• Journal of the Korean Ceramic Society
• /
• v.39 no.10
• /
• pp.1001-1006
• /
• 2002

Bond strength of $SrZrO_3$ resistive oxide barrier on Ag sheathed Bi(2223) tapes prepared by the sol-gel and dip-coating method was evaluated with an aid of Taguchi method and $L_18(2^1{\times}3^7)$ orthogonal arrays to determine the optimal process combination of levels of factors that best satisfy the bigger is better quality characteristic. The observed optimal condition is as follows: Sr/Zr mol ratio(0.3/0.7), amount of organic vehicle(5 wt%), drying temperature and time(160${\circ}C$, 10 min), heat treatment temperature and time(500${\circ}C$, 20 min), respectively. ANOVA analysis suggested that the influence of the factors within ${\alpha}$=0.1 was significant with a 90% confidence level.

• Journal of Soil and Groundwater Environment
• /
• v.10 no.3
• /
• pp.9-15
• /
• 2005

Soil aquifer treatment is a water reuse technology that secondary or tertiary treated wastewater is infiltrated into the aquifer in which physical and biochemical reactions occur. Major consideration in SAT is the removal and transport of DOC and nitrogen species. In this study, reaction mechanism in SAT was examined considering nitrification, denitrification and organic oxidation. In addition, SAT modeling system was developed as the reaction mechanism was applied to groundwater flow and transport model. In verification of the reaction module by 1-dimensional unsaturated soil column test, the experimental data of all of the species, ammonium, nitrate, DOC and DO, were well matched with the simulation results. In sensitivity analysis, ammonium partition coefficient, dissolved oxygen inhibition constant and biomass decay rate affect ammonium, DOC and DO concentration of effluent, respectively.

• Journal of the Korean Magnetics Society
• /
• v.15 no.4
• /
• pp.226-230
• /
• 2005

In this research, magnetic properties and annealing effects of the spin valve structures were investigated, which have Ta underlayer deposited with Ar and $N_2$ gas mixture. Also, TaN underlayer as a diffusion barrier and the substrate were investigated. The structure of the spin valve was Si($SiO_2$)/Ta(TaN)/NiFe/CoFe/Cu/CoFe/FeMn/Ta. Deposition rate was decreased and resistivity and roughness of the TaN films were increased as the $N_2$ gas flow was increased. The XRD results after high temperature annealing showed that Silicides were created in Si/Ta layer, but not in Si/TaN layer. Magnetoresistance ratio (MR) and exchange coupling field ($H_{ex}$) were decreased when the $N_2$ gas flow was increased over 4.0 sccm. The MR of the spin valves with Ta and TaN films deposited with up to 4.0 sccm of $N_2$ gas flow was increased about $0.5\%$ until the annealing temperature of up to $200^{\circ}C$ and then, decreased. TaN film deposited with 8.0 sccm of $N_2$ gas flow showed twice the adhesion of the Ta film. The above results indicate that with 3.0 sccm of $N_2$ gas flow during the Ta underlayer deposition, the magnetic properties of the spin valves are maintained, while the underlayer may be used as a diffusion barrier and the adhesion between the Si substrate and the underlayer is increased.

• KSBB Journal
• /
• v.16 no.5
• /
• pp.442-445
• /
• 2001

Catechin compounds as anticancer and antioxidant were target materials from Korean Green Tea in this work. The methodologies of solvent extraction and partition were utilized to recover catechin compounds from green tea and the optimal experimental conditions were found by comparing the degree of recovery as slovent. extraction times and operating temperatures. The extract was partitioned with chloroform, which was best fit to remove caffeine after the extraction of green tea with 80$^{\circ}C$ water for 40 min. Further, the resulting extract was partitioned in ethyl acetate layer to purify the catechin compounds of EGC, EC EGCG and ECG. This experimental result could be extended to preparative HPLC to obtain EGCG on a commercial scale.

