. As the large signal characteristics of the fabricated SP3T MMIC switch, the insertion loss was measured less than 0.6dB and the isolation better than 50dB when the input power was increased from 8dBM to 32dBm at 14.5GHz.

• Proceedings of the KIEE Conference
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• 2001.04a
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• pp.353-356
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• 2001

This paper describes an analysis of electromagnetic system of Magnetic Switch using 3D and 2D finite element method. The electromagnetic blowout force acting on the arc is obtained by 3D finite element method. So, we are researching the arc chamber for dc current using permanent magnet.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.710-713
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• 2004

The design, simulation, modeling and measurement of a low temperature co-fired ceramic (LTCC) RF switch module for GSM applications is presented in this paper. RF switch module is constructed using a Rx/Tx switching circuit and integrated low pass filter. The low pass filter function was designed to operate in th GSM band. Insertion and return loss of the low pass filter were designed less than 0.3 dB and better than 12.7 dB at 900 MHz. The RF switch module contained 10 embedded passives and 3 surface mount components integrated on $4.6{\times}4.8{\times}1.2$ nm, 6-layer multi-layer integrated circuit. The insertion loss of switch module was measured at 900 MHz was 11 dB.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.5
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• pp.185-189
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• 2005

This paper focuses on the design for Rx/Tx switch module of GSM(global standard mobile) band, characterization of a miniature, low power and dual-band implementation of the front-end switch module with low-pass filer And the effort to make agreement between the simulated design and the measured data for these solutions takes the place through accumulated design and manufacturing data library. We present the design, modeling and measurement of switch module integrating GSM Rx/Tx switching circuit and LPF(low pass filter) on a LTCC(low temperature co-fired ceramic) substrate. For GSM application, insertion and return loss of the low pass filter designed was less than 0.3 dB which was less than 12.7 dB at 900 MHz. The LTCC switch module contained 10 embedded passives and 3 surface mount components integrated on 4.6$\times$4.8$\times$1.2 mm, 6-layer multi-layer integrated circuit. The insertion loss of switch module measured at 900 MHz was 11 dB. In both of the design approach yielded excellent agreement between measured and simulated results.

• Korean Journal of Optics and Photonics
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• v.17 no.5
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• pp.469-474
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• 2006

A $1{\times}16$ thermo-optic switch with small excess loss using multimode interference(MMI) couplers is designed, fabricated, and measured. This paper introduces the proposed $1{\times}16$ thermo-optic switch, and discusses the measurement results. The $1{\times}16$ thermo-optic switch is farmed as 4-stage which consists of 15 unit devices. The unit devices are the $2{\times}2$ thermo-optic switches with Mach-Zehnder interferometer(MZI) structure. The characteristics of the $1{\times}16$ thermo-optic switch depends strongly on each unit device. The unit deviceconsists of two 3-dB general interference MMI couplers and two single mode waveguide arms as a phase shifter. First of all, the 3-dB optical splitter and $2{\times}2$ MZI thermo-optic switch have been tested to confirm the characteristics of the unit devices of the $1{\times}16$ MZI thermo-optic switch. Using the measurement results of the unit devices, the $1{\times}16$ MZI thermo-optic switch can be produced with better characteristics. The resultant structure of the MMI coupler with the optical light source of wavelength of 1550nm for the $1{\times}16$ thermo-optic switch is that the width and the optimized length are $25{\mu}m\;and\;1580{\mu}m$, respectively. The smallest excess loss fur the unit device is -0.5dB and the average excess loss is -0.7dB.