• 전자공학회논문지 IE
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• v.46 no.3
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• pp.1-5
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• 2009

In this paper, we study the electrical characteristics of $RuO_2$/n-GaN Schottky diodes fabricated by using electrochemical metallization. The solution for GaN Schottky electrodes of $RuO_2$ is perchloric acid($HClO_4$). Thickness of $RuO_2$ layer depend on supplied voltage and dipping time. We verified the possibility of the rectifying and non-rectifying devices' electrode which was depend on the thickness of $RuO_2$ layer.

• Journal of the Korean Ceramic Society
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• v.33 no.9
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• pp.969-976
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• 1996

RuO2 thin films were deposited on SiO2(1000 $\AA$)/Si by hot-wall Metal Organic Chemical Vapor Depositon. The crystallinity of RuO2 thin films increased with increasing deposition temperature and the preferred orienta-tion of RuO2 films converted (200) plane to (101) plane with increasing film thicknesses. Such a change in preferred orientation was influenced on the crystallographic structure and the residual stress of RuO2 thin films. The resistivity of the 2700$\AA$-thick RuO2 thin films deposted at 30$0^{\circ}C$ was 52.7$\mu$$\Omega$-cm and they could be applicable to bottom electrodes of high dielectric materials. However the resistivity of RuO2 thin films increased with decreasing film thicknesses. The grain size and the resistivity of RuO2 thin films were densified with increasing the annealing temperature and showed the decrease of resistivity.

• Korean Chemical Engineering Research
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• v.46 no.5
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• pp.898-902
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• 2008

Prepared are three types of composite supercapacitor electrode, such as electroactive polyaniline(PAN), PAN/multi-walled carbon nanotube(CNT), and $CNT/PAN/RuO_2$. Cyclic voltammetry was performed to investigate the supercapacitive properties of these electrodes in an electrolyte solution of 1.0M $H_2SO_4$. The $CNT/PAN/RuO_2$ electrode showed the highest specific capacitance at all scan rates(e.g., 441 and $392F\;g^{-1}$ at 100 and $1,000mV\;s^{-1}$, respectively). In cycle performance, however, the PAN/CNT electrode demonstrated the best capacitance retention (66%) at $10^4th$ cycle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1125-1128
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• 2002

Electrochemical capacitor made with metal oxide electrode uses rapid and reversible protonation/deprotonation of metal oxide material under the aqueous acidic solution, generally. Electrochemical stability window of aqueous electrolyte-type capacitor is narrow compared to that of organic electrolyte-type capacitor. Electrochemical characteristics of electrochemical capacitor made with metal oxide electrode and lithium cation based organic electrolyte were evaluated. Electrochemical capacitor based on $RuO_2$ electrode material and 1M $LiPF_6$ in mixed solvents of EC, DEC, and EMC has anodic and cathodic specific capacitance of 145 and 142 F/g-$RuO_2{\cdot}nH_2O$, respectively, by using cyclic voltammetry with scan rate of 2 mV/sec g-$RuO_2$ in potential range of 2.0~4.2V(Li|$Li^+$).

• Journal of Energy Engineering
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• v.24 no.2
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• pp.34-39
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• 2015

This study confirmed the characteristics of hydrogen production according to electrode materials by producing non-diaphragm alkaline water electroanalyzer that can be controlled at medium temperature to produce hydrogen. As a result of the electrochemical characteristics by electrode material ($IrO_2/Ti$, $RuO_2/Ti$, Ti), the highest efficiency was found in $RuO_2/Ti$, as a result of hydrogen production experiment by electrolyte concentration, electrolyte concentration has a tendency to be proportional to hydrogen production and the condition of 30% KOH showed the highest hydrogen production as $118.9m^3/m^3/day$. In the experiment that confirmed hydrogen production according to electrode materials, in case of combination of anode ($IrO^2/Ti$) and cathode ($RuO^2/Ti$), it was $157.55m^3/m^3/day$ that showed a higher hydrogen production by around 6.97% than that of $IrO^2/Ti$ and cathode. It is presumed that the improvement of electrochemical activation of DSA electrode increases hydrogen production and influences the improvement of durability compared to the former electrode so that it enables stable alkaline water electrolysis.

