• 센서학회지
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• 제22권6호
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• pp.379-386
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• 2013

The influences of the load resistance $R_L$ on the magnetoelectric (ME) characteristics of $NiZnFe_2O_4+PZT$ composite were investigated in the non-resonance frequency range. The ME coefficient peak increases with increasing $R_L$, but the frequency indicating the ME coefficient peak decreases with increasing $R_L$. The maximum output power peak is approximately $9.3{\times}10^{-10}mW/Oe$ near $R_L=3.3M{\Omega}$ at f=280 Hz, and the ME coefficient seems to be saturated at $R_L>20M{\Omega}$. This frequency shift effect of $R_L$ shows that the frequency range for an ME sensor application can be modulated with the appropriate value of $R_L$. The ME output voltage has a good linear response to the ac field Hac and shows fair stability over a range of temperatures. The measured non-linearity of this sample is approximately 0.8%. This sample will allow for a low-strength magnetic ac-field sensor. The result from this sample will serve as basic data for a signal-processing circuit system.

• 한국초전도ㆍ저온공학회논문지
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• 제11권3호
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• pp.10-14
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• 2009

Since a stabilizer of YBCO coated conductor (CC) plays a very important role of bypassing over-current and transferring heat generated in the moment of fault, it is one of big issues to determine the material of the stabilizer and its dimension for the high performance of the HTS power application system. Especially, in the case of a superconducting fault current limiter (SFCL), which requires it to react immediately to the occurrence of fault, characteristics of stabilizer are decisive in limiting fault current and recovering superconducting properties during and after quenching. In this paper, the quench / recovery characteristics of YBCO CCs with various thickness of stabilizer were analyzed. The quench/recovery test carried out at 20 $V_{rms}$, 5 cycles (60 Hz) and results showed that as the thickness of the stabilizer decreased, both the final approach temperature and the recovery time decreased.

• 한국공작기계학회논문집
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• 제13권3호
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• pp.53-60
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• 2004

We have developed and manufactured an experimental ultrasonic polishing machine with frequency of 20kHz at the power of vibration 1.7㎾ for effective ultrasonic polishing in processing of high hardness material. Design of the horn is performed by the FEM analysis. The following conclusions were empirically deduced through experimental results to clarify the major elements which affect the surface roughness during the ultrasonic process by following the experimental plans. The ultrasonic polishing machine has been developed in parts of structure part, ultrasonic generator, vibrator. We were able to process the high hardness material without difficulty as a result of ultrasonic polishing by utilizing the groove added step-type horn. Through analyzing by applying the experimental plans, the rotating speed of the horn was determined to be the major factor in influencing the surface roughness. In the case of ceramic, wafer, we were able to obtain good surface roughness when the feed rate and the ultrasonic output were higher. Because the load on slurry particle increases when the ultrasonic output is higher, the processed surface becomes worse in the case of optical glass.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.430-430
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• 2008

Using multi plasma enhanced chemical vapor deposition system (Multi-PECVD), p-a-Si:H deposition layer as a $p^+$ region which was annealed by laser (Q-switched fiber laser, $\lambda$ = 1064 nm) on an n-type single crystalline Si (100) plane circle wafer was prepared as new doping method for single crystalline interdigitated back contact (IBC) solar cells. As lots of earlier studies implemented, most cases dealt with the excimer (excited dimer) laserannealing or crystallization of boron with the ultraviolet wavelength range and $10^{-9}$ sec pulse duration. In this study, the Q-switched fiber laser which has higher power, longer wavelength of infrared range ($\lambda$ = 1064 nm) and longer pulse duration of $10^{-8}$ sec than excimer laser was introduced for uniformly deposited p-a-Si:H layer to be annealed and to make sheet resistance expectable as an important process for IBC solar cell $p^+$ layer on a polished n-type Si circle wafer. A $525{\mu}m$ thick n-type Si semiconductor circle wafer of (100) plane which was dipped in a buffered hydrofluoric acid solution for 30 seconds was mounted on the Multi-PECVD system for p-a-Si:H deposition layer with the ratio of $SiH_4:H_2:B_2H_6$ = 30:120:30, at $200^{\circ}C$, 50 W power, 0.2 Torr pressure for 20 minutes. 15 mm $\times$ 15 mm size laser cut samples were annealed by fiber laser with different sets of power levels and frequencies. By comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 50 mm/s of mark speed, 160 kHz of period, 21 % of power level with continuous wave mode of scanner lens showed the features of small difference of lifetime and lowering sheet resistance than before the fiber laser treatment with not much surface damages. Diode level device was made to confirm these experimental results by measuring C-V, I-V characteristics. Uniform and expectable boron doped layer can play an important role to predict the efficiency during the fabricating process of IBC solar cells.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• 조명전기설비학회논문지
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• 제20권4호
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• pp.21-28
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• 2006

본 논문에서는 Ballard사의 1.2[kW]급 연료전지와 연료전지의 저전압($28{\sim}43[VDC]$)을 승압(380([VDC])시키기 위한 풀-브리지 직류-직류 컨버터, 그리고 승압된 직류 링크전압을 교류 전압(220[VAC]), 60[Hz]으로 변환하기 위한 단상 풀-브리지 인버터로 구성된 연료전지 발전용 전력변환시스템 중 풀-브리지 고주파 절연형 영전압 영전류 스위칭 위상 천이 펄스폭 변조 직류-직류 컨버터를 제안하였다. 제안한 풀-브리지 고주파 절연형 영전압 영전류 스위칭 위상 천이 펄스폭 변조 직류-직류는 프리휠링 다이오드를 포함한 탭부 인덕터 필터를 이용하여 순환 전류를 저감시켰으며, 스위치 및 변압기의 턴-온, 턴-오프시에 오버슈트 전압이나 과도현상이 발생하지 않는다. 그리고 넓은 출력 전압 조정에도 효율을 $93{\sim}97[%]$정도 얻을 수 있으며, 출력 부하전류의 변화에 대해 거의 일정한 출력 전압 특성을 가졌다.

