• Journal of Bio-Environment Control
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• v.24 no.1
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• pp.27-33
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• 2015

High temperature stress in summer season at plastic house is a limiting factor for tomato fruit set and yield. This study was performed to assess the effects of gibberellic acid ($GA_3$) and 2,4-Dichlophenoxy acetic acid (2,4-D) spray on fruit set, yield, and quality of tomato cv. 'Adoration'(Enza Zaden Co., Ltd.) under the plastic house in Hwacheon, 2011. Four concentrations (0-, 5-, 10- and $15mg{\cdot}L^{-1}$) of $GA_3$, and three concentrations (0-, 5- and $10mg{\cdot}L^{-1}$) 2,4-D were sprayed in early flowering of tomato in the plastic house, and fruit set, yield and quality characters were observed. The results showed that spray of $10mg{\cdot}L^{-1}$ $GA_3$ significantly increased the fruit set by 14.2% than unsprayed. The spray of $GA_3$ significantly increased the marketable fruit number, fruit weight, and yield. The spray of 2,4-D on blossoms significantly affected the fruit set percentage, fruit weight, marketable fruit weight and yield, and the highest fruit set observed as 62.5% in combined spray of $GA_3$ and 2,4-D at each $5mg{\cdot}L^{-1}$. Fruit size and total soluble solids significantly varied with the concentrations of $GA_3$ sprayed. The result indicates that the spray of $10mg{\cdot}L^{-1}$ $GA_3$ and $5mg{\cdot}L^{-1}$ 2,4-D can be more economic and effective to increase the fruit set, and yield in tomato under high temperature condition in plastic house.

• Korean Journal of Materials Research
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• v.30 no.12
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• pp.666-671
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• 2020

The electronic structure and magnetic properties of chalcopyrite (CH) AlGaAs2 with dopant Mn at 3.125 and 6.25 % concentrations are investigated using first-principles calculations. The CH AlGaAs2 alloy is a p-type semiconductor with a small band-gap. The AlGaAs2:Mn shows that the ferromagnetic (FM) state is the most energetically favorable one. The Mn-doped AlGaAs2 exhibits FM and strong half-metallic ground states.The spin polarized Al(Ga,Mn)As2 state (Al-rich system) is more stable than the (Al,Mn)GaAs2 state (Ga-rich system), which has a magnetic moment of 3.82mB/Mn. The interaction between Mn-3d and As-4p states at the Fermi level dominates the other states.The states at the Fermi level are mainlyAs-4p electrons, which mediate strong interaction between the Mn-3d and As-4p states. It is noticeable that the FM ordering of dopant Mn with high magnetic moment originates from the As(4p)-Mn(3d)-As(4p) hybridization, which is attributed to the partially unfilled As-4pbands. The high FM moment of Mn is due to the double-exchange mechanism mediated by valence-band holes.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.13 no.4
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• pp.360-368
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• 1988

A 14 to 14.5 GHz low noise MIC amplifier is designed on the $Al_2$$O_3$ substrate. The amplifier which uses a GaAsMESFET developed at COMSAT Laboratories has been designed and optivized to have gain greater than 7dB and noise figure less than 2dB using Super-Compact program. Experimental results show that the gain of the amplifier is 7 to 7.7 dB, while noise figure is 3.8 to 4.3dB through the desired band.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.49-54
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• 2020

We studied the electronic and magnetic properties for the Mn-doped chalcopyrite (CH) AlAs, GaAs, and AlGaAs₂ semiconductor by using the first-principles calculations. The chalcopyrite AlGaP₂, AlGaAsP, and AlGaAs₂ compounds have a semiconductor characters with a small band-gap. The interaction between Mn-3d and As-4p states at the Fermi level dominate rather than the other states. The ferromagnetic ordering of dopant Mn with high magnetic moment is induced due to the Mn(3d)-As(4p) strong coupling, which is attributed by the partially filled As-4p bands. The holes are mediated with keeping their 3d-electrons, therefore the ferromagnetic state is stabilized by this double-exchange mechanism. We noted that the ferromagnetic state with high magnetic moment is originated from the hybridized As(4p)-Mn(3d)-As(4p) interaction mediated by the holes-carrier.

• Journal of IKEEE
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• v.26 no.4
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• pp.722-727
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• 2022

In this paper, we present the design and characterization of a power amplifier (PA) monolithic microwave integrated circuit (MMIC) in the X-band. The device is designed using a 0.25 ㎛ gate length AlGaN/GaN high electron mobility transistor (HEMT) on SiC process. The developed X-band AlGaN/GaN power amplifier MMIC achieves small signal gain of over 21.6 dB and output power more than 46.11 dBm (40.83 W) in the entire band of 9 GHz to 10 GHz. Its power added efficiency (PAE) is 43.09% ~ 44.47% and the chip dimensions are 3.6 mm × 4.3 mm. The generated output power density is 2.69 W/mm². It seems that the developed AlGaN/GaN power amplifier MMIC could be applicable to various X-band radar systems operating X-band.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.9
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• pp.71-80
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• 2007

This paper presents a new push-push VCO technique that extracts a second harmonic output signal from a capacitive commonnode in a negativegm oscillator topology. The generation of the $2^{nd}$ harmonics is accounted for by the nonlinear current-voltage characteristic of the emitter-base junction diode causing; 1) significant voltage clipping and 2) different rising and falling time during the switching operation of core transistors. Comparative investigations show the technique is more power efficient in the high-frequency region that a conventional push-push technique using an emitter common node. Prototype 12GHz and 17GHz MMIC VCO were realized in GaInP/GaAs HBT technology. They have shown nominal output power of -4.3dBm and -5dBm, phase noise of -108 dBc/Hz and -110.4 dBc/Hz at 1MHz offset, respectively. The phase noise results are also equivalent to a VCO figure-of-merit of -175.8 dBc/Hz and -184.3 dBc/Hz, while dissipate 25.68mW(10.7mA/2.4V) and 13.14mW(4.38mA/3.0V), respectively.

