• Journal of the Institute of Electronics Engineers of Korea CI
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• v.45 no.6
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• pp.87-93
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• 2008

This paper describes implementation of the 5.0GHz RF frequency synthesizer with $0.18{\mu}m$ silicon CMOS technology being used as an application of the IEEE802.15.4 USN sensor node transceiver modules. To get good performance of speed and noise, design of the each module like VCO, prescaler, 1/N divider, fractional divider with ${\Sigma}-{\Delta}$ modulator, and common circuits of the PLL has been optimized. Especially to get good performance of speed, power consumption, and wide tuning range, N-P MOS core structure has been used in design of the VCO. The chip area including pads for testing is $1.1*0.7mm^2$, and the chip area only core for IP in SoC is $1.0*0.4mm^2$. Through comparing and analysing of the designed two kind of the frequency synthesizer, we can conclude that if we improve a litter characteristics there is no problem to use their as IPs.

• Journal of IKEEE
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• v.16 no.2
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• pp.69-75
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• 2012

In this paper, microstrip array antenna is proposed for the wireless communication of DSRC(dedicated short range communication) scheme at 5.8GHz, which works as a part of the Navigation terminal. The microstrip patches minimized from a rectangular microstrip antenna with a half wavelength are arrayed to be mounted on the narrow and long area in the top side of the navigation terminal. Besides, the array antenna can limit its own beamwidth to the driving lane and has better directivity. It is simulated to verify the validity of the proposed application. The prototype fabricated has a volume of $18{\times}40{\times}0.8mm^3$. From the measurement, it has circular polarization performance of 4dB axial ratio over 40MHz frequency band. In addition, antenna gain of 6.2dBi and 3dB beamwidth of $70^{\circ}$ at cross section of driving lane have been achieved.

• ETRI Journal
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• v.27 no.6
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• pp.685-690
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• 2005

DC and RF characteristics of $0.15{\mu}m$ GaAs power metamorphic high electron mobility transistors (MHEMT) have been investigated. The $0.15{\mu}m{\times}100{\mu}m$ MHEMT device shows a drain saturation current of 480 mA/mm, an extrinsic transconductance of 830 mS/mm, and a threshold voltage of -0.65 V. Uniformities of the threshold voltage and the maximum extrinsic transconductance across a 4-inch wafer were 8.3% and 5.1%, respectively. The obtained cut-off frequency and maximum frequency of oscillation are 141 GHz and 243 GHz, respectively. The $8{\times}50{\mu}m$ MHEMT device shows 33.2% power-added efficiency, an 18.1 dB power gain, and a 28.2 mW output power. A very low minimum noise figure of 0.79 dB and an associated gain of 10.56 dB at 26 GHz are obtained for the power MHEMT with an indium content of 53% in the InGaAs channel. This excellent noise characteristic is attributed to the drastic reduction of gate resistance by the T-shaped gate with a wide head and improved device performance. This power MHEMT technology can be used toward 77 GHz band applications.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.05a
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• pp.691-692
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• 2016

본 논문은 802.11a 무선 랜용 5.25-GHz BiCMOS 저 잡음 증폭기를 제안한다. 이러한 회로는 1볼트 전원에서 동작하며, 저 전압 전원 공급에서도 높은 전압 이득을 가지도록 설계하였다. 제안한 회로는 $0.18{\mu}m$ SiGe HBT BiCMOS로 설계되어 있다. 저 전압 및 저 전력 동작을 위해 바이어스 회로는 밴드 갭 참조 (band-gap reference circuit) 바이어스 회로를 사용하였다. 제안한 회로는 최근 발표된 연구결과에 비해 높은 전압이득, 낮은 잡음지수 및 작은 칩 크기 특성을 보였다.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.744-751
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• 1995

This paper describes a study on absorption properties of electromagnetic wave by the composition ratio of Ni-Zn ferrite. Ni-Zn ferrite was composed of 48-52mol% Fe$\_$2/O$\_$3/, 18-22mol% NiO and 26-34mol% ZnO. The sintering of the composition was carried out at 1200.deg. C for 2 hours. Through the experiments, it was found that the resonance phenomenon occured at low frequency range for high permeability and vice versa. In the case of the composition of 49mol% Fe$\_$2/O$\_$3/, 20mol% NiO and 31mol% ZnO, the bandwidth ranged from 0.35GHz to 0.95GHz with the absorption thickness of 10mm. Also, in the case of the composition 51mol% Fe$\_$2/O$\_$3/, 22mol% NiO and 27mol% ZnO, the bandwidth ranged from 0.48GHz to 1.2GHz with the absorption thickness of 6mm.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.2
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• pp.347-353
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• 2018

