• Journal of the Korean Vacuum Society
• /
• v.5 no.4
• /
• pp.348-353
• /
• 1996

Rapid thermal annealing (RTA) was applied to polycrystalline CdTe thin films evaporated on CdS/ITO/glass substrate and the effect of the annealing temperatures and the atmosphere on physical properties of polycrystalline CdTe thin films and CdTe/CdS solar cell characteristics were studied. Results obtained by EDX showed that the bulk composition of CdTe remained stoichiometric after annealing at $550^{\circ}C$ in the air but the surface composition became Cd-rich. Cross-sectional TEM and micro EDX showed that columnar grains and micro-twins remained even after RTA, however, and the sulfur content in the annealed CdTe (added by sulfur diffusion from CdS during the annealing) was much smaller than that by furnace annealing. Among the investigated RTA temperatures and gas environments, the cell made with CdTe annealed at $550^{\circ}C$ in air showed the best solar energy conversion efficiency.

• Journal of the Society of Cosmetic Scientists of Korea
• /
• v.18 no.1
• /
• pp.1-41
• /
• 1992

A new and unique class of nonionic surfactants was synthesized by reacting biological a-tocopherol with ethylene oxide for functional cosmetics. The structures were confirmed by Hl-UMR, FT-lR, TLC and elemental analysis. POV and conjugated diene value study for EPO showed POE(n)TE had antioxidative effect similar to tocopheryl acetate Protective effect on cell membrane in photohemolysis of POE(5)TE, POE(10)TE and POE(18)TE were slightly lower than tocopherol but higher than nonoxynol-12, and POE(10)TE had UV absorption power comparable with tocopherol and homosalate. Biological activity of the hydrophobic group of the new surfactants make them unique and different from those of conventional nonionic surfactants Systematic safety evaluations of POE(n)TEs on the skin and eye proved that they are as safe as tocopherol. The results of physicochemical study showed POE(10)TE had the lowest CMC value, POE(18)TE had the maximum surface tension reduction and the highest foam volume and POE(n)TEs had various HLB values by the degree of ethoxylation. The test resul Is of technological and practical applications of these surfactants for cosmetics showed some POE(n)TEs were superior to conventional surfactants. POE(5)TE in W/O emulsions, POE(10)TE and POE(12)TE in O/W emulsions, POE(12)TE in dispersions, POE(18)TE in solubilizations and POE(50)TE in gelations were shown to be excellent which was considered due to the structural characteristic and formation of liquid crystals of POE(n)TEs. By the development and applications of these excel lent multi-functional surfactants, innovative functional cosmetics were successfully formulated.

• Nuclear Engineering and Technology
• /
• v.55 no.8
• /
• pp.3080-3087
• /
• 2023

Thermoelectric (TE) materials working in radioisotope thermoelectric generators are irradiated by neutrons throughout its service; thus, investigating the neutron irradiation stability of TE devices is necessary. Herein, the influence of neutron irradiation with fluences of 4.56 × 10¹⁰ and 1 × 10¹³ n/cm² by pulsed neutron reactor on the electrical and thermal transport properties of n-type Bi₂Te_2.7Se_0.3 and p-type Bi_0.5Sb_1.5Te₃ thermoelectric alloys prepared by cold-pressing and molding is investigated. After neutron irradiation, the properties of thermoelectric materials fluctuate, which is related to the material type and irradiation fluence. Different from p-type thermoelectric materials, neutron irradiation has a positive effect on n-type Bi₂Te_2.7Se_0.3 materials. This result might be due to the increase of carrier mobility and the optimization of electrical conductivity. Afterward, the effects of p-type and n-type TE devices with different treatments on the output performance of TE devices are further discussed. The positive and negative effects caused by irradiation can cancel each other to a certain extent. For TE devices paired with p-type Bi_0.5Sb_1.5Te₃ and n-type Bi₂Te_2.7Se_0.3 thermoelectric legs, the generated power and conversion efficiency are stable after neutron irradiation.

