• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.706-714
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• 1998

The MgO-{{{{ { {Al }_{2 }O }_{3 } }}-{{{{ { {SiO }_{2 } }_{ } }}system containing alumina powder was fabricated sintered at various temperature and analyzed in order to study the sintering mechanism and crystallization characteristics. The specimen composed of glass powder with average particle size of 8.27 $\mu\textrm{m}$ and 0-40 vol% alumina powder were sint-ered for 3 hrs at the temperature between 850$^{\circ}C$ and 1350$^{\circ}C$ The sintering mechanism consists of the redis-tribution of particles occuring at 750$^{\circ}C$ and the viscous flow at 850∼950$^{\circ}C$. The degree of crystallization and sintering temperatue were dependent upon the ratio of glass/alumina. The second phase from the reaction between glass and alumina was not observed which was confirmed by XRD and properties analysis. The density dielectric constant and specific resistivity of specimen were 2.30∼3.26g/cm2 5.8∼7.38 at 1 GHz density dielectric constant and specific resistivity of specimen were 2.30∼3.26g/cm3 5.8∼7.38 at 1GHz and 1.23∼4.70${\times}$107 $\Omega$$.$m respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.9
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• pp.790-797
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• 2015

In this paper, We made the microwave polar transmitter based on the software to analyze the synchronization status between the phase signal and the amplitude signal of polar transmitter, and analyzed the result. In order to solve the time delay mismatch problem, we applied simplified compensation algorithm and compared the synchronization status between the two paths before and after compensation. Before compensation, the value of time delay mismatch was the maximum of 97 nsec at 9.3 GHz with the occupied bandwidth of 12 MHz, but after applying the compensation algorithm, the signals between the two paths were synchronized, and we identified the occupied bandwidth could recover to the previous 3.7 MHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.10
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• pp.1103-1108
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• 2010

This paper proposes a new type of PIFA with a capacitor structure inserted into the feeding loop. It operates in GSM900, DCS, PCS, and W-CDMA frequency bands. By inserting the capacitor, it shows the effect of lowering the return loss from -2.73 dB to -6.26 dB at the parallel frequency, 2.01 GHz. The improvement of the poor radiation property near the parallel resonance frequency leads to a broadband operation in the upper band, DCS, PCS, and W-CDMA.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.208-213
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• 2003

In this paper, we have designed the duplexer using non-radiative dielectric (NRD) guide in millimeter band. The designed duplexer is composed of two stepped-impedance filters and T-junction. Stepped-impedance filters are designed with an equivalent circuit model of evanescent waveguide and the T-junction is optimized to minimize return loss. The characteristics of duplexer shows a good agreement with the expected results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.820-825
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• 2008

A method to improve isolation characteristics of internal MIMO antenna systems for wireless portable devices operating in the $2.3{\sim}2.4$ GHz band is presented. The proposed system incorporates multiple pairs of L-slots between the two antennas in the ground plane, which operate like a band-stop filter, suppressing mutual coupling between the antennas and resulting in improved isolation. A MIMO antenna system with 6 pairs of L-slots shows reflection loss of -26.4 dB and isolation of -37.5 dB.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.6
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• pp.904-908
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• 2002

In this paper, we propose a 4-coupled ferroelectric-based meander-type microstrip-line tunable phase shifter which has less than 2dB of insertion loss (IL) and larger than 10dB of return loss (RL)over 13~170Hz .Particularly at 15GHz, the differential phase shift (DPS) is observed to be $89{\circ}$ at zero bias and it increases up to $115{\circ}$ when 150V is applied. This indicates a DPS tunability of $26{\circ}$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.6
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• pp.540-545
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• 2015

This paper presents the design, fabrication and measurement results of a S-band internally-matched power amplifier using Gallium Nitride High Electron Mobility Transistor(GaN HEMT) die. In order to fabricate the S-band internally-matched power amplifier, a high dielectric substrate and alumina were used for input/output matching circuits. The measured output power is 55.4 dBm, the drain efficiency is 78 % and the power gain is 11 dB under pulse operation at the frequency of 3 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.4
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• pp.449-456
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• 2012

Herein, we design a wideband $8{\times}8$ waveguide Butler matrix in order to use in a multi-port amplifiers(MPAs) at Ka-band. To achieve the broadband characteristic, we design a binomial 6-slot 3 dB directional coupler which is used to configure the $8{\times}8$ Butler matrix. The measured results of the fabricated $8{\times}8$ Butler matrix have low insertion loss of less than 0.3 dB, good return loss of over 26 dB and high isolation of over 35 dB within the design bandwidth of 3 GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.8
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• pp.867-880
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• 1992

In this paper, a circuit design techniques for Improving the voltage gain of the GaAs MESFET single amplifier is presented. Also, various types of existing current mirror and proposed current mirror of new configuration are compared. To obtain the high differential mode gain and low common mode gain, bootstrap gain enhancement technique Is used and common mode feedback Is employed In the design of differential amplifier. The simulation results show that designed differential amplifier has differential gain of 57.66dB, unity gain frequency of 23.25GHz. Also, differential amplifier using common mode feedback with alternative negative current mirror has CMRR of 83.S8dB, stew rate of 3500 V /\ulcorners.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.4
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• pp.484-491
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• 2008

In this paper, we design and fabricate the L-band high speed pulsed HPA using LDMOS FET. And we propose the high voltage and high speed switching circuit for LDMOS FET. The pulsed HPA using LDMOS FET is simpler than using GaAs FET because it has a high gain, high output power and sin81e voltage supply. LDMOS FET is suitable for pulsed HPA using switching method because it has $2{\sim}3$ times higher maximum drain-source voltage(65 V) than operating drain-source voltage($V_{ds}=26{\sim}28\;V$). As results of test, the output peak power is 100 W at 1.2 GHz, the rise/fall time of output RF pulse are 28.1 ns/26.6 ns at 2 us pulse width with 40 kHz PRF, respectively.