• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.4
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• pp.323-330
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• 2002

In this paper, we have designed and fabricated an BWLL MMIC amplifier using GaAs PHEMT devices. We have optimized power divider/combiner size for small size of MMIC amplifier Using 0.2 ${\mu}$m AIGaAs/lnGaAs/GaAs PHEMT devices, the two stave MMIC amplifier has demonstrated a S$_{21}$ gain of 8.7 ㏈ with input/output return losses of lower than -10 ㏈ at 26.7 GHz. The size of this chip is 4.11 ${\times}$ 2.66 $\textrm{mm}^2$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.2
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• pp.213-217
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• 2015

Microwave Photonic(MWP) filters capable of use a bandpass filter or a notch filter with large bandwidth have been proposed. 4-lines${\times}$2-bit fiber-optic delay lines with a unit time-delay difference of 50 ps were experimentally realized. By changing the time-delay difference and the coefficients of microwave-modulated optical signals, the bandpass and notch filters were implemented and characterized.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.10
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• pp.1089-1095
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• 2003

In this paper, the 26 GHz band omnidirectional antenna that produces an isotropic radiation pattern in the azimuth plane and a directive radiation pattern in the elevation plane was designed by using reflector antennas. To investigate the reliability of the designed antenna, that was analyzed by using the aperture field method and the calculated value was compared with the measured value. An good agreement was achieved between the calculated characteristics and the experimental performance. We found that the designed antenna in this paper can be used as the omnidirectional antenna with reflectors and the analysis method in this paper can be used for the analysis of this type antenna.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.10
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• pp.1567-1570
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• 2022

This paper, we presents a RF protection technique of antenna switch by improving the power handling capability in worst case environment mode for mobile phone applications without critical payment of circuit performances such as insertion loss, isolation and ACBV (AC breakdown voltage). By applying a additional capacitive path located in front of the antenna in cell-phone, it performs the effective reduction of input power in high voltage standing wave ratio (VSWR) condition. Under the all-path off condition which causes a high VSWR, it achieved 37.7dBm power handling level as high as 5.7dB compared to that of conventional one at 2GHz. In addition, insertion loss and isolation performances were 0.31dB and 42.72dB at 2 GHz, respectively which were almost similar to that of the conventional circuit. The proposed antenna switch was fabricated in 130nm CMOS SOI technology.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.1
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• pp.60-68
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• 2016

This paper presents a 6~18 GHz 7-bit digital-controlled attenuator. The proposed attenuator is based on switched-T architecture, but no inductor is used for minimum chip size. The designed attenuator was fabricated using $0.18{\mu}m$ CMOS process, and characterized using on-wafer testing setup. The resolution(minimum attenuation step) and the maximum attenuation range of the attenuator were measured to be 0.22 dB and 28 dB, respectively. The measured RMS attenuation error and the RMS phase error for 6~18 GHz were less than 0.26 dB and $3.2^{\circ}$, respectively. The reference state insertion loss was less than 12.4 dB at 6~18 GHz. The measured input and output return losses were better than 9.4 dB over all frequencies and attenuation states. The chip size is $0.11mm^2$ excluding pads.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.12
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• pp.91-96
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• 2011

In this paper, a low-power direct-conversion transmitter based on current-mode operation, which satisfies the IEEE 802.15.4 standard, is proposed and implemented in a $0.13{\mu}m$ CMOS technology. The proposed transmitter consists of DACs, LPFs, variable gain I/Q up-conversion mixer, a divide-by-two circuit with LO buffer, and a drive amplifier. By combining DAC, LPF, and variable gain I/Q up-conversion mixer with a simple current mirror configuration, the transmitter's power consumption is reduced and its linearity is improved. The drive amplifier is a cascode amplifier with gain controls and the 2.4GHz I/Q differential LO signals are generated by a divide-by-two current-mode-logic (CML) circuit with an external 4.8GHz input signal. The implemented transmitter has 30dB of gain control range, 0dBm of maximum transmit output power, 33dBc of local oscillator leakage, and 40dBc of the transmit third harmonic component. The transmitter dissipates 10.2mW from a 1.2V supply and the die area of the transmitter is $1.76mm{\times}1.26mm$.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.39-44
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• 2021

In this paper, two types of BPF(Band Pass Filter) which are hair-pin and interdigital have been designed for millimeter-wave application using two types of material which are LCP(Liquid Crystal Polymer) and PTFE(Polytetrafluoroethylene) and also, their performances such as bandwidth, insertion loss, and in-band flatness are compared. The proposed BPF are designed as third-order filters, and their pass band is from 26.5 GHz to 27.3 GHz. Interdigital BPF using PTFE substrate has most wide -3 dB S21 bandwidth of 7.8 GHz and hair-pin BPF using LCP substrate has most narrow -3 dB S21 bandwidth among the proposed four BPF. For in-band insertion loss, hair-pin BPF using PTFE substrate achieves low insertion loss better than -0.667 dB, and hair-pin BPF using LCP substrate exhibits relatively high insertion loss among the proposed four BPF better than -0.937 dB. However, the maximum difference in insertion loss performance among the proposed four BPF is 0.27 dB, which is too small to negligible. For in-band flatness, interdigital BPF using PTFE substrate shows greatest performance of 0.017 dB, and hair-pin BPF using LCP substrate exhibits the lowest performance of 0.07 dB. There are tiny difference in in-band flatness performance of 0.053 dB. As a results, it is considered that the BPF using LCP substrate can derive the performances similar to that of the BPF using PTFE substrate in Millimeter-wave band.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.11
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• pp.107-115
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• 2005

This paper presents the structure of a broadband coplanar waveguide(CPW) fed square slot antenna with a impedance bandwidth tuning patch. The designing method of the antenna suggests that two resonant frequencies are excited as a dual-frequency dipole antenna following the dimensions of the square slot. In other words, the lower resonant frequency mainly depends on the slot width and the higher one its length. A CPW fed square slot antenna with a impedance tuning patch was measured to $20GHz^\~33GHz$, $50\%$, VSWR=2 impedance bandwidth by adjusting the dimensions of the tuning patch when the slot length had $70\%$ of its width. This result shows that a medical CPW fed antenna is easily implemented with a simple square slot structure including a bandwidth tuning patch in the center.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.24 no.3
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• pp.21-26
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• 2024

Design and fabrication method of W-band 12-way radial power combiner is proposed in this paper. The proposed structure is used with TE₁₀ to TEM mode converter, which is realized using 2-step impedance transformer. The pin structure for mode converter is well bonded to the housing so that environment conditions such as vibration or shock are not affected. Proposed W-band power combiner has less than 0.7 dB insertion loss and more than 13 dB return loss from 88 GHz to 98 GHz. The measured output isolations between each other are greater than 7.5 dB from 82 to 100 GHz and phase differences are less than 10 degree from 88 to 96 GHz. Proposed power combiner is expected compact radar and various applications requiring for high power and stable environment conditions.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.11a
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• pp.44-44
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• 2004