• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.301-304
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• 2007

다결정 태양전지의 원료인 폴리실리콘을 생산하는 방법 중 하나인 지멘스 방법에서 사용되는 실리콘 코어로드를 금속 계열의 코어로드로 대체하기 위한 연구를 진행하였다. 본 연구에서는 실리콘 코어로드의 대체물질 후보로서 고융점 금속인 텅스텐, 탄탈륨, 몰리브덴을 선택하였고, co-sputtering system을 이용하여 다성분계의 박막을 실리콘 기판에 증착시켜 $800^{cdot}C$에서 $1000^{cdot}C$의 고온에서 열처리 후 박막의 형상변화 및 확산정도를 관찰하였다. 열처리 온도에 따른 박막의 형상 및 확산 정도를 관찰하기 위하여 Scanning electron microscopy (SEM), X-ray diffractometer(XRD), transmission electron microscopy(TEM), auger electron spectroscopy(AES)가 사용되었다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.44-50
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• 1993

In an attempt to improve the electrical characteristics of tantalum pentoxide dielectric film, silicon substrate was reacted with a nitrogen plasma to form a silicon nitride of 50.angs. and then tantalum pentoxide thin films were formed by reactive sputtering in the same chamber. Breakdown field and leakage current density were measured to be 2.9 MV/cm and 9${\times}10^{8}\;A/cm^{2}$ respectively in these films whose thickness was about 180.angs.. With annealing at rectangular waveguides with a slant grid are investigated here. In particular, 900.deg. C in oxygen ambient for 100 minutes, breakdown field and leakage current density were improved to be 4.8 MV/cm and 1.61.6${\times}10^{8}\;A/cm^{2}$ respectively. It turned out that the electrical characteristics could also be improved by oxygen plasma post-treatment and the conduction mechanism at high electric field proved to be Schottky emission in these double-layered films.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.173-183
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• 1995

Blue light of 0.15mW at 417.6nm is generated in a quasi-phase-matched LITaO$_{3}$ optical waveguide. A new heat-treatment technique using a metal-oxide mask is proposed to fabricate the periodic domain-inverted grating with less degraded optical properties. The mask promotes the proton indiffusion by inhibition of the proton outdiffusion during the heat treatment. It reduces the amount of the initial proton exchange for the domain inversion and prevents the formation of crystal defects on the surface accompanied by the proton outdiffusion. Consequently, it minimizes the degradation of nonlinear coefficient and scattering loss caused by the initial proton exchange.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.9 s.240
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• pp.1276-1281
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• 2005

Compound semiconductors are the semiconductors composed of more than two chemical elements. Lithium Tantalate$K_I$ wafer is used for several optical devices, especially surface acoustic wave(SAW) device. Because of the lithography in SAW device process, $LiTaO_3$ polishing is needed. In this paper, the commercial slurries $(NALC02371^{TM},\; ILD1300^{TM},\;ceria slurry)$ used for chemical mechanical polishing(CMP) were tested, and the most suitable slurry was selected by measuring material removal rate and average centerline roughness$(R_a)$. From these result, it was proven that $ILD1300^{TM}$ was the most suitable slurry for $LiTaO_3$ wafer CMP due to the chemical reaction between solution in slurry and material.

• Korean Journal of Materials Research
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• v.13 no.12
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• pp.806-811
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• 2003

Ultrafine TaC powders were synthesised by spray drying using tantalum oxalate solution. The spray dried powders were spherical shape and less than 30 $\mu\textrm{m}$ in size. The powders calcined at 500 and X$700^{\circ}C$ showed amorphous structures and $Ta_2$$O_{5}$ phase was obtained by calcining at $700^{\circ}C$. The particle size and shape remains constant after calcination. The calcined spherical powders were composed of an agglomerate of primary particles under 50 nm in size. The complete formation of TaC could be achieved by heat treatment at $1050^{\circ}C$ for 6 hrs. The observed size of TaC powders by TEM was less than 200 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-film for high precision resistors, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16 %)$N_2$). Structural properties studied using X-ray diffraction(XRD) indicate the presence of TaN, $Ta_3N_5$ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % $N_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho=305.7{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-36 $ppm/^{\circ}C$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.114.1-114.1
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• 2017

불용성 전극이 고속 전기도금 공정에 사용되기 위해서는 전기화학 반응이 우수하고, 높은 내구성을 가져야 한다. 불용성 전극의 내구성은 기지층 표면전처리, 금속산화물 조성, 코팅층 두께, 소결 온도 등 다양한 전극제조 공정인자들에 의해 영향을 받는다. 본 연구에서는 불용성 전극의 내구성을 향상시키기 위해 전극 전처리 및 백금족 산화물 조성비의 공정변수로 전극을 제조하였고, 가속수명평가법을 사용하여 전극의 내구성을 평가하였다. 고속 전기도금 공정환경에서는 이리듐(Ir)계 및 탄탈륨(Ta)계 산화물 조성을 가지는 불용성전극의 내구수명이 우수한 경향을 나타내었으며, 귀금속 산화물 코팅층 두께가 얇을수록 불용성전극의 내구수명은 크게 저하되었다. 또한, Ir-Ta 조성 불용성전극의 경우 내구성 향상 기지체 표면전처리를 통해 전극의 내구수명이 10배 이상 향상되었음을 확인하였다.

• Journal of the Semiconductor & Display Technology
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• v.19 no.1
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• pp.17-22
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• 2020

Recently, the decrease in thin film thickness has been actively studied by changing several physical elements such as the increase in revolution velocity of lower substrate equipped with AC or DC motor. In this paper, we propose a novel spin coater control system that changes AC or DC motor and common use software with limitation of velocity and position control into step motor and LABVIEW software based on GUI to control revolution velocity and position more precisely. By determining six input values of rotation velocity 1, 5, 10, 25, 50, 100 PPS, we fabricated six samples using coating target, TA(tantalum) on silicon substrate and measured their thin film thickness by SEM. Hence, this research can be applied to inferring thin film thickness of tantalum regarding any value of revolution velocity without additional experiments and for linear reference model via property analysis of thin film thickness using other thin-film materials.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.3
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• pp.87-95
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• 1992

The electrical characteristics of Al/TaS12TOS15T/SiOS12T/Si metal insulator-semiconductor (MIS) capacitors were studied. Tantalum pentoxide thin films on SiOS12T/p-Si substrate have been prepared by thermal oxidation at 450-$600^{\circ}C$ of sputter deposited tantalum films. Composition and structures of the tantalum oxide films were examined by AES and XRD. From the C-V analysis, dielectric constant of TaS12TOS15T which were oxidized at 55$0^{\circ}C$ for 1h in OS12T were 18-23, the value depending on the oxidation and annealing temperature. The leakage current density was found to be about 10S0-10T-10S0-9T A/cmS02T at an applied electric field of 1 MV/cm. The dielectric breakdown strength of the tantalum oxide films annealed at 100$0^{\circ}C$ were in the range from 2.5MV/cm to 2.8 MV/cm.

• Korean Journal of Materials Research
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• v.18 no.4
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• pp.181-186
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• 2008

In this study, tantalum (Ta) compacts were fabricated in a spark plasma sintering (SPS) process and their microstructure and mechanical properties were investigated. Ta compacts with a density of 99% were successfully fabricated by controlling the sintering conditions of the current and the temperature. The density and hardness were increased as the sintering temperature increased. The $Ta_2C$ compound was observed at the surface of the compacts due to the contact between the Ta powder and graphite mold during the sintering process. The main fracture mode showed a mixed type with intergranular and transgranular modes having some roughness.