• Journal of Adhesion and Interface
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• v.22 no.2
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• pp.57-62
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• 2021

Recently, the atomically thin two-dimensional transition-metal dichalcogenides (TMDs) have received considerable attention for the application to next-generation semiconducting devices, owing to their remarkable properties including high carrier mobility. However, while a technique for growing graphene is well matured enough to achieve a wafer-scale single crystalline monolayer film, the large-area growth of high quality TMD monolayer is still a challenging issue for industrial application. In order to enlarge the size of single crystalline MoS₂ monolayer, here, we systematically investigated the effect of process parameters in molten-salt-assisted chemical vapor deposition method. As a result, with optimized process parameters, we found that single crystalline monolayer MoS₂ can be grown as large as 420 ㎛.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.199.2-199.2
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• 2015

전이금속 칼코겐화합물(TMD)은 2차원 박막 물질로, 그래핀과 함께 차세대 사물인터넷에 적용할 수 있는 전자소자의 소재로 활용될 것으로 기대되고 있다. 특히 TMD는 그래핀과 다르게 1.2 eV 이상의 넓은 밴드갭을 지녀, 기존 실리콘 기반 반도체 소자를 대체할 차세대 물질로 각광받고 있다. TMD는 또한 실리콘 등의 3차원 반도체보다 광전효율이 뛰어나며, 이를 활용한 광전소자의 개발 및 연구가 활발히 진행되고 있다. 그러나 TMD는 그 두께가 나노미터 단위로 매우 얇아 광흡수율이 매우 떨어지는 단점이 있다. 우리는 이러한 TMD 기반 광전소자의 광흡수율을 향상시키기 위해 광전효율이 매우 뛰어난 페로브스카이트(Perovskite)를 TMD 채널 위에 덮음으로써, 이종접합 광전소자를 구현하였다. TMD 물질은 이황화 몰리브데넘($MoS_2$)을 선택하였으며, 광흡수층으로 선택한 페로브스카이트는 $MAPbI_3$을 스핀 코팅을 통해 TMD 채널 층에 접합하였다. 우리는 Photoluminescence 및 UV-Vis 측정을 통해 페로브스카이트 및 페로브스카이트/$MoS_2$ 층의 광특성을 측정하여 페로브스카이트에서 생성된 광캐리어가 확산되어 $MoS_2$에 전달되는 것을 확인하였다. 우리는 추가로 4가지 서로 다른 파장대의 레이저(520, 655, 785, 850 nm)를 이용하여 페로브스카이트 광흡수층이 있을 때와 없을 때의 $MoS_2$ 광검출기의 성능 변화를 관찰하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.213.1-213.1
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• 2015

Field effect transistors (FETs)를 기반으로 한 바이오센서는 빠른 응답속도, 저비용, label-free 등을 이유로 각광받고 있다. 그러나 3D 구조를 기반으로 한 FETs 바이오센서의 낮은 sensitivity의 한계점을 지니며, 이를 극복하기 위해 1D 구조의 나노튜브 등을 활용하였으나 여전히 높은 sensitivity의 확보는 힘들다. 최근에는 이러한 문제점을 극복하기 위해 이차원 반도체 물질 중 하나인 Transition metal dichalcogenide (TMD)를 이용하여, 700 이상의 sensitivity를 지니는 pH센서 및 100 이상의 sensitivity를 지니는 바이오센서가 보고되었다. 하지만 이보다 더 높은 정확성 및 반응성을 높이기 위한 연구는 부족한 실정이다. 우리는 DNA 템플릿을 이용하여, TMD FET 기반 pH 및 바이오센서의 반응성을 극대화시키는 연구를 선보인다. DNA는 7~8정도의 유전상수 (K)를 가지는 물질로 기존 $SiO_2$(K=3.9)보다 높은 유전상수를 가지며 두께를 0.7 nm로 매우 얇게 형성할 수 있는 장점이 있다. 이는 FET 기반 바이오센서의 표면 캐패시턴스를 높여 sensitivity를 극대화할 수 있으며, 기존에 사용된 high-k 기반 바이오센서와 비교하여도 약 10배 이상의 sensitivity 향상을 노릴 수 있다. 또한, TMD 물질로 우리는 $WSe_2$를 선택하였으며, pH 용액의 receptor로써 우리는 3-Aminopropyltriethoxysilane (APTES)를 활용하였고, 템플릿으로 사용된 DNA는 DX tile 및 Ring type의 두 가지를 사용하였다. 추가로, DNA의 phosphate backbone을 중성화시키고 DNA의 base pairing의 charge 안정화를 위해 구리 이온($Cu^{2+}$) 및 란타넘족($Tb^{3+}$)을 추가하였다. 완성된 바이오센서의 pH 센싱을 위해 우리는 pH 6,7,8의 표준 용액을 사용하였으며, 재현성 및 반복성의 확인하였다.

