• Journal of Energy Engineering
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• v.2 no.3
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• pp.258-267
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• 1993

A mathematical model has been developed to describe heat transfer phenomena in a PCM (phase change material) module for development of an energy recovery system. The PCM module, melting point of which is around 1673 K, consists of silicon(96.8%), aluminium(2.7%) and marginal amounts of impurities such as Ca, Fe and Ti. The module is covered by a capsule that consists of SiC(58%) and graphite(42%). Physical properties that are required for model predictions were cited from the references. The apparent capacity method and the postiterative method wert used in the mathematical model to describe the phase changing mechanism. Temperature and velocity of fluid are the major variables in the model calculation. For the gas temperature of 1773 K that simulates real operating conditions, the prediction shows that PCM is rapidly melted to axial direction. However, for the gas temperature of 3000 K that is higher than the real conditions, PCM is melted rapidly to the radial direction. The gas velocity has no influence on the melting phenomena of the PCM except when the gas velocity is relatively low. At the low gas velocity asymmetry of the temperature profiles in PCM is obtained.

• The Journal of Engineering Research
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• v.1 no.1
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• pp.23-30
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• 1997

Energy transfer by free convection arises in many engineering applications, such as a hot steam radiator for heating a room, refrigeration coils, electric transformers, heating elements and electronic equipments. Generally unsteady natural convection flow in a horizontal channel with arbitrary wall temperatures and the mathematical and physical basis of convection transport has been considered in general. A physically meaningful exact solution of the problem has been obtained in a closed form by the application of the standard finite sine transform technique. Influences of the governing parameters, the Prandtl number and the Rayleigh number, to bring the flow and heat transfer to final steady states have been discussed separately. For constant values of the arbitray wall temperatures and of the function, determining the average axial velocity, the final steady state is approached in different times respectively for the cases when the Prandtl number Pr>1 and Pr<1. It is also seen that the function, representing the axial temperature gradient, is influenced by none of the governing parameters : but the steady state flow is influenced only by the Rayleigh number. There are, of course, many applications. Free convection strongly influences heat transfer from pipes and transmission lines, as well as from various electronic devices. It is also relevant to the environmental sciences, where it is responsible for oceanic and atmospheric motions, as well as related heat transfer processes.

• Journal of Biomedical Engineering Research
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• v.21 no.4
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• pp.363-372
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• 2000

The present study investigated flow dynamics of a straight elastic blood vessel under sinusoidal flow conditions in order to understand influence of wall motion and impedance phase angle(time delay between pressure and flow waveforms) on wall shear stress distribution using computational fluid dynamics. For the straight elastic tube model considered in the our method of computation. The results showed that wall motion induced additional terms in the axial velocity profile and the pressure gradient. These additional terms due to wall motion reduced the amplitude of wall shear stress and also changed the mean wall shear stress. Te trend of the changes was very different depending on the impedance phase angle. As the wall shear stress increased. As the phase angle was reduced from 0$^{\circ}$to -90$^{\circ}$for ${\pm}$4% wall motion case, the mean wall shear stress decreased by 10.5% and the amplitude of wasll shear stress increased by 17.5%. Therefore, for hypertensive patients vulnerable state to atherosclerosis according to low and oscillatory shear stress theory.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.3
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• pp.130-134
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• 2017

In this study, numerical simulation was performed to focus on optimized process condition for obtaining a long-term growth and high quality SiC crystal. It could be optimized by considering the change of fluid and a carbon flow in the Si melt added with 40 % Cr. The Crystal Growth Simulator ($CGSim^{TM}$, STR Group Ltd.) was used as a numerical simulation. It was confirmed that many parameters such as temperature, rotation speed of seed crystal and crucible, and seed position during the crystal growth step had a strong influence on the speed and direction of solution flow for uniform temperature gradient and stable crystal growth. The optimized process condition for the solution growth of SiC crystal was successfully exhibited by adjusting various process parameters in the numerical simulation, which would be helpful for real crystal growth.