• Korean Journal of Food Science and Technology
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• v.49 no.5
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• pp.507-512
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• 2017

The physicochemical properties of maize starch sonicated at various amplitudes (100, 200, and 300 W) and times (10, 30, and 50 min) were examined. The amount of enzyme-susceptible starch increased marginally after sonication. Sonication increased the amount of oil absorbed in the starch although the degree of oil absorption decreased with an extension of the sonication time, implied that different types and extent of damages occurred. Scanning electron microscopy revealed that ultrasound sonication did not form pores on the surfaces, but caused damages such as depression and erosion. Pasting viscosity of starch decreased with an increase in the severity of sonication conditions because of the weakened polymer network. X-ray diffraction suggested that the crystalline domains in starch were not susceptible to sonication and were more resistance to degradation. Sonicated starch formed more pin-holes on the surfaces in the initial glucoamylase reaction; subsequently, as the reaction proceeded, porous starch with enlarged pores was formed and finally, disrupted granular fragments were observed.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.100-105
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• 2011

Simulations were performed using Crystal TRIM software under the same conditions used by previous researchers in order to clarify the mechanism that determines sheet resistance various doses, energies and beam currents. The results showed that the peak of the depth profile (Rp) in the same sample gradually shifts inward and damage increases near the surface as the energy increases for $As^+$ equal dose of $1{\times}10^{15}/cm^2$ implanted into Si(100) energies of 5, 10, and 15 keV. From a theoretical calculation of B+ ion implantation processes at energy of 20 keV using parameters that correspond to 1 mA and 7 mA beam currents with the same dose of $5{\times}10^{15}/cm^2$, it was found that the higher beam currents resulted in more damage near the surface (<100 nm). Likewise, In the simulations employing sets of doses ($1{\times}10^{15}$, $3{\times}10^{15}/cm^2$) and beam currents (0.8 mA, 8 mA), more damage was produced at larger doses and higher current. Thus, sheet resistance at the surface was reduced by the intensified damage from increases in beam energy, dose and beam currents.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2010.04a
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• pp.347-351
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• 2010

판과 같은 구조물의 손상 감지를 위해, 손상 전 구조물의 임피던스 신호를 기저신호(Baseline impedance signal)로 이용하여 직접적으로 비교하지 않는 새로운 개념의 무기저 손상진단 기법(Reference-free impedance method)을 제시한다. 박막 압전소자(이하 PZT)를 판의 상하 표면에 부착시킨 한 쌍의 병치 PZT를 이용하여 손상으로 인해 모드변환을 일으키는 전기역학적 신호(Electro Mechanical Signatures ; 이하 EMS)를 추출한다. 이 연구에서는 스펙트럼 요소법(Spectral Element Method ; 이하 SEM)을 이용하여 주파수 영역에서 병치된 PZT의 EMS를 파악하기 위한 수치해석을 수행한다. 특히, 손상에 의해 발생된 모드변환 EMSMC를 병치된 PZT의 극성에 기인한 신호분해 기법을 적용하여 추출하고, 분해된 모드변환 EMSMC가 손상의 위치와 크기에 따라 받는 영향을 추가로 분석한다.

• Proceedings of the Korea Concrete Institute Conference
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• 2008.11a
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• pp.433-436
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• 2008

Deterioration in the concrete structure are due to carbonation, chloride ion attack and frost attack. Therefore, concrete structure is needed to surface protection for increase durability using silicate impregnants. Thus, this study is concerned with self-cleaning and durability of silicate hydrophilic impregnants of concrete structure using lithium and potassium silicates. From the experimental test results, lithium and potassium silicates have a good properties as a carbonation resistance. Lithium and potassium silicates make good use of hydrophilic impregnants of concrete structures.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.323-326
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• 1998

본 연구는 boron-doped 실리콘 기판에 heavy 인온인 비소를 먼저 이온 주입시키고 비소의 주입에 의해 실리콘 표면이 손상된 영역에 다시 인을 이온 주입시켰을때, 인의 확산을 관찰하기 위해 microtec 시뮬레이터를 통해 모의공정실험을 실행하였다. 손상된 비정질의 실리콘 기판에서 열처리 전과 inet(N/sub 2/) 분위기에서 인은 느리게 확산을 하였다. 그렇지만 dry와 wt oxidation 열처리 분위기에서는 의의 확산 속도가 증가됨 (OED:oxidation-enhanced idfusion)을 관찰되었다. 실리콘 기판에서 인의 확산을 관찰하기 위해 ICECREM 시뮬레이터를 사용하여 앞의 경우와 동일하게 먼저 비소를 주입하여 실리콘 표면에 손상을 입히고 그 다음 공정에서 인을 주입하였을 때, 열처리 전과 inet, dry 산화분위기에서는 비정질의 실리콘 기판에 이온 주입한 경우와 동일하게 의의 확산 속도가 증가하였지만, wet 산화분위기에서는 오히려 dry 산화분위기에서 보다 확산이 늦어짐이 관찰되었다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.261-261
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• 2015

