• Korean Journal of Materials Research
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• v.7 no.5
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• pp.431-433
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• 1997

We investigated a double ring resonator(DRR)device to improve the resonating Q value of a superconductor resonator. To make a DRR device, we made a large area YBCO film on a MgO substrate by pulsed laser deposition(PLD). Thetransition temperature was 88 K and the film was uniformly deposited. We also deposited 500$\AA$SrTiO$_{3}$on the YBCO thin film to protect the superconducting properties from degradation. The loaded Q value was measured as 50000 from simulation and as 2000 from experiment near 10GHz at 77K.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.439-443
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• 1987

$PbTiO_3$ thin film is prepared by rf sputtering method to implement the pyroelectric infrared detector at room temperature. Annealing of $PbTiO_3$ thin film is done from $400^{\circ}C$ to $550^{\circ}C$ each for 2 hours in furnace. The spectral response to recrystallization process of $PbTiO_3$ thin film is measured by IR photospectro meter. Pyroelectric detector Modeling is studied for implementing device using electrical equivalent circuit model. It is found that $PbTiO_3$ thin film has two IR absorption band within $1000-400\;cm^{-1}$ (10um-25um) and it's spectral response is improved as annealing temperature increase. As a result of pyroelectric detector modeling, we find the possibility of implementing optimum device structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.334-339
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• 1998

$Bi_2Sr_2CuO_x$(Bi-2201) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering (IBS) method. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of $5.0\times10^{-5}$ Torr is supplied with ultraviolent light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi-2201 is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1137-1139
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• 1993

The superconducting thin films of $YBa_2Cu_3O_{7-x}$ were deposited on (100) sapphire substrates at low temperature by rf magnetron sputtering and annealed at $895^{\circ}C$ for 60 sec. using rapid-thermal-annealing(RTA) technique. The films were characterized by SEM, four-point probe resistivity measurement, XRD, and AES. The RTA processed HTS films had a preferential structure with c-axis normal to the substrate surface.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.8
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• pp.222-227
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• 2020

Pb(Zr,Ti)O₃(denoted as PZT) in the perovskite phase is used as a dielectric, piezoelectric, and super appetizer material owing to its ferroelectric properties. A PZT film was formed by an RF magnetron sputtering process by preparing a target composed of Pb_1.3(Zr_0.52Ti_0.48)O₃. The PZT film was formed by dividing the material into a mono-layer PZT produced continuously with the same sputtering power and a bi-layer PZT produced with two-stage sputtering power. The bi-layer PZT consisted of a lower layer produced under low-power sputtering conditions and an upper layer produced under the same conditions as the mono-layer PZT. XRD revealed small amounts of pyrochlore phase in the mono-layer PZT, but only the perovskite phase was detected in the bi-layer PZT. SEM and AFM revealed the upper part of the bi-layer PZT to be more compact and smooth. Moreover, the bi-layered PZT showed superior symmetry polarization and a significantly reduced leakage current of less than 1×10-5 A/cm². This phenomenon observed in bi-layer PZT was attributed to the induction of growth into a pure perovskite phase by suppressing the formation of a pyrochlore phase in the upper PZT layer where the densely formed lower PZT layer was produced sequentially.

• Proceedings of the KIEE Conference
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• 2002.07b
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• pp.796-798
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• 2002

In these days, the interruption capability of some circuit breakers, which are installed in the transmission systems, is getting lower than the magnitude of the fault current because of continuous increase of power demand and relatively short power line which was installed in forms of mesh network As a result of these situations, fault current limiters (FCLs) are strongly necessary. There are various types which is investigated around the world, and new power apparatuses that have been newly considered and developed by many manufactures. In this paper, we considered resistive superconducting fault current limiters with YBCO thin films. The resistive limiters utilize a transition of YBCO films from superconducting to normal state caused by exceeding the critical current. By means of newly occurred impedance, the fault current will be limited effectively. Generally, a few current path patterns are available for YBCO films to enhance the current limiting performance of YBCO films. In this paper. the meander-type and the bi-spiral-type were used for current paths of YBCO flims. When YBCO films are quenched into the normal state, bubbles could be observed on the surface of YBCO films. Using our high-speed camera, the number of bubbles and the size of bubbles could be visualized and the relation between bubbles and current density was analyzed. By means of moving pictures of bubbles, we observed how the quench extended or how the heat was conducted in films.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.12-15
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• 2004

