• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.4
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• pp.785-792
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• 2012

In this paper, a current-voltage characteristics of n-channel junctionless and inversion mode(IM) MuGFET, and p-channel junctionless and accumulation mode(AM) MuGFET has been measured and analyzed for the application in high speed and low power switching devices. From the variation of the threshold voltage and the saturation drain current with the substrate bias voltages, their variations in IM devices are larger than junctionless devices for n-channel devices, but their variations in junctioness devices are larger than AM devices for p-channel devices. The variations of transconductance with substrate biases are more significant in p-channel devices than n-channel devices. From the characteristics of subthreshold swing, it was observed that the S value is almost independent on the substrate biases in n-channel devices and p-channel junctionless devices but it is increased with the increase of the substrate biases in p-channel AM devices. For the application in high speed and low power switching devices using the substrate biases, IM device is better than junctionless devices for n-channel devices and junctionless device is better than AM devices for p-channel devices.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.8
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• pp.1885-1890
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• 2013

In this paper, the electrical properties of nanoscale junctionless p-channel MuGFET at cryogenic temperature have been analyzed experimentally. The experiment was performed using a cryogenic probe station which uses the liquid Helium. It has been observed that the drain current oscillation at low drain voltage and cryogenic temperature was more pronounced in junctionless transistor than in accumulation mode transistor. The reason for more marked oscillation is due to the smaller electrical cross section area of the inversion channel which is formed at the center of silicon film in junctionless transistor. It was also observed that the drain current and maximum transconductance were increased as the measurement temperature increased. This is resulted from the increase of hole mobility and the decrease of the threshold voltage as the measurement temperature increases. The drain current oscillation due to the quantum effects can be occurred up to the room temperature when the device size scales down to the nanometer level.

• KOREAN POULTRY JOURNAL
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• v.36 no.6 s.416
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• pp.100-102
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• 2004

터널환기의 목표는 냉각이다. 터널방식은 계사내 축적된 열을 제거해도 닭이 편안함을 더 이상 느끼지 못할 때 실시하는 방법이며 아주 무더운 날씨에 풍냉효과를 필요로하여 증발냉각으로 계사내 실제온도를 낮추는 환기모드이다.

• Journal of Advanced Marine Engineering and Technology
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• v.34 no.4
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• pp.508-514
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• 2010

The objective of this work presented here was experimental study of steadystate and cold start exhaust nano-sized particle characteristics from common rail diesel engine. The effect of the diesel oxidation catalyst (DOC) on the particle number reduction was insignificant, however, particle number concentration levels were reduced by 3 orders of magnitude into the downstream of diesel particulate filter (DPF). In high speed and load conditions, natural regeneration of trapped particle occurred inside DPF and it was referable to increase particle number concentration. As fuel injection timing was shifted BTDC $6^{\circ}CA$ to ATDC $4^{\circ}CA$, particle number concentration level was slightly reduced, however particle number and size was increased at ATDC $9^{\circ}CA$. Nucleation type particle reduced and accumulation type particle was increased on EGR condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.142-142
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• 2012

최근 반도체 산업의 발전과 동시에 소자의 집적화에 따른 단채널 효과가 문제되고 있다. 채널 영역에 대한 게이트 영역의 제어능력이 떨어지면서 누설전류의 증가, 문턱전압의 변화가 발생하며, 이를 개선하기 위해 이중게이트 혹은 다중게이트 구조의 트랜지스터가 제안되었다. 하지만 채널길이가 수십나노미터 영역으로 줄어듦에 따라 소스/드레인과 채널간의 접합형성이 어렵고, 고온에서 열처리 과정을 거칠 경우 채널의 유효길이를 제어하기 힘들어진다. 최근에 제안된 Junctionless 트랜지스터의 경우, 소스/드레인과 채널간의 접합이 없기 때문에 접합형성 시 발생하는 공정상의 문제뿐만 아니라 누설전류영역을 개선하며, 기존의 CMOS 공정과 호환되는 이점이 있다. 한편, 집적화되는 반도체 기술에 따라, 동작 시 발생하는 스트레스가 소자의 신뢰성에 중요한 요인으로 작용하게 되며, 현재 Junctionless 트랜지스터의 신뢰성 특성에 관한 연구가 부족한 상황이다. 따라서, 본 연구에서는 Junctionless 트랜지스터의 NBTI 특성과 hot carrier effect에 의한 신뢰성 특성을 분석하였다. Junctionless 트랜지스터의 경우, 축적모드로 동작하기 때문에 스트레스에 의해 유기되는 캐리어의 에너지가 낮다. 그 결과, 반전모드로 동작하는 Junction type의 트랜지스터에 비해 스트레스에 의한 subthreshold swing 기울기의 열화와 문턱전압의 이동이 감소하였다. 또한 소스/드레인과 채널간의 접합이 없기 때문에 hot carrier effect에 의한 게이트 절연막 및 계면에서의 열화가 개선되었다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.10a
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• pp.780-783
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• 2010

