• Title/Summary/Keyword: 칩설계

Search Result 1,592, Processing Time 0.029 seconds

Two-dimensional OCDMA Encoder/Decoder Composed of Double Ring Add/Drop Filters and All-pass Delay Filters (이중 링 Add/Drop 필터와 All-pass 지연 필터로 구성된 이차원 OCDMA 인코더/디코더)

  • Chung, Youngchul
    • Korean Journal of Optics and Photonics
    • /
    • v.33 no.3
    • /
    • pp.106-112
    • /
    • 2022
  • A two-dimensional optical code division multiple access (OCDMA) encoder/decoder, which is composed of add/drop filters and all-pass filters for delay operation, is proposed. An example design is presented, and its feasibility is illustrated through numerical simulations. The chip area of the proposed OCDMA encoder/decoder could be about one-third that of a previous OCDMA device employing delay waveguides. Its performance is numerically investigated using the transfer-matrix method combined with the fast Fourier transform. The autocorrelation peak level over the maximum cross-correlation level for incorrect wavelength hopping and spectral phase code combinations is greater than 3 at the center of the correctly decoded pulse, which assures a bit error rate lower than 10-3, corresponding to the forward error-correction limit.

Design of a High-Speed Data Packet Allocation Circuit for Network-on-Chip (NoC 용 고속 데이터 패킷 할당 회로 설계)

  • Kim, Jeonghyun;Lee, Jaesung
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2022.10a
    • /
    • pp.459-461
    • /
    • 2022
  • One of the big differences between Network-on-Chip (NoC) and the existing parallel processing system based on an off-chip network is that data packet routing is performed using a centralized control scheme. In such an environment, the best-effort packet routing problem becomes a real-time assignment problem in which data packet arriving time and processing time is the cost. In this paper, the Hungarian algorithm, a representative computational complexity reduction algorithm for the linear algebraic equation of the allocation problem, is implemented in the form of a hardware accelerator. As a result of logic synthesis using the TSMC 0.18um standard cell library, the area of the circuit designed through case analysis for the cost distribution is reduced by about 16% and the propagation delay of it is reduced by about 52%, compared to the circuit implementing the original operation sequence of the Hungarian algorithm.

  • PDF

A 1280-RGB $\times$ 800-Dot Driver based on 1:12 MUX for 16M-Color LTPS TFT-LCD Displays (16M-Color LTPS TFT-LCD 디스플레이 응용을 위한 1:12 MUX 기반의 1280-RGB $\times$ 800-Dot 드라이버)

  • Kim, Cha-Dong;Han, Jae-Yeol;Kim, Yong-Woo;Song, Nam-Jin;Ha, Min-Woo;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.46 no.1
    • /
    • pp.98-106
    • /
    • 2009
  • This work proposes a 1280-RGB $\times$ 800-Dot 70.78mW 0.l3um CMOS LCD driver IC (LDI) for high-performance 16M-color low temperature poly silicon (LTPS) thin film transistor liquid crystal display (TFT-LCD) systems such as ultra mobile PC (UMPC) and mobile applications simultaneously requiring high resolution, low power, and small size at high speed. The proposed LDI optimizes power consumption and chip area at high resolution based on a resistor-string based architecture. The single column driver employing a 1:12 MUX architecture drives 12 channels simultaneously to minimize chip area. The implemented class-AB amplifier achieves a rail-to-rail operation with high gain and low power while minimizing the effect of offset and output deviations for high definition. The supply- and temperature-insensitive current reference is implemented on chip with a small number of MOS transistors. A slew enhancement technique applicable to next-generation source drivers, not implemented on this prototype chip, is proposed to reduce power consumption further. The prototype LDI implemented in a 0.13um CMOS technology demonstrates a measured settling time of source driver amplifiers within 1.016us and 1.072us during high-to-low and low-to-high transitions, respectively. The output voltage of source drivers shows a maximum deviation of 11mV. The LDI with an active die area of $12,203um{\times}1500um$ consumes 70.78mW at 1.5V/5.5V.

A 10b 50MS/s Low-Power Skinny-Type 0.13um CMOS ADC for CIS Applications (CIS 응용을 위해 제한된 폭을 가지는 10비트 50MS/s 저 전력 0.13um CMOS ADC)