There are two major approaches to obtain texture template for HTS coated conductor (CC) ---IBAD and RABiTS. CC's with IBAD template showed both longer and higher Ic results so far. IBAD for CC began with YSZ, the processing of which is very slow compared to other processings needed for the fabrication of CC. Because of this very slow processing speed, IBAD with other materials such as Gd$_2$Zr$_2$O$_{7}$(GZO) and MgO have been developed. The processings of IBAD-GZO and IBAD-MgO are known to be up to 3times and 100 times. respectively, as fast as the processing of IBAD-YSZ. IBAD-MgO is very attractive in that the processing is very fast. IBAD-MgO also needs additional buffer layer(s). Many materials are being investigated to be used as a buffer layer on top of the MgO. BaZrO$_3$ (BZO) is a good candidate as the buffer layer on top of the IBAD-MgO because it is chemically stable and does not react with YBCO at high temperatures. It also has good lattice match with MgO. The BZO film has been deposited on single crystal MgO, and YBCO film was deposited on BZO/MgO to investigate the possibility of using BZO as both the buffer and capping layer of the CC.C.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.21-26
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• 2004

Deposition condition of YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) films on moving IBAD templates (CeO$_2$/IBAD-YSZ/SS) was studied in a hot-wall type metal organic chemical vapor deposition (MOCVD) process using single liquid source. The reel velocity was 40 cm/hr and the source mole ratios of Y(tmhd)$_3$:Ba(tmhd)$_2$:Cu(tmhd)$_2$ were 1:2.3:3.1 and 1:2.1:2,9, Two different types of IBAD templates with thin CeO$_2$ and thick CeO$_2$ layers were used, The YBCO films were successfully deposited at the deposition temperatures of 780~89$0^{\circ}C$ ; the a-axis growth was observed together with the c-axis growth up to 83$0^{\circ}C$. while the c-axis growth became dominant above 83$0^{\circ}C$. The top surface of the c-axis film was fairly dense and included a small amount of the a-axis growth, although the peaks of the a-axis grains were not observed in XRD pattern, The YBCO film deposited on IBAD template with thin CeO$_2$ layer showed low critical current of 2.5 A/cm-width. while the YBCO film deposited on IBAD template with thick CeO$_2$ layer showed higher critical current of 50 A/cm-width. This result indicates that thick CeO$_2$ layer is thermally more stable than thin CeO$_2$ layer at the high deposition temperature of the MOCVD process.s.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.16-20
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• 2004

YB $a_2$C $u_3$$O_{7-x}$ (YBCO) films were deposited on (100) SrTi $O_3$ single crystal substrates by a metal organic chemical vapor deposition (MOCVD) system of hot-wall type using single liquid source. Under the condition of the mole ratio of Y(tmhd)$_3$:Ba(tmhd)$_2$:Cu(tmhd)$_2$= 1:2.1:2.9. the deposition pressure of 10 Torr. the MO source line speed of 15 cm/min. the Ar/ $O_2$ flow rate of 800/800 sccm. YBCO films were prepared at the deposition temperatures of 780∼89$0^{\circ}C$. In case of the YBCO films with 2.2 ${\mu}{\textrm}{m}$ thickness deposited for 6 minutes at 86$0^{\circ}C$. XRD pattern showed complete c-axis growth and SEM morphology showed dense and crack-free surface. The atomic ratios of Ba/Y and Cu/Ba in the film were 1.92 and 1.56. respectively. The deposition rate of the film was as high as 0.37 ${\mu}{\textrm}{m}$/min. The critical temperature ( $T_{c.zero}$) of the film was 87K. The critical current of the film was 104 A/cm-width. and the critical current density was 0.47 MA/$\textrm{cm}^2$. For the thinner film of 1.3 ${\mu}{\textrm}{m}$ thickness. the critical current density of 0.62 MA/$\textrm{cm}^2$ was obtained.d.

• Korean Journal of Materials Research
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• v.3 no.4
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• pp.336-343
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• 1993

The standard map for polyerystalline $YBa_2Cu_3O_7$-X was construeted and indexed from pressed tape sintered bulk and compressed bulk samples were drawn by the [001-110-110] stereographie quadrant map and by the ECPs from individual grains of the speeimens. The relationship between the (001) texture development and critical current density (Jc) for various samples was discussed. An (001) orintation was preferred in the pressed tape thickness was decreased. and in the compressed bulk as the compression strain was increaesed.The (001) orientation made a signifieant in crease on Jc. We conclded that an ECP technique was very useful for the analysis of the orientation distribution in small-sized $YBa_2Cu_3O_7$-X specimens such as superonducting tapes or thin films.