• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.508-516
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• 1992

In this study, dielectric and piezoelectric properties of 0.05Pb(AlS12/3TWS11/3T)OS13T-0.95Pb(ZrS10.52TTiS10.48T)OS13T system ceramics were investigated with respect to the variations of MnOS12T and FeS12TOS13T additions amounts. The results obtained in this study are summarized as follows: 1. As the amounts of MnOS12T and FeS12TOS13T are increased, tetragonality(c/a) and apparent density were decreased but grain size was increased, also the limits of solubility were revealed because pores were formed at the amounts of 0.3wt% MnOS12T and 0.5wt% FeS12TOS13T. 2. AS the increasing of amounts of MnOS12T and FeS12TOS13T, the temperature of phase transition(TS1cT) was decreased, and pemeability had maximum value at the amount of 0.3wt% MnOS12T but were sharply decreasd for the increasing FeS12TOS13T amounts. 3. As the amounts of MnOS12T and FeS12TOS13T are increased, the electro-mechanical coupling factor(kS1pT) was decreased from 60% to 41%, 19% respectively, but mechanical quality factor(QS1mT) had maximum values 720 for amount of 0.3wt% MnOS12T and 320 the amount of 0.5wt% FeS12TOS13T.

• Journal of Dental Rehabilitation and Applied Science
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• v.37 no.4
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• pp.244-250
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• 2021

Purpose: The purpose of this study was to examine effects of culture conditions on the growth and antibacterial activity of Streptococcus salivarius K12. Materials and Methods: S. salivarius K12 was cultivated in medium containing animal and plant protein or in medium of neutral and acidic conditions. The growth of S. salivarius K12 was measured every 2 hours by a spectrophotometer. The antimicrobial activity of S. salivarius K12 against Streptococcus mutans and Porphyromonas gingivalis was investigated by the susceptibility assay using the spent culture medium. Results: the growth of S. salivarius K12 showed faster in medium containing plant protein and neutral pH condition. The antimicrobial and antifungal activity of S. salivarius K12 appeared stronger in medium containing plant protein than animal proteins. Conclusion: For application of S. salivarius K12 to bacterial oral disease, co-substances may be needed for S. salivarius K12 to colonize in the oral cavity and enhance the antimicrobial activity.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.3
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• pp.253-260
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• 1992

In this study, the dielectric, structural and electrical properties of Pb(ZnS11/3TNbS12/3T)OS13T-BaTiOS13T-PbTiOS13T system ceramics were investigated with respect to the variation of YS12TOS13T addition amount. As the YS12TOS13T addition amount is increased, the resistivity at 100$^{\circ}C$ and the resonant/antiresonant frequencies and the frequency constant are slowly increased, and the grain growth is restrained until 0.4 wt% YS12TOS13T addition amount but continuously increased with the addition amount more than 0.4 wt% YS12TOS13T. As the YS12TOS13T addition amount is increased, the density, the diffuseness of dielectric constant and the induced polarization are increased until 0.4 wt% YS12TOS13T addition.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.687-693
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• 1992

To improve dielectric, piezoelectric and temperature stability in 0.50Pb(SnS11/2TSbS11/2T)OS13T - 0.35PbTiOS13T - 0.60PbZrOS13T + 0.4[wt%]MnOS12T piezoelectric ceramics which is used for surface acoustic wave devices, CrS12TOS13T was added and the specimens were fabricated by Hot Press method, and their characteristics were measured with CrS12TOS13T addition. From the results, in the specimen added by 0.2[wt%]CrS12TOS13T, dielectric constant and mechanical quality factor were 380 and 2307, respectively, and it was suited for surface acoustic wave device and the temperature coefficient of the resonant frequency in the specimen added by 0.4[wt%]CrS12TOS13T was the least value of 74.96[ppm/$^{\circ}C$].

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.483-491
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• 1992

Plasma silicon oxynitride film has been applied as a final passivation layer for semiconductor devices, because it has high resistance to humidity and prevents from alkali ion's penetration, and has low film stress. Structure properties of plasma silicon oxynitride film have been studied experimentally by the use of FT-IR, AES, stress gauge and ellipsometry. In this experiment,Si-N bonds increase as NS12TO/(NS12TO+NHS13T) gas ratio increases. Peaks of Si-N bond, Si-H bond and N-H bond were shifted to high wavenumber according to NS12TO/(NS12TO+NHS13T) gas ratio increase. Absorption peaks of Si-H bond were decreased by furnace anneal at 90$0^{\circ}C$. The atomic composition of film represents that oxygen atoms increase as NS12TO/(NS12TO+NHS13T) gas ratio increases, to the contrary, nitrogen atoms decrease.