  • Song, Jung-Eun;Hwang, Dong-Hyun;Hwang, Won-Seok;Kim, Kwang-Soo;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.48 no.5
    • /
    • pp.25-33
    • /
    • 2011
  • This work proposes a skinny-type 10b 50MS/s 0.13um CMOS three-step pipeline ADC for CIS applications. Analog circuits for CIS applications commonly employ a high supply voltage to acquire a sufficiently acceptable dynamic range, while digital circuits use a low supply voltage to minimize power consumption. The proposed ADC converts analog signals in a wide-swing range to low voltage-based digital data using both of the two supply voltages. An op-amp sharing technique employed in residue amplifiers properly controls currents depending on the amplification mode of each pipeline stage, optimizes the performance of op-amps, and improves the power efficiency. In three FLASH ADCs, the number of input stages are reduced in half by the interpolation technique while each comparator consists of only a latch with low kick-back noise based on pull-down switches to separate the input nodes and output nodes. Reference circuits achieve a required settling time only with on-chip low-power drivers and digital correction logic has two kinds of level shifter depending on signal-voltage levels to be processed. The prototype ADC in a 0.13um CMOS to support 0.35um thick-gate-oxide transistors demonstrates the measured DNL and INL within 0.42LSB and 1.19LSB, respectively. The ADC shows a maximum SNDR of 55.4dB and a maximum SFDR of 68.7dB at 50MS/s, respectively. The ADC with an active die area of 0.53$mm^2$ consumes 15.6mW at 50MS/s with an analog voltage of 2.0V and two digital voltages of 2.8V ($=D_H$) and 1.2V ($=D_L$).

A Study for Design and Performance Improvement of the High-Sensitivity Receiver Architecture based on Global Navigation Satellite System (GNSS 기반의 고감도 수신기 아키텍처 설계 및 성능 향상에 관한 연구)

  • Park, Chi-Ho;Oh, Young-Hwan
    • Journal of the Institute of Electronics Engineers of Korea TC
    • /
    • v.45 no.4
    • /
    • pp.9-21
    • /
    • 2008
  • In this paper, we propose a GNSS-based RF receiver, A high precision localization architecture, and a high sensitivity localization architecture in order to solve the satellite navigation system's problem mentioned above. The GNSS-based RF receiver model should have the structure to simultaneously receive both the conventional GPS and navigation information data of future-usable Galileo. As a result, it is constructed as the multi-band which can receive at the same time Ll band (1575.42MHz) of GPS and El band (1575.42MHz), E5A band (1207.1MHz), and E4B band (1176.45MHz) of Galileo This high precision localization architecture proposes a delay lock loop with the structure of Early_early code, Early_late code, Prompt code, Late_early code, and Late_late code other than Early code, Prompt code, and Late code which a previous delay lock loop structure has. As we suggest the delay lock loop structure of 1/4chips spacing, we successfully deal with the synchronization problem with the C/A code derived from inaccuracy of the signal received from the satellite navigation system. The synchronization problem with the C/A code causes an acquisition delay time problem of the vehicle navigation system and leads to performance reduction of the receiver. In addition, as this high sensitivity localization architecture is designed as an asymmetry structure using 20 correlators, maximizes reception amplification factor, and minimizes noise, it improves a reception rate. Satellite navigation system repeatedly transmits the same C/A code 20 times. Consequently, we propose a structure which can use all of the same C/A code. Since this has an adaptive structure and can limit(offer) the number of the correlator according to the nearby environment, it can reduce unnecessary delay time of the system. With the use of this structure, we can lower the acquisition delay time and guarantee the continuity of tracking.

Wideband CMOS Voltage-Controlled Oscillator(VCO) for Multi-mode Vehicular Terminal (융복합 차량 수신기를 위한 광대역 전압제어 발진기)

  • Choi, Hyun-Seok;Diep, Bui Quag;Kang, So-Young;Jang, Joo-Young;Bang, Jai-Hoon;Oh, Inn-Yul;Park, Chul-Soon
    • The Journal of The Korea Institute of Intelligent Transport Systems
    • /
    • v.7 no.6
    • /
    • pp.63-69
    • /
    • 2008
  • Reconfigurable RF one-chip solutions have been researched with the objective of designing for smaller-sized and more economical RF transceiver and it can be applied to a vehicular wireless terminal. The proposed voltage-controlled oscillator satisfies the targeted frequency range ($4.2{\sim}5.4\;GHz$) and the frequency planning which correspond to the standards such as CDMA(IS-95), PCS, GSM850, EGSM, WCDMA, WLAN, Bluetooth, WiBro, S-DMB, DSRC, GPS, and DVB-H/DMB-H/L(L Band). In order to improve phase noise performance, PMOS is adopted in the cross-coupled pair, the tail current source and MOS varactor in this VCO and differential-typed switching is proposed in capacitor array. Based on the measurement results, a total power dissipation is $5.3{\sim}6.0\;mW$ at 1.8 V power supply voltage. The oscillator is tuned from 4.05 to 5.62 GHz; The tuning range is 33%. The phase noise is -117.16 dBc/Hz at 1 MHz offset frequency and the FOM (Figure Of Merit) is $-180.84{\sim}-180.5$.

