• Title/Summary/Keyword: 커패시턴스

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Characteristic of Planar Spiral Inductor for Wireless Signal Transmission based on AC Coupling (AC 커플링 기반 무선 신호 전송을 위한 평면 나선형 인덕터의 특성)

  • Kim, Jae-Wook
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.13 no.9
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    • pp.4126-4130
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    • 2012
  • In this paper, we proposed planar spiral inductors based on AC coupling for high-frequency wireless signal transmission. Design and characteristics of various structures of the inductor were analyzed. Capacitance between the inductors can be reduced by positioning two thin-film inductors in parallel. So two structures were proposed. First structure is inter-diagonal structure. This structure was made not to overlap the wire part of the paralleled two inductors. Second structure is On-chip type structure that the two thin-film inductors were in parallel but located on diagonal line not to face each other. The resonance in this structure was reduced from twice to once by increasing horizontal distance between the two thin-film inductors, because the capacitance effect between the two thin-film inductors decreases when the distance between the two inductors increases.

A Study on Low-Current-Operation of 850nm Oxide VCSELs Using a Large-Signal Circuit Model (대신호 등가회로 모델을 이용한 850nm Oxide VCSEL의 저전류 동작 특성 연구)

  • Jang, Min-Woo;Kim, Sang-Bae
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.10 s.352
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    • pp.10-21
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    • 2006
  • We have studied the characteristics of oxide VCSELS when their off-current and on-current are kept small in order to find out the possibility of low current operation. A large signal equivalent circuit model has been used. By comparing measured data and simulation results, the parameters of the large signal models are obtained including the capacitances. Using the large signal model, we have investigated the effects of capacitance and on/off currents upon the turn-on/turn-off characteristics and eye diagram. According to the experiment and simulation, the depletion capacitance, which has been neglected, is found to have significant influence on the him-on delay and eye-diagram. Therefore, for high speed and low current operation, the reduction of the depletion capacitance is essential.

Design and Modeling of the Embedded Meander line and Radial/T Stub for low-cost SOP (저가용 SOP를 위한 적층형 Meander와 Radial/T Stub의 설계와 모델링)

  • Cheon, Seong-Jong;Yang, Chang-Soo;Lee, Seung-Jae;Park, Jae-Yeong
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1591-1592
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    • 2006
  • 이동 및 정보통신 시스템이 소형화 및 고성능화됨에 따라 System OR Package (SOP) 기술의 연구개발이 주목을 받고 있다. 저가형 SOP를 위하여 가장 많은 연구가 다층인쇄회로 기판에 수동소자 및 전송선로를 내장시키는 것이다. 본 논문에서는, 8층 KB 기판에 Meander line과 Radial/T Stub 패턴을 Advanced Design System(ADS) simulation을 이용하여 설계 및 제작하고 분석함으로써 정확한 SOP 디자인 및 설계 방향을 제시하고자 한다. 설계변수-패턴의 length, width, spacing, 각도와 공정변수-1층/3층, 기판 재질(prepreg(PP)과 resin coated copper(RCC))을 두어 제작하여 그 특성을 비교하였다. Meander Line는 PP보다 RCC에서의 인덕턴스가 크고 높은 자가 공진주파수를 가졌고, 3층보다 1층에서의 인덕턴스가 안정적이었다. Radial/T Stub는 PP보다 RCC에서의 커패시턴스가 작으나, 높은 자가 공진 주파수로 커패시턴스가 안정적이었다. Meander Line은 RCC, 병렬 전송선로 간격-400um, 병렬 전송선로 길이-500um, 1층 설계 시, 인덕턴스-1.60nH, 자가 공진주파수-9.21GHz 특성이 가장 우수하고, Radial Stub는 RCC, $60^{\circ}$, 1층 설계 시, 커패시턴스-0.62pF, 자가 공진주파수-9.06GHz의 특성이 나타났고, T Stub는 RCC, Stub 길이-600um, Stub 너비-150um, 1층 설계 시, 커패시턴스 -0.38pF, 자가 공진주파수-10GHz이상으로 우수한 특성을 나타냈다.

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The Extraction Method of LDD NMOSFET's Metallurgical Gate Channel Length (LDD NMOSFET의 Metallurgical 게이트 채널길이 추출 방법)

  • Jo, Myung-Suk
    • Journal of IKEEE
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    • v.3 no.1 s.4
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    • pp.118-125
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    • 1999
  • A capacitance method to extract the metallurgical channel length of LDD MOSFET's, which is defined by the length between the metallurgical junction of substrate and source/drain under the gate, is presented. The gate capacitances of the finger type and plate type LDD MOSFET gate test patterns with same total gate area are measured. The gate bias of each pattern is changed, and the capacitances are measured with source, drain, and substrate bias grounded. The differences between two test pattern's capacitance data are plotted. The metallurgical channel length is extracted from the peak data at a maximum point using a simple formula. The numerical simulation using two-dimensional device simulator is performed to verify the proposed method.

