• The Journal of Korean Institute of Communications and Information Sciences
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• v.12 no.1
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• pp.19-26
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• 1987

The broadband microwave amplifier in the 3~4GHz frequency range has been designed by using potentially unstable GaAs FET. Input matching network is designed by 14dB available power gain circles which are in the stable region. In order to obtain maximu, transducer power gain, output matching network which is in the stable region can be designed using Fano's bandpass matching network. The measured values of transducer power gain, $S_11$and $S_22$ show close agreements with the theoretical valuse.

• ETRI Journal
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• v.35 no.3
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• pp.378-385
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• 2013

An S-band multifunction chip with a simple interface for an active phased array base station antenna for next-generation mobile communications is designed and fabricated using commercial 0.5-${\mu}m$ GaAs pHEMT technology. To reduce the cost of the module assembly and to reduce the number of chip interfaces for a compact transmit/receive module, a digital serial-to-parallel converter and an active bias circuit are integrated into the designed chip. The chip can be controlled and driven using only five interfaces. With 6-bit phase shifting and 6-bit attenuation, it provides a wideband performance employing a shunt-feedback technique for amplifiers. With a compact size of 16 $mm^2$ ($4mm{\times}4mm$), the proposed chip exhibits a gain of 26 dB, a P1dB of 12 dBm, and a noise figure of 3.5 dB over a wide frequency range of 1.8 GHz to 3.2 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.1
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• pp.20-26
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• 2003

This paper presents hairpin-comb bandpass filter using ground aperture. Hairpin-comb resonator maintains the weak coupling though the space between two resonators is very small. This has the good merit that the entire filter size is small for narrowband bandpass filter. The coupling between two hairpin-comb resonators so very weak that can't be applicable to general microstrip. We compensate the coupling by using ground aperture. It makes the hairpin-comb filter possible that can be applicable to general microstrip. Also it has the good merit which adjusts the bandwidth by changing the size of aperture without changing the space. In this paper, we fabricate the bandpass filter, which has 1.78 GHz center frequency and 62 MHz (3.5%) fractional bandwidth.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.7
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• pp.8-12
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• 1989

In this paper, dielectric waveguide gratings, which can be applied to the nonreciprocal devices such as isolators, are proposed. Those grating structures can be considered as cascade connections of step discontinuities between uniform dielectric waveguides and another uniform dielectric waveguides with a ferrite layer. Therefore, the nonreciprocal scattering characteristics of such gratings can be obtained form the scattering characteristics of step discontinuities and uniform dielectric wave guides. For the periodic grating structures, band-reject characteristics can be located inside or outside the frequency range of interest. Numerical analyses are performed at 35GHz and experimental results at X-band are also presented.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.3
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• pp.26-31
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• 2009

In this paper, we propose the receiver algorithms suitable for the ECMA standard proposed for multi-gigabit packet transmission in 60 GHz band. In the ECMA standard, various modulation schemes are used for system flexibility. Hence, it is crucial to develop receiver algorithms supporting various modulation schemes with an uniform hardware structure. In this paper, we propose the receiver algorithms supporting DBPSK, DQPSK and OOK modulation schemes simultaneously. The proposed algorithms are not only hardware efficient but also support various modulation schemes with an uniform hardware structure.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.489-493
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• 1999

In this paper, an analysis of microstrip-slotline transition is performed using a 3D vector Finite Element Method(FEM). Artificial anistropic absorber technique is employed to implement an matching boundary condition in FEM. On the base of the analysis, power divider/combiner is designed. The structure of the power combiner already developed are Branch-line coupler, Rat-race coupler, Wilkinson coupler, Lange coupler, etc. Which are all planar, If the frequency goes up, the coupling efficiency of these planar couplers is decreased on account of skin loss. Especially, in millimeter-wave band, the efficiency of more than two ways combiner is radically reduced, so that application in power amplifier circuit is almost impossible, Microstrip-slotline transition structure is a power combining technique integrated into wave-guide, so that the loss is small and the efficiency is high. Theoretically, we can mount several transistors into the power-combiner. This makes it possible to develop a high power amplifier. The numerically calculated performances of the device that is, we believe, the best are compared to the experimental results in Ka-Band(26.5GHz-40GHz).

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.1-6
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• 1989

Narrowband bandpass weveguide filters using inductive post obstacles in rectangular waveguide are designed and constructed to have an equal-ripple bandwidth of 50MHz (0.56% fractional band-width) at a center frequency of 9GHz. Both the triple-post and the single-post configurations are realized and compared. The measured center frequency, bandwidth, and attenuation characteristics for both filters show good agreement with the theoretical calculations. When the two filters are compared, the insertion loss characteristic of the triple-post filter is better than that of the single-post filter by 0.8dB at the passband.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.9
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• pp.1308-1316
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• 1989

A simplified 10-element GaAs MESFET equivalent circuit model has been presented which is suitable for the design of ultrabroad-band microwave small-signal amplification, the these circuit element values are extracted from measured S-parameters using complex-curve fitting algorithm. Packaged GaAs MESFET equivalent circuits are composed of intrinsic \ulcornermodel and several extrinsic elements at microwave frequencies, of which the largest effects are caused by package lead inductances. If these are eliminated from measured S-parameters, newly obtained S-parameters are closed to intrinsic \ulcornermodel, and the rest element values can be easily extracted. The modeling results applied to the packaged GaAs MESFET NE71083 are almost equal between the measure S-parameters and the mideled S-parameters within b 2% errors from DC to 8GHz, and errors are increased to \ulcorner% upto 12GHz wide bandwidth.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.2
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• pp.56-65
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• 1989

In this paper, a new model is presented which characterizs the coupling of the radiating edges between two rectangular microstrip patch antennas. This model, namely Radiating Edges-Coupling (REC) model, is derived from the equivalent circuit of the slitted parallel-plate waveguide filled with homogeneous dielectric. Applying the REC model to two coupled rectangular microstrip patch antennas, we obtain numerical S-parameter values of |$S_{11}$| and |$S_{12}$|for the various coupling separations, $S_e$=0.5, 1.0, 1.5, and 2.0mm. Theoretical results are in fairly good agreement with experimental results.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.12B
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• pp.1747-1753
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• 2001

This paper describe the design and fabrication of a SMD type Wilkinson power divider for PCS basestation. It has been designed for commercial power amplifier system by HP-ADS and fabricated with the size 0.56 $\times$ 0.35 inches. As a result, the power divider was well-operated in the frequency ranges of 1.75 ∼ 1.98GHz for the application of PCS system. The power divider reveals insertion loss 0.2dB, isolation -19.8dB, amplitude balance 0.02dB, phase balance 0.5o, input and output impedance matching -20.6dB respectively.