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.5
• /
• pp.257-261
• /
• 2014

Multilayered CdTe/PSS films were prepared by the electrostatic self-assembly method in an aqueous medium. Positively-charged cadmium telluride (CdTe) nanoparticles and anionic polyelectrolyte, poly (sodium 4-styrene sulfonate) (PSS) were assembled alternately in order to build up a multilayered film structure. A linear proportion of absorbance to the number of bilayers suggests that an equal amount of CdTe was adsorbed after each dipping cycle, which resulted in the buildup of a homogenous film. The binding energies of elements (Cd and Te) in multilayered CdTe/PSS film shifted from those of the CdTe nanoparticles in the pure state. This result indicates that the interfacial electron densities were redistributed by the strong electrostatic interaction between the oppositely-charged CdTe and PSS. Electrochemical properties of the multilayered CdTe/PSS films were studied in detail by cyclic voltammetry (CV).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.233-233
• /
• 2012

위상절연체(Bi2Te3)와의 격자상수 불일치 비율이 서로 다른 Si (111)와 Ge (111) 기판을 선택하여 Bi3Te3 박막의 성장 조건을 찾고 이에 따른 특성 분석을 수행하였다. 시료 제작은 초고진공 분위기에서 MBE를 이용하였고, AFM, XRD와 XPS로 각각 구조적 변화, 결정 상태 및 화학적 상태를 분석하였다. 우선 Si 위에 형성된 Bi2Te3의 경우, 초기 박막이 형성된 후, 증착 시간이 증가함에 따라 섬(island)모양의 구조물들이 step edge 부분에 분포되는 모습을 AFM 이미지에서 확인하였다. 형성된 박막의 스텝 단차는 약 1 nm 또는 이 값의 정수 배였고, 이것은 Bi2Te3 unit cell의 quintuple layer (QL) 값과 일치하였다. 또한 측정된 XRD pattern으로 Bi2Te3가 hexagonal 구조의 c-축에 따라 결정성이 이루어졌음을 확인할 수 있었다. XPS 스펙트럼에서는 Bi 4f가 높은 에너지 방향으로 2.3 eV, Te 3d는 낮은 에너지 방향으로 약 0.7 eV 만큼 구속 에너지의 화학적 이동이 나타남을 알 수 있었다. 이러한 결과는 Si 위에 Bi2Te3 박막이 높은 결정성을 가지고 형성되었다는 것을 의미한다. 또한 Si (111) 기판보다 Bi2Te3 결정과 격자상수 불일치의 비율이 상대적으로 작은 Ge (111)을 기판으로 하여 Bi2Te3 박막을 성장시켜 두 표면에서의 박막 성장의 특성을 비교, 논의할 것이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.451-451
• /
• 2009

CdTe는 에너지밴드갭이 1.45eV인 직접천이헝 II-VI 화합물 반도체로서 높은 광홉수율과 가시광 영역의 에너지밴드캡으로 태양전지, x-선 검출기 등에 널리 사용되고 있다. 본 연구에서는 Metal Organic Chemical Vapor Deposition (MOCVD)으로 Si 기판위에 CdTe 에피 박막을 성장 하고자 하였다. Cd, Te의 금속유기 화합물로는 Dimethylcadmium(DmCd)과 Diisopropyltellurium(DIPTe)을 사용하였다. 기판으로는 Si 을 사용하였으며 박막성장 온도를 $360^{\circ}C\;{\sim}\;500^{\circ}C$로 제어하여 에피박막이 형성되는 조건을 얻고자 하였다. $360^{\circ}C$, $450^{\circ}C$에서 성장된 CdTe박막은 다양한 방향이 존재하는 다결정 구조 였으며 $500^{\circ}C$의 경우 단결정 에피 박막 성장이 이루어졌음을 확인하였다. 본 연구를 통한 CdTe 에피박막은 기존의 열증착 등으로 제조되는 다결정 CdTe 박막과 비교하여 높은 에너지변환 효율을 얻을 것으로 기대된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.3
• /
• pp.144-147
• /
• 2017

