• Korean journal of communication and information
• /
• v.48
• /
• pp.63-89
• /
• 2009

The contents provided by the terrestrial broadcasters have governed the market based on their excellent quality in Korea. In spite of the launching of various pay TV services focusing on multi-channel, it is not yet easy to find out the substitutionary pay TV channels for the terrestrial. Therefore, the real time retransmission of the terrestrial channels brings about the crucial effects on the pay TV's competency, especially on the new media as the invisible barrier. So it is frequently proposed to change the aim of the retransmission policy from the universal access to the promotion of media industries. The retransmission can be divided into two types as the must carry and retransmission consent. In Korean situation, keeping or reducing the must carry channel would be appropriate rather than expanding them. However, periodic investigation into the public effects of the must carry is necessary, instead of it. Moreover, the rational and fair monetary compensation for the commercial channels(MBC, SBS, KBS2) is arising as the bottle neck in the retransmission agreements between the broadcasters. The conjoint analysis was carried out to estimate the welfare growth from the retransmission, based on the stated preference from the audiences' point of view. For must carry channels, it was certified as the 'win-win' strategy for both sides and audiences. For the commercial channels, it is revealed to be beneficial to the audiences. Thereafter, the standards for the rational price were suggested to promote the retransmission. This can contribute for inspiring the dynamic vitality to the media industry by reinforcing the contents competencies and for establishing the long term growth strategies.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.19 no.6
• /
• pp.1399-1404
• /
• 2015

This paper analyzed the phenomenon of drain induced barrier lowering(DIBL) for the ratio of channel length vs. thickness of asymmetric double gate(DG) MOSFET. DIBL, the important secondary effect, is occurred for short channel MOSFET in which drain voltage influences on potential barrier height of source, and significantly affects on transistor characteristics such as threshold voltage movement. The series potential distribution is derived from Poisson's equation to analyze DIBL, and threshold voltage is defined by top gate voltage of asymmetric DGMOSFET in case the off current is 10^-7 A/m. Since asymmetric DGMOSFET has the advantage that channel length and channel thickness can significantly minimize, and short channel effects reduce, DIBL is investigated for the ratio of channel length vs. thickness in this study. As a results, DIBL is greatly influenced by the ratio of channel length vs. thickness. We also know DIBL is greatly changed for bottom gate voltage, top/bottom gate oxide thickness and channel doping concentration.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• v.9 no.1
• /
• pp.1109-1112
• /
• 2005

In this paper, we evaluate the performance of pilot channel-aided channel estimation for multicarrier direct-sequence (DS) code division multiple access (CDMA) communication system as proposed by Kondo and Milstein [1]. We investigate the optimum number of pilot channels for various coherence bandwidths and different number of subchannels. Keeping the total transmit bandwidth fixed, an optimum number of total subchannels and pilot channels exists under specific channel and transmitted energy. We show that there is a tradeoff between the number of pilot channels and data subchannels, thereby requiring differing numbers of optimum pilot channels according to channel conditions.

• Proceeding of EDISON Challenge
• /
• 2013.04a
• /
• pp.210-213
• /
• 2013

실리콘 나노선 전계 효과 트랜지스터(Field Effect Transisor: FET)의 특성을 시뮬레이션을 통해 연구하였다. 일반적인 트랜스컨덕턴스(transconductance) 값을 이용하여 소자의 전계 효과 이동도(field effect mobility)를 추출했고, Y-function 방법을 이용하여 저전계 이동도(low field mobility)와 문턱전압(threshold voltage)를 구했다. 채널길이가 10nm로 매우 짧을 때와 100nm의 일반적인 길이 일 때의 전하 이동도 특성을 비교하여 Si 나노선 FET의 쇼트 채널 효과(short channel effect)를 보았다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2012.05a
• /
• pp.726-728
• /
• 2012