In this paper, we studied a design method for a band-pass waveguide filter with a modified H-type resonant iris (RI) placed in a thin transverse wall of a rectangular waveguide. The horizontal straight gap at the center of a conventional H-shaped iris is modified to a U-shaped one to increase the equivalent capacitance, and the equivalent inductance is improved by changing the vertical two straight slots into C-shaped ones. From some simulation results for the frequency response of the proposed RI, it was observed that the proposed iris was advantageous for reducing its size and having better cutoff, compared to typical H-shaped one. Equivalent inductance, capacitance, and quality factor of the proposed RI were extracted to analyze its performance. A third-order band pass filter using the proposed modified H-shaped iris was designed and, it was observed that the filter operated in the frequency range of 9.18-9.84 GHz with its insertion loss of 0.3 dB and return loss of 14 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.6
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• pp.651-659
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• 2010

In this paper, a new six-port direct conversion receiver for high-speed multi-band multi-mode wireless communication system such as software defined radio(SDR) is proposed. The designed receiver is composed of two CMOS four-port BPSK receivers and a dual-band one-stage polyphase filter for quadrature LO signal generation. The four-port BPSK receiver, implemented in 0.18 ${\mu}m$ CMOS technology for the first time in microwave-band, is composed of two active combiners, an active balun, two power detector, and an analog decoder. The proposed polyphase filter adopt type-I architecture, one-stage for reduction of the local oscillator power loss, and LC resonance structure instead of using capacitor for dual-band operation. In order to extent the operation RF bandwidth of the proposed six-port receiver, we include I/Q phase and amplitude calibration scheme in the six-port junction and the power detector. The calibration range of the phase and amplitude mismatch in the proposed calibration scheme is 8 degree and 14 dB, respectively. The validity of the designed six-port receiver is successfully demonstrated by modulating M-QAM, and M-PSK signal with 40 Msps in the two-band of 900 MHz and 2.4 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.10
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• pp.1169-1176
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• 2010

The RF front-end for L1/L2 dual-band Global Positioning System(GPS) receiver is presented in this paper. The RF front-end(down-converter) using low IF architecture consists of a wideband low noise amplifier(LNA), a current mode logic(CML) frequency divider and a I/Q down-conversion mixer with a poly-phase filter for image rejection. The current bleeding technique is used in the LNA and mixer to obtain the high gain and solve the head-room problem. The common drain feedback is adopted for low noise amplifier to achieve the wideband input matching without inductors. The fabricated RF front-end using $0.18{\mu}m$ CMOS process shows a gain of 38 dB for L1 and 41 dB for L2 band. The measured IIP3 is -29 dBm in L1 band and -33 dBm in L2 band, The input return loss is less than -10 dB from 50 MHz to 3 GHz. The measured noise figure(NF) is 3.81 dB for L1 band and 3.71 dB for L2 band. The image rejection ratio is 36.5 dB. The chip size of RF front end is $1.2{\times}1.35mm^2$.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.2A
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• pp.213-219
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• 2007

In this paper, A novel structure of frequency doubler using Phase Delay line and $90^{\circ}$ Hybrid coupler at harmonic output have been designed and implemented to improve suppression. Proposed structure of frequency doubler improve output. coupling and fundamental suppression. Active frequency doubler with band from $2.13{\sim}2.15GHz\;to\;4.26{\sim}4.3GHz$ was designed and fabricated with 10dBm input power, 0.79dB conversion gain and -55.54dBc suppression at fundamental frequency, -44.76dBc suppression at third harmonic frequency 6.42GHz and -39.18dBc suppression at fourth harmonic frequency 8.56GHz.

• Journal of electromagnetic engineering and science
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• v.2 no.1
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• pp.16-21
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• 2002

On the contrary to the progress of the electronic industry and radio communication technologies, many social problems such as EMI, due to unnecessary electromagnetic(EM) wave are serious with the increased use of EM wave. It is required that the absorbing capability of an EM wave absorber is more than 20 dB, the bandwidth of which is required from 30 MHz to 18 GHz to satisfy the international standard about an anechoic chamber for EMI/EMS measurement$^{[1]}$TEX>. However, the absorbing frequency band of the conventional EM wave absorbers satisfying more than 20 dB is very narrow, for examples, from 30 MHz to 400 MHz in ferrite tile type and from 30 MHz to 870 MHz in ferrite grid type, respectively. In this paper, we proposed and designed a new tripe absorber with broadband characteristics covering the frequency band from 30 MHz to 10 GHz by use of the equivalent material constants method (EMCM)$^{[2]~[4]}$TEX>.