• 한국기계가공학회지
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• 제20권10호
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• pp.63-71
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• 2021

Using fossil fuels in existing industrial systems causes a variety of social problems. Recently, many studies have been conducted on bio-refineries, which aim to actively utilize biomass to reduce the use of fossil fuels and solve various social problems. Among them, research using microalgae as a third-generation biomass has attracted considerable attention. Microalgae use inorganic matter to produce organic matter, and cell destruction is necessary to extract useful organic materials from microalgae. The extracted organic materials are currently used in various industrial fields. Numerous cell-destruction methods exist. We have investigated cell disruption by sonication, especially its efficiency. Ultrasound is a sound wave with frequencies above 20 kHz, and destroys cells by sending high energy through a cavitation that occurs, according to the characteristics of the sound wave. The Dunaliella salina microalgae used in this study was cultured in a flat-type photobioreactor. Experiments were performed using a batch low-frequency processing device. Logistic model was applied to analyze the results of cell-destruction experiments using ultrasound. The proper conditions for the most efficient cell destruction were OD 1.4(microalgae concentration)), 54watt(output power) and 200mL(microalgae capacity).

• 한국산학기술학회논문지
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• 제21권9호
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• pp.9-16
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• 2020

무선충전 기술은 사용자가 선 없이 충전할 수 있는 편리함의 이점으로 많은 모바일 전자기기의 필수요소로 자리 잡게 되었고, 지속적인 연구 개발에 의해 다양한 무선충전 시스템이 제안되고 있다. 대표적인 무선충전 시스템으로는 송수신 코일의 배치와 충전효율의 상관관계를 고려하여, 송수신 코일을 근거리 평면에 배치한 2D 평면 코일 시스템이 주로 사용되어왔다. 최근에는 평면으로 넓은 공간을 차지하는 2D 코일시스템에 높이구배를 주어, 공간을 효율적으로 사용하기 위한 3차원 코일시스템이 제안되고 있다. 하지만, 3차원 코일시스템은 2D 코일시스템에 비해 충전효율이 낮고, 특히 송수신 코일간의 거리가 멀어질수록 전력전송 효율이 급격하게 저하되는 경향이 있다. 본 논문에서는 기존 3차원 코일시스템의 단점인 낮은 충전효율과 충전자유도를 개선하기 위해 새로운 무선충전 시스템 설계를 제안한다. 3차원 형상으로 송신코일과 수신코일을 설계하였고, 이때 송신코일 내부에 독립된 송신코일을 추가로 구성한 이중 송신코일 구조를 제안하여 전송효율과 자유도를 개선할 수 있었다. 측정실험 결과, 107 kHz 동작주파수에서 송수신 코일의 거리가 8 mm일 때 제안한 시스템의 효율은 40.10 %로 기존 코일의 최대전송효율인 20.5 %에 비해 크게 증가했다. 본 논문에서 제안한 3차원 이중송수신 코일시스템은 실제 무선충전 시스템 설계 시 다양한 디자인의 무선충전 시스템 설계 및 충전효율 개선에 기여할 것으로 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• 한국지하수토양환경학회지:지하수토양환경
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• 제20권4호
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• pp.1-7
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• 2015

The degradation of off-flavors which is 2-Methylisoborneol (2-MIB) and geosmin by means of ultrasound (US) and pulsed ultraviolet (PUV) irradiation and its combination with catalyst (wire mesh, wire mesh coated TiO₂, and TiO₂) and additive (H₂O₂) were investigated via water system. A combination treatment of TiO₂ and H₂O₂ heterogeneity with US (24 kHz) and PUV (6000 W) has shown improved results in destroying 2-MIB and geosmin, which may be attributed to chain reactions by the enhanced formation of hydroxyl radicals (·OH) through H₂O₂ dissociation and reactive oxide ions of TiO₂ addition. Rapid degradation of off-flavors occurred within 2 min under PUV process with H₂O₂ 100 mg/L (81.5% for 2- MIB; 79.3% for geosmin) and TiO₂ 100 mg/L (83.7% for 2-MIB; 79.8% for geosmin), while compared with H2O2 100 mg/L (58.4% for 2-MIB; 58.0% for geosmin) and TiO₂ 100 mg/L (59.2% for 2-MIB; 38.5% for geosmin) within 5 min under US process. Surprisingly, the emphasis was given on the comparison with the same injected energies between PUV and US on degradation efficiency. Based on the injected energy comparison, the US provided better degradation performance under equal input power of 200 kJ with H₂O₂ 100 mg/L, while compared with H₂O₂ 100 mg/L under PUV process. Our findings suggest that US can be more effective compared to PUV for the degradation of off-flavors in aspect of energy consumptions.