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Study on the Ferroelectric Properties of ALD-HfO2 in Microwave Band for Tunable RF Apparatus (Tunable RF 기기 적용을 위한 ALD-HfO2의 마이크로파 대역 강유전체 특성 고찰)

  • Han, Sang-Woo;Lee, Chang-Hyun;Lee, Jeong-Hae;Cha, Ho-Young
    • Journal of IKEEE
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    • v.22 no.3
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    • pp.780-785
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    • 2018
  • In this work, We investigated the frequency-dependent capacitance tunability of a metal-ferroelectric-metal variable capacitor fabricated using ALD $HfO_2$ ferroelectric material. The capacitance of the MFM capacitor could be tuned as a function of the bias voltage, up to the microwave frequency range. We observed a capacitance tuning range of ~3 % up to 2.5 GHz, proving the feasibility of the use of ALD $HfO_2$ in the microwave frequency band.

Compensation of Temperature Characteristics for Capacitance Estimation of DC-link Capacitors (직류링크 커패시터의 용량 추정시 온도특성 보정)

  • Pu, Xingsi;Kim, Kyung-Hyun;Lee, Dong-Choon;Lee, Kyo-Beum;Kim, Jang-Mok
    • The Transactions of the Korean Institute of Power Electronics
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    • v.15 no.5
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    • pp.387-393
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    • 2010
  • This paper proposes a correction method of capacitance estimation considering the temperature effect for the DC-link capacitor banks in three-phase AC/DC/AC PWM converters. At first, operating temperature of the capacitors is detected and capacitance variation is corrected due to the temperature effect. Thermisters are used for sensing the temperature and voltage variation across the thermister is exploited to identify the capacitance change. The validity of the proposed method has been verified by experimental results.

Capacitive Equivalent Circuit Modeling for Coplanar Waveguide Discontinuities (코플래너 웨이브가이드 불연속에 대한 용량성 등가회로 모델링)

  • 박기동;임영석
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.8 no.5
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    • pp.486-487
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    • 1997
  • This paper presents the pure capacitive lumped element equivalent circuits for several coplanar waveguide(CPW) discontinuities such as an open-end, an open-end with connected ground planes, a gap and an open-end CPW stub and gives their capacitive element values as a function of physical dimensions of the discontinuity and the frequency for a specific substrate. The capacitive element values are determined from the scattering parameters which are obtained using the finite-difference time-domain(FDTD) method. For an open-end, an open-end with connected ground planes and a gap, the numerical results of the FDTD are compared with the quasi-static results which are calculated using the three- dimensional finite difference method(3D-FDM).

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Three Dimensional Calculation of Capacitance for VLSI Interconnection Line (VLSI 전송선로에서의 커패시턴스의 3차원 계산)

  • 김한구;곽계달
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.7
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    • pp.64-72
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    • 1992
  • The capacitance for three-dimensional (3D) VLSI interconnection line is calculated. Capacitance is obtained by solving integral equation that is the product of Green's function and surface charge density. Surface charge density is assumed that constant in each subarea, and subarea is devided by rectangular size in interconnetion surfaces. Up to date, so this integral method using Green's function is calculated by Fourier integral transformation, that it cannot help making an error. In this paper, it is proposed to use direct integration instead of Fourier integral method. And we proved accuracy of this paper in comparision with conventional results.

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An Available Capacitance Increasing PLL with Two Voltage Controlled Oscillator Gains (두 개의 이득 값을 가지는 전압제어발진기를 이용하여 유효 커패시턴스를 크게 하는 위상고정루프)

  • Jang, Hee-Seung;Choi, Young-Shig
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.7
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    • pp.82-88
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    • 2014
  • An available capacitance increasing phase-locked loop(PLL) with two voltage controlled oscillator gains has been proposed. In this paper, the available capacitance of loop filter is increased by using two positive/negative gains of voltage controlled oscillator (VCO). It results in 1/10 reduction in the size of loop filter capacitor. It has been designed with a 1.8V $0.18{\mu}m$ CMOS process. The simulation results show that the proposed PLL has the same phase noise characteristic and a locking time of conventional PLL.

A Continuously Frequency Tunable Electromagnetic Wave Absorber Using Varactor Diodes and Multiple Slits (버랙터와 다중 슬릿들을 결합한 광대역 주파수 가변 흡수체)

  • Cho, Soo-Bean;Jo, Eon-Seok;Kim, Dongho
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.4
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    • pp.399-402
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    • 2016
  • We propose a thin electromagnetic wave absorber using varactor diodes combined with intentionally introduced multiple slits, which enables continuous sweep of an absorption frequency band throughout relatively wide frequencies. The absorption frequency range of conventional electrically tunable absorbers has been restricted by high capacitance of varactor diodes. In order to overcome the problem, we introduce parasitic capacitance and connect them with varactors in series, which reduces the total capacitance dramatically. As a result, we can raise the operating absorption frequency up to the X-band region. Moreover, we can also control the operating frequencies by modifying the number of slits with little change in an entire frequency sweep range. Good agreement between simulated and measured results show the validity of our proposal.