• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.17-24
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• 2004

This paper describes a novel bit line structure to minimize coupling noise induced by coupling capacitance between bit lines. In DRAMs coupling capacitance is inherently present bit lines. As in submicron process the bit line space gets narrower. bit line coupling capacitance increases and this increased coupling capacitance sharply raises cross-talk noise. In this paper using different layers of metal for adjacent bit lines has been tested to reduces cross-talk noise and a novel bit line structure capable of reducing capacitance is introduced and verified.