• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.929-931
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• 1999

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, ozone gas pressure dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.133-136
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• 2003

The CeO$_2$ thin films were deposited on the biaxially textured Ni substrates by MOCVD process. The (200) oriented CeO$_2$ films were formed at the deposition temperature(Td) of 500~52$0^{\circ}C$, the oxygen partial pressure(PO2) of 0.90~3.33 torr and the deposition time(t) of 3~25 min. The surface roughness and gain size rapidly increased at Td $\geq$ 52$0^{\circ}C$ due to the grain growth. The surface roughness also increased as the deposition time increased. The optimized deposition conditions of the CeO$_2$ films for the YBCO coated conductor were Td= 500~51$0^{\circ}C$, PO2= 2.30 torr and t= 10~12 min.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.146-148
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• 2003

SrZrO$_3$ resistive oxide barriers on Ag sheathed Bi2223 monocore tapes were prepared by the sol-gel and dip coating method to reduce AC coupling loss. The performance of the dip-coated SrZrO$_3$ thin films was evaluated in terms of bond strength and surface microstructure by varying the amount of PVP (polyvinylpyrrolidone) binder. Although bond strength and coating thickness increased as the PVP content rose, surface microcracking was more severe for the specimen containing higher content of PVP binder. It suggests that coating thickness and microcracking of the SrZrO$_3$ films on Bi2223 tapes was governed primarily by the amount of PVP binder.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.72-74
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• 2003

We fabricated textured Ag substrates for coated conductor and evaluated the effects of annealing temperature on microstructural evolution, texture formation, and surface morphology. A strong {110}〈110〉 textured Ag substrate was obtained by cold rolling and annealing at 80$0^{\circ}C$: the full-width at half-maximum(FWHM) value of {110}〈110〉 poles was as sharp as 10$^{\circ}$. Surface morphology was evaluated by using Atomic force microscopy(AFM). Root-mean-square(RMS) roughness of the substrate annealed at 80$0^{\circ}C$ was 39.2 nm. The substrate of strong texture and smooth surface, fabricated in our study, is considered to be suitable for use as a substrate for deposition of superconductor films.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.52 no.7
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• pp.315-319
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• 2003

We improved quench properties of a superconducting fault current limiter (SFCL) based on YBCO thin films by their serial and parallel combinations. The SFCL consisted of 6 switching elements fabricated of 4 inch-diameter YBCO thin films. The quench currents of the switching elements were distributed between 33.9 A and 35.6 A. Simple serial connection resulted in imbalanced power dissipation between switching elements even at the quench current difference of 0.6 A. On the other hand, $2{\times}2$ and $3{\times}2$ stack combinations produced simultaneous quenches. The $3{\times}2$ stack combination showed better simultaneous quench behavior than the $2{\times}2$ stacks. This is suggested to be because the currents between switching elements in parallel connection of the $3{\times}2$ stacks were more effectively redistributed than the $2{\times}2$ stacks.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.264-267
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• 2002

An ozone condensation system is evaluated from the viewpoint of an ozone supplier for oxide thin film growth. Ozone is condensed by the adsorption method and its concentration is analyzed by three methods; ultraviolet absorption, thermal decomposition and Q-mass analyzing methods. Thermal decomposition method is found to be available to the concentration evaluation from dilution to highly condensed ozone. The highest ozone concentration condensed by the adsorption method is evaluated to be 97 mol%

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.272-275
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• 2002

An ozone condensation system is evaluated in the viewpoint of an ozone supplier for oxide thin film growth. Ozone is condensed by the adsorption and distillation method. Then their concentrations are analyzed by three methods; ultraviolet absorption, thermal decomposition and Q-mass analyzing methods. Thermal decomposition method is found to be available to the concentration evaluation from dilution to highly condensed ozone. The highest ozone concentration condensed by the adsorption method is evaluated to be 96 mol%. The ozone is supplied for a sufficiently long time to grow oxide thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.94-97
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• 2005

Bismuth high Tc superconducting thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra low growth rate, and sticking processing of the respective elements are evaluated. The sticking processing of bismuth element in bismuth high Tc superconducting thin film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the bismuth phase formation in the co-deposition process.

• Journal of the Korean Ceramic Society
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• v.28 no.3
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• pp.243-251
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• 1991

High-Tc YBa2Cu3O7-x superconducting thin films have been prepared by single-target off-axis RF magnetron sputtering. Optimal ratio of Y : Ba : Cu of the single-target was determined as 1 : 1.65 : 3.35 in order to obtain the stoichiometric films. Tc, crystalline phase, and microstructures of the surface and cross-section of the ex-situ YBa2Cu3O7-x thin films on MgO(100) had a Tc, zero of 80K, and the films on LaAlO3/Si had a Tc, on-set of 90 K and a Tc, zero of 70 K.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.623-626
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• 2002

High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, Tsub, and ozone gas pressures, pO$_3$. The correlation diagrams of the BSCCO phases with Tsub and pO$_3$are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputterina Bi2201 and Bi2223 as well as Bi2212 phases come out as stable phases depending on Tsub and pO$_3$. From these results, the thermodynamic evaluation of ΔH and ΔS, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase, was performed.