In this study, $Ge_2Sb_2Te_5$ and $Ge_8Sb_2Te_{11}$ were used as an insulator layer to fabricate ReRAM devices. The resistance change is correlated to the appearance or disappearance of a conductivity filament at the surface of the GeSbTe layer. Changes in the electrical properties of ITO/GeSbTe/Ag devices were measured using a I-V-L measurement system. As a result, compared to the $ITO/Ge_8Sb_2Te_{11}/Ag$ device, this $ITO/Ge_2Sb_2Te_5/Ag$ ReRAM device exhibits highly uniform bipolar resistive switching characteristics, such as the operating voltages, and the resistance values.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.3
• /
• pp.185-191
• /
• 2017

Cadmium compounds with one dimension (1D) nanostructures have attracted attention for their excellent electrical and optical properties. In this study, vertically aligned CdTe-Si nanostructures with high density were synthesized by several simple chemical reactions. First, l D Te nanostructures were synthesized by silver assisted chemical Si wafer etching followed by a galvanic displacement reaction of the etched Si nanowires. Nanowire length was controlled from 1 to $25{\mu}m$ by adjusting etching time. The Si nanowire galvanic displacement reaction in $HTeO_2{^+}$ electrolyte created hybrid 1D Te-branched Si nanostructures. The sequential topochemical reaction resulted in $Ag_2Te-Si$ nanostructures, and the cation exchange reaction with the hybrid 1D Te-branched Si nanostructures resulted in CdTe-Si nanostructures. Wet chemical processes including metal assisted etching, galvanic displacement, topochemical and cation exchange reactions are proposed as simple routes to fabricate large scale, vertically aligned CdTe-Si hybrid nanostructures with high density.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.58 no.6
• /
• pp.1146-1150
• /
• 2009

Cadmium telluride (CdTe) is one of the most attractive photovoltaic materials due to its low cost, high efficiency and stable performance in physical, optical and electronic properties. Few researches on the influences of uniform surface on the photovoltaic characteristics in large-area CdTe solar cell were not reported. As the preceding study of the effects of thickness-uniformity on the photovoltaic characteristics for the large-area CdTe thin film solar cell, chemical mechanical polishing (CMP) process was investigated for an enhancement of thickness-uniformity. Removal rate of CdTe thin film was 3160 nm/min of the maximum value at the 200 $gf/cm^2$ of down force (pressure) and 60 rpm of table speed (velocity). The removal rate of CdTe thin film was more affected by the down force than the table speed which is the two main factors directly influencing on the removal rate in CMP process. RMS roughness and peak-to-valley roughness of CdTe thin film after CMP process were improved to 96.68% and 85.55%, respectively. The optimum process condition was estimated by 100 $gf/cm^2$ of down force and 60 rpm of table speed with the consideration of good removal uniformity about 5.0% as well as excellent surface roughness for the large-area CdTe solar cell.

• Journal of Powder Materials
• /
• v.3 no.4
• /
• pp.246-252
• /
• 1996

$Bi_{2}Te_{3}-Sb_{2}Te_{3}$, $Bi_{2}Te_{3}-Bi_{2}Se_{3}$ solid solutions are of great interest as materials for thermoelectric energy conversion. One of the key technologies to ensure the efficiency of thermoelectric device is to obtain chemically homogeneous solid solutions. In this work, the new process with rapid solidification followed by hot pressing was investigated to produce homogeneous thermoelectric materials. Characteristics of the materials were examined with XRD, SEM, EPMA-line scan and bending test. Property variations of the materials were investigated as a function of variables, such as excess Te quantity and hot pressing temperature. Quenched ribbons are very brittle and consisted of homogeneous $Bi_{2}Te_{3}$, $Sb_{2}Te_{3}$ solid solutions. When the process parameters were optimized, the maximum figure of merit was 3.073$\times$$10^{-3}K^{-4}$. The bending strength of the material, hot pressed at 45$0^{\circ}C$, was 5.87 kgf/${mm}^2$.