Net residual dispersion (NRD) available to transmit RZ formats with different 24 wavelength as a function of duty cycles of RZ format and residual dispersion per span (RDPS) is induced by controlling precompensation only in 960 km optical transmission links of single mode fiber (SMF) with inline dispersion management (DM) for compensating of accumulated dispersion. It is confirmed that effective NRD range for different 24 wavelengths is gradually broadening as RDPS is more smaller, and as duty cycle of RZ format is more larger in the same RDPS.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.2
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• pp.319-324
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• 2012

This paper introduces a 2-dimensional touch screen panel driver based on an improved capacitive sensing circuit. The improved capacitive sensing circuit based on charge pump can eliminate the remaining charges of the intermediate nodes, which may cause output voltage drift. The touch screen panel driver with mixed-mode circuits was built and simulated using Cadence Spectre. Verilog-A models the digital circuits effectively and enables them to interface with analog circuits easily. From the simulation results, we can verify the reliable operations of the simple structured touch screen panel driver based on the improved capacitive sensing circuit offering no voltage drift.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.31 no.3
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• pp.85-94
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• 2003

A geosynchronous Satellite in general, has two momentum management logics to maintain its wheel momentum tin the stable region. The one is applied in order to control accumulative wheel momentum in the momentum dumping mode and the other is utilized in order to control attitude errors during the stationkeeping. In this paper, the momentum management logics are explained for dumping/sationkeeping mode and the logics are verified by simulation on the 3 attitude subsystem.

• The Transactions of the Korea Information Processing Society
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• v.2 no.4
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• pp.561-566
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• 1995

In the degraded mode, there is frequency-misalignment between the node clocks in a synchronous network. Therefore the phase differences between node clocks fluctuate greatly. To keep the phase difference under allowable level the pointer adjustment technique is used Unfortunately these processes cause an inherent pointer adjustment jitter, that accumulates in a chain of pointer adjustment systems. To analyze the jitter, computer simulation is carried and the results is compared with experimental jitter values.

• Korean Journal of Materials Research
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• v.7 no.8
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• pp.694-700
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• 1997

TiC(001) 면위에 Mg 금속을 단원자층으로 증착시킨 후 산화 및 열처리 과정을 거쳐서 MgO 초박막을 성장시키고, 성장된 MgO 막의 전자상태 및 표면포논을 UPS, XPS 및 HREELS를 사용하여 측정하였다. 전도성 기판위에 epitaxial 산화물막을 성장시킨 후 성장된 막의 전자구조 및 표면포논을 측정함으로써 벌크에서 분리된 2차원적 특성을 갖는 '표면 모델'의 물성을 연구하고자 하였는데, 이러한 '표면모델'은 잘 배열된 원자구조를 얻을 수 있고 두께가 충분히 얇아서 전하축적을 피할 수 있기 때문이다. 기판으로는 MgO와 같은 암염형 결정구조를 갖고 있고, 격자상수 차이가 2.6% 로서 매우 작으며, 비저항이 매우 낮은 전이 금속 탄화물 중의 하나인 TiC(001) 면을 사용하였다. TiC(001)면에 증착된 MgO층의 UPS He-l 스펙트럼을 측정한 결과 O2p및 XPS스펙트럼은 열처리를 전후로 하여 변하지 않았으며, 이로부터 상온에서 산소의 확산만으로 MgO 상이 형성됨을 알 수 있었다. MgO초박막의 표면 포논을 HREELS를 사용하여 검출하였다. 거시적 포논중에서 F-K 파 및 Rayleigh 모드가 관찰되었는데, F-k파는 MgO막의 2차원성으로 인하여 벌크의 경우보다 높은 진동 에너지를 갖고 있었고 Rayleigh모드는 벌크 MgO와 유사한 분산관계를 보였다. 미시적 포논중에서 Wallis(S/sub 2/)모드가 측정되었는데, 그 진동에너지는 벌크에서와 같고 off-specular방향에서도 소멸되지 않았다.