• Journal of Environmental Science International
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• v.18 no.1
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• pp.49-60
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• 2009

Fabrication and oxidants formation of 1 and 2 component metal oxide electrode, which is known to be so effective to destruct non-biodegradable organics in wastewater, were studied. Five electrode materials (Ru, Pt, Sn, Sb and Gd) were used for the 1 and 2 component electrode. The metal oxide electrode was prepared by coating the electrode material on the surface of the titanium mesh and then thermal oxidation at $500^{\circ}C$ for 1 h. The removed RhB per 2 min and unit W for one component electrode decreased in the following sequences: Ru/Ti>Sb/Ti>Pt/Ti>Gd/Ti>Sn/Ti. The concentration of oxidants generated in 1 and 2 component electrodes was in the order of: $ClO_2$> free Cl>$H_2O_2>O_3$. OH radical was not generated from in entire one and two component electrodes. RhB degradation rate and generated oxidants of the Ru-Sn=9:1 electrode was higher than that of the two component electrode. The exact relationship between the removal of RhB and the generated oxidants concentration was not obvious. However, it was assumed that electrode with high RhB decolorization had high oxidant concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.143-144
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• 2005

Recently, MIM(metal-insulator-metal) capacitor is one of the essential device for DRAM device. In this thesis, $Al_2O_3$ thin film which has a relatively high dielectric constant was deposited by ALD(atomic layer deposition) using MPTMA and $H_2O$ source. Deposition temperature of $Al_2O_3$ thin film was $200^{\circ}C$ and its thickness was 300 ${\AA}$. $RuO_2$ bottom electrode was deposited by RF-magnetron sputtering using $RuO_2$ target. The physical characteristics of $Al_2O_3$ films were investigated by AES, TEM and Ellipsometry. Electrical characteristics were analyzed by C-V and I-V measurement.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1986-1988
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• 1999

Ferroelectric lead zirconate titanate(PZT) thin films were prepared on various bottom electrodes by rf magnetron sputtering methode. The structural phase and surface morphology of the PZT thin films were largely affected by the bottom electrodes. P-E curves of PZT thin films deposited on Pt. $RuO_2$ and Ru/$RuO_2$ bottom electrode showed typical P-E hysteresis loop. The measure values of $P_r,\;E_c$ of the Ru/PZT/Ru/$RuO_2$ capacitor were $16.9{\mu}C/Cm^2$, 140kV/ cm, respectively. The Ru/PZT/Ru/$RuO_2$ capacitors were fatigue free uP to nearly $10^9$ switching cycle but Pt/PZT/Pt capacitor showed 34% degradation uP to $10^9$ switching cycle.

• Journal of the Korean Electrochemical Society
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• v.3 no.2
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• pp.76-80
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• 2000

Electrochemical oxidation of ethanol has been studied at nickel and $RuO_2-modified$ nickel electrodes in 1 M KOH using electrochemical impedance spectroscopy. Equivalent circuits have been worked out from simulation of impedance data to model oxidation of ethanol as well as the passivation of the electrode. The charge-transfer resistances for oxidation of these electrodes became smaller in the presence of ethanol than in its absence. The nickel substrate facilitated ethanol oxidation at $RuO_2-modified$ nickel electrodes. We also describe the Performance of nanosized electrocatalysts of the same composition in comparison to those of the bulk electrodes. The nanosized electrodes were obtained by electrode-positing the alloy from complexed form of these metal ions with fourth and fifth generation polyamidoamine dendrimers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.12-12
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• 2008

Ruthenium is one of the noble metals having good thermal and chemical stability, low resistivity, and relatively high work function(4.71eV). Because of these good physical, chemical, and electrical properties, Ru thin films have been extensively studied for various applications in semiconductor devices such as gate electrode for FET, capacitor electrodes for dynamic random access memories(DRAMs) with high-k dielectrics such as $Ta_2O_5$ and (Ba,Sr)$TiO_3$, and capacitor electrode for ferroelectric random access memories(FRAMs) with Pb(Zr,Ti)$O_3$. Additionally, Ru thin films have been studied for copper(Cu) seed layers for Cu electrochemical plating(ECP) in metallization process because of its good adhesion to and immiscibility with Cu. We investigated Ru thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru thin films were grown by ALD(Lucida D100, NCD Co.) using RuDi as precursor and $O_2$ gas as a reactant at 200~$350^{\circ}C$.