• Research in Plant Disease
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• v.12 no.1
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• pp.25-27
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• 2006

Rice dwarf phytoreovirus (RDV), a member of the family Reoviridae has a genome composed of 12 segmented dsRNAs designated as 51 to 512 with an increasing order of mobility in polyacrylamide gel electrophoresis (PAGE). RDV encode 12 structural and non-structural proteins, $P1{\sim}P12$ which are encoded by the $S1{\sim}S12$ segments of the dsRNA genome, respectively. In this experiment, we confirmed in situ localization of RDV particles and P12 in cytoplasm of infected rice plant. We observed specific reaction of the gold particles using virus particle and P12 protein specific antiserum with protein A-gold immunolabelling in electron microscope. It was observed that gold particles specifically react to virus particles in cytoplasm in case using the antiserum for virus particles. In the case of antiserum for P12 protein, gold particles sporadically existing on cytoplasm without existing in organelle of cytoplasm specifically. As this result, RDV P12 protein encoded by S12 located in cytoplasm.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.652-660
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• 1992

0.10Pb(SbS11/2TSnS11/2T)OS13T-0.25PbTiOS13T-0.65PbZrOS13T ceramics modified by LaS12TOS13T(1[mol%]) and MnOS12T(0-0.30[mol%]) were fabricated. The structural and pyroelectric properties with contents of MnOS12T were studied. Crystal structure of a specimen was rhombohedral type and average grain sizes were decreased with increasing the contents of MnOS12T. Relative dielectric constant and dielectric loss factor were minimum in the specimens doped 0.24[mol%]MnOS12T. (PbS10.99TLaS10.01T)[(SbS11/2TSnS11/2T) TiS10.25TZrS10.65T]OS13T specimen modified 0.24[mol%]MnOS12T showed the good pyroelectric properties and pyroelectric coefficient and voltage responsivity were 6.73x10S0-8T[C/cmS02TK], 125[V/W], respectively. Voltage responsivity was increased with decreasing the chopper frequency.

• Proceedings of the Ginseng society Conference
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• 1993.09a
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• pp.74-83
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• 1993

In an attempt toward the synthesis of the difficulty accessible ginseng saponins the four dammarane glycosides identical to the natural $ginsenosides-Rh_2,$ - F2, compound K and chikusetsusaponin - LT8 have been prepared from betulafolienetriol(=dammar-24-ene-$3{\alpha},12{\beta}\;20(S)-triol).\;3-O-{\beta}-D-Glucopyranoside$ of 20(S) - protopanaxadiol $(=ginsenoside-Rh_2)$ have been obtained by the regio - and stereoselective glycosylation of the $12-O-acetyldammar-24-ene-3{\beta},\;12{\beta},$ 20(S)-triol. The 12-ketoderivative of 20(S)-protopanaxadiol has been used as aglycon in synthesis of chikusetsusaponin - LT8. Attempted regio - and stereoselective glycosylation of the less reactive tertiary C - 20 - hydroxyl group in order to synthesize the $20-O-{\beta}-D-glucopyranoside$ of 20(S)-protopanaxadiol(=compound K) using 3, 12 - di - O - acetyldammar - 24 - ene - $3{\beta},12{\beta},20(S)$-trial as aglycon was unsuccessful. Glycosylation of 3, 12 - diketone of betulafolienetriol followed by $NaBH_4$ reduction yielded the $20-O-{\beta}-D-glucopyranoside\;of\;dammar-24-ene-3{\beta},12{\alpha},$ 20(S)-triol, the $12{\alpha}-epimer$ of 20(S) - protopanaxadiol. Moreover, a number of semisynthetic ocotillol - type glucosides, analogs of natural pseudoginsenosides, have been prepared.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.633-639
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• 1992

The physical and electrical properties of TiN/TiSiS12T contact barrier were studied. The TiN/TiSiS12T system was formed by rapid thermal anneal in NS12T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NS12T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T system depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T system occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer and TiSiS1xT layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T system was increased as the thickness of deposited Ti film increased.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.2
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• pp.170-177
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• 1992

Contact resistance and contact leakage current of the Al/TiSiS12T/Si system are investigated for NS0+T and PS0+T junctions. SALICIDE (Self Aligned Silicide) process was used to make the Al/TiSiS12T/Si system. Titanium disilicide is one of the most common silicides because of its thermal stability, ability to form selective formation and low resistivity. In this paper, RTA temperature effect and Junction implant dose effect were evaluated to characterize contact resistance and contact leakage current. The TiSiS12T contact resistance to NS0+T silicon is lower than that to PS0+T silicon, and TiSiS12T of contact leakage current to NS0+T silicon is lower than that to PS0+T silicon. Contact resistance and contact leakage current of the Al/TiSiS12T/Si system by this method were possible for VLSI application.