• Ceramist
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• v.22 no.4
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• pp.350-356
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• 2019

Recently, transition metal dichalcogenide (TMDC) monolayers have been the subject of research exploring the physical phenomenon generated by low dimensionality and high symmetry. One of the keys to understanding new physical observations is the electronic band structure of 2D TMDCs. Angle-resolved photoelectron spectroscopy (ARPES) is, to this point, the best technique for obtaining information on the electronic structure of 2D TMDCs. However, through ARPES research, obtaining the long-range well-ordered single crystal samples always proves a challenging and obstacle presenting issue, which has been limiting towards measuring the electronic band structures of samples. This is particularly true in general 2D TMDCs cases. Here, we introduce the approach, with a mathematical framework, to overcome such ARPES limitations by employing the high level of symmetry of 2D TMDCs. Their high symmetry enables measurement of the clear and sharp electronic band dispersion, which is dominated by the band dispersion of single-crystal TMDCs along the two high symmetry directions Γ-K and Γ-M. In addition, we present two important studies and observations for the direct measuring of the exciton binding energy and charge transfer of 2D TMDCs, both being established by the above novel approach.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.576-580
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• 2016

Single-layered transition metal dichalcogenides (TMDs) exhibit more interesting physical properties than those of bulk TMDs owing to the indirect to direct bandgap transition occurring due to quantum confinement. In this research, we demonstrate that layer-by-layer laser etching of molybdenum diselenide ($MoSe_2$) flakes could be controlled by varying the parameters employed in laser irradiation (time, intensity, interval, etc.). We observed a dramatic increase in the photoluminescence (PL) intensity (1.54 eV peak) after etching the samples, indicating that the removal of several layers of $MoSe_2$ led to a change from indirect to direct bandgap. The laser-etched $MoSe_2$ exhibited the single $MoSe_2$ Raman vibration modes at ${\sim}239.4cm^{-1}$ and ${\sim}295cm^{-1}$, associated to out-of-plane $A_{1g}$ and in-plane ${E^1}_{2g}$ Raman modes, respectively. These results indicate that controlling the number of $MoSe_2$ layers by laser etching method could be employed for optimizing the performance of nano-electronic devices.

• Journal of The Korean Institute of Defense Technology
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• v.6 no.1
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• pp.1-6
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• 2024

Two-dimensional materials, which have a crystal structure in a two-dimensional plane, are attracting attention as next-generation materials in nanotechnology, from Graphene, first discovered in 2004, to MXene, discovered in 2011. In this study, Among new 2D materials, we introduce the characteristics of Graphene, MXene, hexagonal boron nitride, and transition metal chalcogenide, which are being studied extensively, and introduce technologies that can be used to apply each 2D material to the defense field. We would like to present a method that can be applied to next-generation weapon systems and war-power support systems.

• Journal of Adhesion and Interface
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• v.21 no.3
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• pp.107-112
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• 2020

Recently, the atomically thin transition-metal dichalcogenide (TMD) semiconductors have attracted much attention owing to their remarkable properties such as tunable bandgap with high carrier mobility, flexibility, transparency, etc. However, because these TMD materials have a significant drawback that they are easily degraded in an ambient environment, various attempts have been made to improve chemical stability. In this research article, I report a method to improve the air stability of WSe₂ one of the TMD materials via surface passivation with an h-BN insulator, and its application to field-effect transistors (FETs). With a modified hot pick-up transfer technique, a vertical heterostructure of h-BN/WSe₂ was successfully made, and then the structure was used to fabricate the top-gate bottom-contact FETs. The fabricated WSe₂-based FET exhibited not only excellent air stability, but also high hole mobility of 150 ㎠/Vs at room temperature, on/off current ratios up to 3×10⁶, and 192 mV/decade of subthreshold swing.