• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.5
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• pp.451-458
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• 2002

Absorptive type SP3T(Single Pole Three Throw) and SP8T switch modules over the 6-18 GHz are designed and fabricated. The epitaxial structure of GaAs PIN diode for switch modules are designed for low loss and high power capability. The maximum input power of SP3T and SP8T switch modules are 2 W and 1 W, respectively. The switching time with driver circuit is less than 130 nsec. The maximum insertion loss of SP3T switch module and SP8T module shows 2.8 dB and 4.2 dB, respectively. The isolation between input port and output port is more than 55 dB. Two switch modules for electronic warfare system have passed the environment tests of the related test items.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.167-173
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• 2005

The isolation of the series PIN diode switch is restricted by the parallel capacitance of PIN diode and the switch driver circuit limits switching speed of PIN diode switch. To overcome these problems, a high isolation and high switching speed Pin diode switch is proposed adapting the parallel resonant inductance and TTL compatible switch driver circuit. The measurement results of the 3 GHz PM diode switch show 1 GHz frequency band, less than 1.5 dB insertion loss, 65 dB isolation, more than 15 dB return loss and less than 30 ns switching speed. In particular the 3 GHz PIN diode switch using the parallel resonant inductance exhibits the improvement of isolation by 15 dB.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.2A
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• pp.201-206
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• 2006

A SPST Switch MMIC which used for Microwave Switch Matrix(MSM) of communications satellite payload with multi-beam function has been designed and fabricated. New RE FET switch configuration has been devised to improve power characteristics and isolation. Input and output return losses are better than another switches reported previously for both On and Off states. The MMIC chips were fabricated in 0.15um GaAs pHEMT process and measured insertion loss less than 2.0dB and isolation more than 63dB in the frequency range of 3GHz$\∼$4GHz. Output 3rd order interceptpoint above 32dBm has been recorded and the value is very high even though the unit pHEMT has gate width of 0.2mm and only four pHEMT are used in the MMTC.

• Journal of Sensor Science and Technology
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• v.20 no.2
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• pp.77-81
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• 2011

This paper presents a single-pole eight-throw(SP8T) switch based on proposed a radio-frequency(RF) microelectromechanical systems (MEMS) switches. The proposed switch was driven by a double stop(DS) comb drive, with a lateral resistive contact. Additionally, the proposed switch was designed to have tapered signal line and bi-directionally actuated. A forward actuation connects between signal lines and contact part, and the output becomes on-state. A reverse actuation connects between ground lines and contact part, and the output becomes off-state. The SP8T switch of 3-stage tree topology was developed based on an arrangement of the proposed RF MEMS switches. The developed SP8T switch had an actuation voltage of 12 V, an insertion loss of 1.3 dB, a return loss of 15.1 dB, and an isolation of 31.4 dB at 6 GHz.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1673-1675
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• 2004

The design, modeling and measurement of RF switch module for GSM applications is presented in this paper. RF switch module is constructed using a LTCC multi-layer switching circuit and integrated low pass filter. Insertion and return loss of the low pass filter were designed less than 0.3 dB and better than 12.7 dB at 900 MHz. The RF switch module contained 10 embedded passives and 3 surface mount components integrated on $4.6{\times}4.8{\times}1.2$ mm, 6-layer multi-layer integrated circuit. The insertion loss of switch module was measured at 900 MHz was 11 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.2 s.105
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• pp.134-138
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• 2006

The isolation performance of the S-band single-pole single-throw(SPST) monolithic microwave integrated circuit (MMIC) switch with two different RF-interconnection approaches, microstrip and grounded coplanar waveguide(GCPW) lines, are investigated. On-to-off isolation is improved by 5.8 dB with the GCPW design compared with the microstrip design and additional improvement of 6.9 dB is obtained with the coplanar wire-bond interconnection(CWBI) at a 3.4 GHz. The measured insertion loss and third-order inter-modulation distortion(IMD3) are less than 1.94 dB over $3.2{\sim}3.6\;GHz$ and greater than 64 dBc.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.10 s.101
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• pp.1003-1009
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• 2005

In this paper, small-size high-power single pole double throw(SPDT) switch with defected pound structure(DGS) is presented for wireless broadband internet application. To reduce the circuit size using slow-wave characteristic, the DGS is applied to ${\lambda}/4$ transmission line of the switch and the measured results are compared with them of conventional switch. To secure high degree of isolation, the switch with the DGS is composed of shunt-connected PIN diodes and shows insertion loss of 0.8 dB and isolation more than 50 dB at 2.3 GHz. The size of the switch is reduced about $50\%$ only with the DGS patterns while it has very similar performance to the conventional shunt-type switch.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2005.11a
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• pp.111-114
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• 2005

The isolation performance of the S-band single-pole single-throw (SPST) monolithic microwave integrated circuit (MMIC) switch with two different RF-interconnection approaches, microstrip and grounded coplanar waveguide (GCPW) lines, are investigated. On-to-off isolation is improved by 5.8 dB with the GCPW design compared with the microstrip design and additional improvement of 6.9dB is obtained with the coplanar wire-bond interconnection (CWBI) at 3.4 GHz. The measured insertion loss and third-order inter-modulation distortion (IMD3) are less than 2.43 dB over 2.5 CHz $\sim$ 4 GHz and greater than 64 dBc.

• ETRI Journal
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• v.36 no.2
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• pp.271-279
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• 2014

This paper proposes a new broadcasting system for the service-compatible 3DTV in which the 3D service can coexist with the conventional digital TV broadcast. In the proposed system, the commercial 3DTV service can be implemented via the existing DTV channel without utilizing the dedicated 3DTV system. This 2D/3D system interworks with the conventional system and can switch to 2D or 3D service according to the broadcast programming and schedule. The system also provides a mechanism that can prevent the synchronization mismatch between left and right video streams and between the stream and the associated signaling in the 2D/3D transition periods. The picture quality measurements are carried out based on the ITU-R recommended test to check the level of quality of service provided by the proposed scheme. The conformity tests are also performed with the conventional channel and the receiver for the DTV system to confirm the feasibility of the proposed one for the commercial service.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.10 s.101
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• pp.989-994
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• 2005

A MMIC(Monolithic Microwave Integrated Circuit) switch chip using InGaAs/GaAs p-HEMT process has been designed for MSM(Microwave Switch Matrix) of satellite communication system. An absorptive type MMIC switch is adopted for good reflection coefficients performances of input and output ports at both on and off states. And, a quarter wavelength impedance transformer is realized with lumped elements of MIM capacitor and spiral inductor for 3 GHz band to reduce the chip size. This MMIC switch covers the frequency range of $3.2\~3.6\;GHz$. According to the on-wafer measurement, the fabricated MMIC switch with miniature size of $1.6\;mm{\times}1.3\;mm$ demonstrates insertion loss below 2 dB and isolation above 56.8 dB, and the performance coincides with simulation results.