  • PDF

A Miniaturized 2.5 GHz 8 W GaN HEMT Power Amplifier Module Using Selectively Anodized Aluminum Oxide Substrate (선택적 산화 알루미늄 기판을 이용한 소형 2.5 GHz 8 W GaN HEMT 전력 증폭기 모듈)

  • Jeong, Hae-Chang;Oh, Hyun-Seok;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.22 no.12
    • /
    • pp.1069-1077
    • /
    • 2011
  • In this paper, a design and fabrication of a miniaturized 2.5 GHz 8 W power amplifier using selectively anodized aluminum oxide(SAAO) substrate are presented. The process of SAAO substrate is recently proposed and patented by Wavenics Inc. which uses aluminum as wafer. The selected active device is a commercially available GaN HEMT chip of TriQuint company, which is recently released. The optimum impedances for power amplifier design were extracted using the custom tuning jig composed of tunable passive components. The class-F power amplifier are designed based on EM co-simulation of impedance matching circuit. The matching circuit is realized in SAAO substrate. For integration and matching in the small package module, spiral inductors and single layer capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 40 % and harmonic suppression above 30 dBc for the second(2nd) and the third(3rd) harmonic at the output power of 8 W.

Fractional-N PLL Frequency Synthesizer Design (Fractional-N PLL (Phase-Locked Loop) 주파수 합성기 설계)

  • Kim Sun-Cheo;Won Hee-Seok;Kim Young-Sik
    • Journal of the Institute of Electronics Engineers of Korea TC
    • /
    • v.42 no.7 s.337
    • /
    • pp.35-40
    • /
    • 2005
  • This paper proposes a fractional-N phase-locked loop (PLL) frequency synthesizer using the 3rd order ${\Delta}{\sum}$ modulator for 900MHz medium speed wireless link. The LC voltage-controlled oscillator (VCO) is used for the good phase noise property. To reduce the lock-in time, a charge pump has been developed to control the pumping current according to the frequency steps and the reference frequency is increased up to 3MHz. A 36/37 fractional-N divider is used to increase the reference frequency of the phase frequency detector (PFD) and to reduce the minimum frequency step simultaneously. A 3rd order ${\Delta}{\sum}$ modulator has been developed to reduce the fractional spur VCO, Divider by 8 Prescaler, PFD and Charge pump have been developed with 0.25um CMOS, and the fractional-N divider and the third order ${\Delta}{\sum}$ modulator have been designed with the VHDL code, and they are implemented through the FPGA board of the Xilinx Spartan2E. The measured results show that the output power of the PLL is about -lldBm and the phase noise is -77.75dBc/Hz at 100kHz offset frequency. The minimum frequency step and the maximum lock-in time are 10kHz and around 800us for the maximum frequency change of 10MHz, respectively.

A Dual Charge Pump PLL-based Clock Generator with Power Down Schemes for Low Power Systems (저 전력 시스템을 위한 파워다운 구조를 가지는 이중 전하 펌프 PLL 기반 클록 발생기)

  • Ha, Jong-Chan;Hwang, Tae-Jin;Wee, Jae-Kyung
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.42 no.11
    • /
    • pp.9-16
    • /
    • 2005
  • This paper proposes a programmable PLL (phase locked loop) based clock generator supporting a wide-range-frequency input and output for high performance and low power SoC with multiple clock frequencies domains. The propose system reduces the locking time and obtains a wide range operation frequency by using a dual-charge pumps scheme. For low power operation of a chip, the locking processing circuits of the proposed PLL doesn't be working in the standby mode but the locking data are retained by the DAC. Also, a tracking ADC is designed for the fast relocking operation after stand-by mode exit. The programmable output frequency selection's circuit are designed for supporting a optimized DFS operation according to job tasks. The proposed PLL-based clock system has a relock time range of $0.85{\mu}sec{\sim}1.3{\mu}sec$($24\~26$cycle) with 2.3V power supply, which is fabricated on $0.35{\mu}m$ CMOS Process. At power-down mode, PLL power saves more than $95\%$ of locking mode. Also, the PLL using programmable divider has a wide locking range ($81MHz\~556MHz$) for various clock domains on a multiple IPs system.

A Design of a Reconfigurable 4th Order ΣΔ Modulator Using Two Op-amps (2개의 증폭기를 이용한 가변 구조 형의 4차 델타 시그마 변조기)

  • Yang, Su-Hun;Choi, Jeong-Hoon;Yoon, Kwang Sub
    • Journal of the Institute of Electronics and Information Engineers
    • /
    • v.52 no.5
    • /
    • pp.51-57
    • /
    • 2015
  • In this paper, in order to design the A / D converter with a high resolution of 14 bits or more for the biological signal processing, CMOS delta sigma modulator that is a 1.8V power supply voltage - were designed. we propose a new structure of The fourth order delta-sigma modulator that needs four op amps but we use only two op amps. By using a time -interleaving technique, we can re-construct the circuit and reuse the op amps. Also, we proposed a KT/C noise reduction circuit to reduce the thermal noise from a noisy resistor. We adjust the size of sampling capacitor between sampling time and integrating time, so we can reduce almost a half of KT/C noise. The measurement results of the chip is fabricated using a Magna 0.18um CMOS n-well1 poly 6 metal process. Power consumption is $828{\mu}W$ from a 1.8V supply voltage. The peak SNDR is measured as a 75.7dB and 81.3dB of DR at 1kHz input frequency and 256kHz sampling frequency. Measurement results show that KT/C noise reduction circuit enhance the 3dB of SNDR. FOM of the circuit is calculated to be 142dB and 41pJ / step.