최근 에너지 산업에서 발생되는 대형사고의 원인은 소재의 복합적인 부식손상에 의한 것으로 구조물을 안정적으로 보호할 수 있는 고도의 방식설계기술 및 유지관리가 시급한 실정이다. 안정적인 에너지 자원공급과 환경오염을 방지하기 위해서는 사고원인에 대한 정밀검토를 실시하고 실제 환경을 고려한 적극적인 보호조치를 구축하여야 한다. 본 연구에서는 해양구조물의 부식방지를 위한 방식시스템의 설계 최적화를 목표로, 해양환경 및 시스템 설계조건을 고려하여 방식성능을 평가하였다. 또한 이론 및 해석적 검토로 충족할 수 없는 비선형 물리현상을 만족시키기 위하여 실제 환경에서의 데이터를 활용한 시간 의존적 손상거동을 모델링함으로써 구조물의 유지보수 시기를 예측하고자 하였다.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.91-95
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• 2012

본 연구에서는 열충격 시험을 통하여 Cell레벨에서의 효율저하 특성을 분석하였다. 열충격 시험은 PV모듈의 시험 규격인 KS C IEC-61215를 이용하여 보다 가혹한 조건인 $-40^{\circ}C$에서 $120^{\circ}C$의 조건으로 500사이클 수행하였다. I-V 측정을 통하여 효율을 분석한 결과, 열충격 시험 전 13.9%에서 열충격 시험 후 11.0%로 효율이 저하 됐으며, 감소율은 20.9% 나타났다.EL촬영을 통해 표면을 분석한 결과 Ribbon접합부 및 Gridfinger의 손상으로 확인 됐으며, 보다 정확한 효율 저하의 원인을 분석하기 위해 단면분석을 실시한 결과 표면손상으로 확인 되었던 위치의 Cell내부에서도 Crack을 확인 할 수 있었다. 또한 FF값을 분석한 결과 열충격 시험 전 72.3%에서 시험 후 62.0%로 11.8%의 감소율을 보였다. 따라서, 경년 시 나타나는 효율저하는 Cell자체의 소모전력 증가와 외부환경에 의한 표면 손상 및 Cell내부의 Crack에 기인하여 가속된다고 판단된다.

• Clinical and Experimental Pediatrics
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• v.49 no.2
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• pp.198-202
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• 2006

Purpose : Fas is a cell surface receptor that transduces apoptotic death signals. Interaction of extracelluar domain of Fas with Fas ligand(FasL) triggers the apoptotic process in many diseases. We investigated the expression of Fas and FasL in the hippocampus of 7-day-old newborn rat brains following hypoxia-ischemia injury. Methods : The 7-days-old newborn rats were exposed to 8 percent oxygen for two hours after the ligation of right common carotid arteries. The newborn rats were killed and their brains were removed at 12, 14 and 48 hours after hypoxic-ischemic injury. The expressions of Fas and FasL of the right hippocampus were observed by western blotting and immunofluorescent staining. Results : Fas and FasL were strongly expressed in the right hippocampus ipsilateral to the ligation of the common carotid artery by western blotting at 12 hours following hypoxic-ischemic injury, and then slowly decreased. The immunofluorescent expressions of Fas and FasL strongly increased in the CA1 area of the right hippocampus at 12 and 24 hours following hypoxic-ischemic injury. The immunofluorescent expression of Fas decreased at 48 hours, but the expression of FasL persisted strongly at 48 hours following hypoxic-ischemic injury. Conclusion : The interaction of Fas with FasL on the cell surface may be involved in neuronal injury following hypoxic-ischemic injury in the developing brain.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.63-67
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• 2008

3D integration technology has been a major focus of the next generation of IC industries. In this study Si wafer ultra-thinning has been investigated especially for the effect of ultra-thinning on the silicon surface. Wafers were grinded down to $30{\mu}m\;or\;50{\mu}m$ thickness and then grinded only samples were compared with surface treated samples in terms of surface roughness, surface damages, and hardness. Dry polishing or wet etching treatment has been applied as a surface treatment. Surface treated samples definitely showed much less surface damages and better roughness. However, ultra-thinned Si samples have the almost same hardness as a bulk Si wafer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.2
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• pp.45-50
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• 2005

During oxidation process, several type of defects are formed on the surface of the silicon crystal which was damaged mechanically before oxidation. As the size of abrasive particle increases multiple dislocation loops are produced favorably over oxidation-induced stacking faults, which are dominantly produced when ground with finer abrasive particle. These defects are not related with the crystal growth process like Czochralski or directional solidification. During directional solidification process, twins and stacking faults are the two major defects observed in the bulk of the silicon crystal. On the other hand, slip dislocations produced by the thermal stress are not observed. Thus, not only in single crystalline silicon crystal but also in multi-crystalline silicon, extrinsic gettering process with programmed production of surface defects might be highly applicable to silicon wafers for purification.