• Journal of Life Science
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• v.25 no.4
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• pp.390-396
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• 2015

This study was carried out to investigate the action of phytohormones which influence the adventitious root formation of calli originating from the leaves of Persicaria perfoliata. The optimal medium condition for callus formation was ½-strength MS, 1% sucrose, and 4.5 μM 2,4-D. In order to determine which phytohormones had an effect on the adventitious root formation, the calluses were cultured in various media with different kinds of phytohormones. As a result, the medium with GA₃ or IAA was shown to induce root formation. To deeply investigate the effects of GA₃ and IAA, calli were cultured in 0.1, 1, and 10 mg/l levels of phytohormones. Numbers of roots formed per callus were 10.9, 14.2, 22.6 in GA₃, 5.8, 3.9, 1.1 in IAA, respectively. Therefore, the higher GA₃ or the lower IAA concentration, the more roots formed. To confirm this role of GA₃ we tested with inhibitors PBZ and NPA. GA₃ with PBZ resulted in reduction by 52.4~69.4% compared to GA₃ alone. In contrast, GA₃ with NPA resulted in an increase by -8~45.6% compared to GA₃ alone in root formation. Also, results were determined on the effect of GA₃ with other phytohormones on root formation. Kinetin, 2iP and ABA with GA₃ had a negative effect, but IAA with GA₃ showed a similar result to GA₃ alone. From these results we infer GA plays a key role and auxin has subsidiary activity on adventitious root formation. This is the first report that indicates GA₃ promotes adventitious root formation from calli in P. perfoliata.

• Applied Biological Chemistry
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• v.29 no.1
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• pp.73-77
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• 1986

Aqueous solutions of 2,4-D, BA or $GA_3(10^{-6},\;10^{-5},\;and\;10^{-4}M,\;respectively)$ were sprayed onto soybean (Glycine max) plants in the flowering stage, and proteins of immature (33days after flowering) and mature (77days after flowering) seeds were analyzed by electrophoresis to elucidate the effects of the growth reguators on protein synthesis or protein accumulation in the seeds. Accumulations of some proteins were altered by 2,4-D or BA at certain concentrations, but no proteins were affected by $GA_3$. The ${\alpha}\;and\;{\alpha}'$ subunits of 7S and acidic subunit of 11S disappeared in mature seeds after treatments at the flowering stage with 2,4-D or BA. The presence of ${\alpha}\;and\;{\alpha}'$ subunits of 7S and acidic subunit of 11S in immature seeds indicated that the absence of the above polypeptides in mature seeds did not result from inhibitions in syntheses of the polypeptides by the growth regulators. Disappearance of the above proteins in mature seeds seemed to be concerned with the action of specific proteolytic enzyme (s) (metalloendopeptidase?), and 2,4-D and BA might promote gene expression or activation of the enzyme.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.35 no.2
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• pp.165-170
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• 1990

In order to determine the relationship between dwarf gene and GA$_3$ response, three dwarf cultivars, Fukei 71, Seolak, and Tanginbozu, which were known to have d 50, d 47 and d 35 gene, respectively, were used as parents in this study. Three parents and their F$_1$ and F$_2$ generations were grown. Tillers of each plant were devided into two parts at 15 days after transplanting and was transplanted. One part of them was sprayed with GA$_3$ 50 ppm at booting stage. The internode length were measured at ripening stage in terms of GA$_3$ response. The internode was significantly elongated in Seolak and Tanginbozu, but not in Fukei 71. All F$_1$ plants of the crosses were tall, and their internode and culm were significantly elongated with the spraying of GA$_3$. Dwarf plants which are not responded to GA$_3$ were selected in the F$_2$'s of Seolak/Fukei 71 and Fukei 71/Tanginbozu crosses, and backcrossed to Fukei 71. All of these BC$_1$F$_1$ plants were uniform in the culm length and not responded to GA$_3$ treatment. The dwarf gene, d 50 of Fukei 71 seems to be closely associated with the facter of non-response to GA$_3$.

• Journal of Ginseng Research
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• v.26 no.1
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• pp.17-23
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• 2002

Gibberellic acid (GA) was applied to field-grown 3-year-old North American ginseng (Panax quinqueiolius L.) between 1 and 4 times, before and during bloom in 1999. Applications of both GA$_3$ and GA$\sub$4+7/ four times (x4) to the developing inflorescences increased maximum pedicel length, and seed head diameter and height. Treatment with GA$\sub$4+7/ increased mean and total root fresh weight linearly, whereas those treated with GA$_3$ did not show similar increases. Both GA$_3$ and GA$\sub$4+7/ at 50, 100 and 200 mg L$\^$-1/ (x4) increased the incidence of breaking of dormancy of perennating buds with GA$_3$ being twice as effective as GA$\sub$4+7/. Both GA$_3$ and GA$\sub$4+7/ treatments resulted in an increased number of new bud initials forming per root, with the number of new initials per root increased two-fold by the GA$_3$ sprays compared to GA$\sub$4+7/.