• Proceedings of the Korean Society of Disaster Information Conference
• /
• 2016.11a
• /
• pp.271-274
• /
• 2016

본 논문에서는 오존층 파괴 및 지구 온난화에 악영향을 미치는 할로겐화합물 소화약제를 대체하여 개발된 청정소화약제인 할로겐화합물 청정소화약제(Halocarbon clean agent)의 열분해 생성물(thermal decomposition products)의 영향에 평가하고자 한다. 이를 위해 할로겐화합물 청정소화약제인 HFC-125가 화원 크기의 변화에 따른 열분해 생성물의 미치는 영향을 측정하기 위해 소화시험을 실시하였고 금속(철), 비철금속(구리), 유리 시편의 부식성과 전자부품(SD-Card) 작동여부를 평가 하였다. 금속 및 비철금속 시편의 부식성을 측정하기 위해 디지털 카메라를 통해 이미지를 촬영하고 그래픽 편집 소프트웨어를 이용하여 채도(saturation)를 측정하여 부식성의 정도를 분석하였다. 금속, 비철금소, 유리 시편의 부식성 분석 결과, 화원의 크기가 증가할수록 금속 및 비철금속의 부식성이 증가하였다. 즉, 화원의 크기(fire size)에 따라 열분해 생성물질도 증가하여 금속 및 비철금속의 부식을 증가시키는 것으로 사료된다.

• Journal of the Korean Chemical Society
• /
• v.48 no.5
• /
• pp.504-509
• /
• 2004

The reaction of Cu metal with mixed alkali metal polyselenide flux ($KNaSe_x$) produced large plate-like crystals of $KCu_4Se_3$. The structure of $KCu_4Se_3$, determined with X-ray single crystal diffraction techniques, is tetragonal (P4/mmm, a=4.013(1))${\AA}$, c=9.712(1))${\AA}$, z=1, R=6.7%). The structure is composed $[Cu_4Se_3]_n^{n-}$double layers which are made of fused anti PbO-type Cu2Se2 layers. Temperature variable resistivity measurement on single crystal of $KCu_4Se_3$ shows metallic behavior ranging from $1.8{\times}10^{-4}{\Omega}{\cdot}cm$ (at 300 K) to $1.0{\times}10^{-6}{\Omega}{\cdot}cm$ (at 20 K).

• Proceedings of the Korea Society for Energy Engineering kosee Conference
• /
• 2002.05a
• /
• pp.215-218
• /
• 2002

대기로 배출되는 휘발성 유기화합물 중의 하나인 TCE (Trichroloethylene)를 제거하는 기술들은 설치비 및 운전비가 많이 요구되는 흡착, 응축, 소각기술 들이 있으며, 이를 대체하는 신기술로 광촉매 반응을 이용함으로서 유기휘발물을 상온과 상압에서 광반응시켜 제거함으로서, 설치 및 조업비 측면에서 경제적인 이점이 있다.(중략)

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1996.05a
• /
• pp.51-51
• /
• 1996

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2006.10a
• /
• pp.75-75
• /
• 2006

• Journal of the Microelectronics and Packaging Society
• /
• v.11 no.3 s.32
• /
• pp.37-45
• /
• 2004

Electroless Ni(P) has been widely used for under bump metallization (UBM) of flip chip and surface finish layer in microelectronic packaging because of its excellent solderability, corrosion resistance, uniformity, selective deposition without photo-lithography, and also good diffusion barrier. However, the brittle fracture at solder joints and the spatting of intermetallic compound (IMC) associated with electroless Ni(P) are critical issues for its successful applications. In the present study, the mechanism of IMC spatting and microstructure change of the Ni(P) film were investigated with varying P content in the Ni(P) film (4.6,9, and $13 wt.\%$P). A reaction between Sn penetrated through the channels among $Ni_3Sn_4$ IMCs and the P-rich layer ($Ni_3P$) of the Ni(P) film formed a $Ni_3SnP$ layer. Thickening of the $Ni_3SnP$ layer led to $Ni_3Sn_4$ spatting. After $Ni_3Sn_4$ spatting, the Ni(P) film directly contacted the molten solder and the $Ni_3P$ phase further transformed into a $Ni_2P$ phase. During the crystallization process, some cracks formed in the Ni(P) film to release tensile stress accumulated from volume shrinkage of the film.