In this paper, the threshold voltage characteristics have been analyzed by varying the channel thicknesses of Double Gate MOSFET. The channel thickness, as well as determining the size of the device which hardly affects SCE(Short Channel Effects), therefore the channel thicknesses is a very important parameter in the IC(Integrated circuit) design. In this study, using series charge distribution to analyze the threshold voltage on the channel thickness. Consequently, the threshold voltage decreases with increasing a channel thickness.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.19 no.9
• /
• pp.1658-1667
• /
• 1994

In a cellular mobile communication control system, assignment channel for a call in a cell so as to achieve high spectral efficience is an important problem within limited frequence bandwidth. The spectral efficiency is related to the coloring problem of graph theory in a cellular mobile communication control system. In this paper, we propose channel offset scheme using a graph theory of cellular mobile communication control system and formulate chromatic bandwidth of channel offset system which is related graph coloring problem. From formulated channel assignment problem, we investgate an optimal channel offset scheme of more efficent frequence spectrum and cell design according to channel constitution and give and upper and lower bound for overall srectral bandwidth.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.12
• /
• pp.68-74
• /
• 1998

Improved performance and suppressed short-channel effects of polysilicon thin film transistors (poly-Si TFTs) with very thin electron cyclotron resonance (ECR) $N_2$O-plasma gate oxide have been investigated. Poly-Si TFTs with ECR $N_2$O-plasma oxide ($N_2$O-TFTs) show better performance as well as suppressed short-channel effects than those with conventional thermal oxide. The fabricated $N_2$O-TFTs do not show threshold voltage reduction until the gate length is reduced to 3 ${\mu}{\textrm}{m}$ for n-channel and 1 ${\mu}{\textrm}{m}$ for p-channel, respectively. The improvements are due to the smooth interface, passivation effects, and strong Si ≡ N bonds.

• Proceedings of the Korea Institutes of Information Security and Cryptology Conference
• /
• 2003.07a
• /
• pp.11-16
• /
• 2003

본 논문에서는 새로운 공개키 다중채널 broadcast encryption scheme(이하 PK-MCBE라 부른다)을 제안한다. 일반적인 broadcast encryption은 하나의 채널스트림을 전송하는 반면 PK-MCBE는 다수채널의 컨텐츠 스트림을 전송한다. 본 논문에서 제안하는 방식에서 수신자는 단지 하나의 비밀키만을 필요로 하며 한번 받은 비밀키는 변경되지 않는다. 제안하는 방식에서는 각 채널당 송신자가 전송하는 메세지의 공통부분을 한번만 전송하여 전체 전송 메세지의 길이를 줄일 수 있다. 또한 배신자(traitors)를 추적하여 효과적으로 강제 탈퇴시킬 수 있다.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.8
• /
• pp.17-24
• /
• 2004

Quantum effects in the poly-gate are analyzed in two dimensions using the density-gradient method, and their impact on the short-channel effect of double-gate MOSFETs is investigated. The 2-D effects of quantum mechanical depletion at the gate to sidewall oxide is identified as the cause of large charge-dipole formation at the corner of the gate. The bias dependence of the charge dipole shows that the magnitude of the dipole peak-value increases in the subthreshold region and there is a large difference in carrier and potential distribution compared to the classical solution. Using evanescent-nude analysis, it is found that the quantum effect in the poly-gate substantially increases the short-channel effect and it is more significant than the quantum effect in the Si film. The penetration of potential contours into the poly-gate due to the dipole formation at the drain side of the gate corner is identified as the reason for the substantial increase in short-channel effects.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.7 no.2
• /
• pp.168-174
• /
• 2006

We investigated field-effect ion-transport devices based on carbon nanotubes by using classical molecular dynamics simulations under applied external force fields, and we present model schematics that can be applied to the nanoscale data storage devices and unipolar ionic field-effect transistors. As the applied external force field is increased, potassium ions rapidly flow through the nanochannel. Under low external force fields, thermal fluctuations of the nanochannels affect tunneling of the potassium ions whereas the effects of thermal fluctuations are negligible under high external force fields. Since the electric current conductivity increases when potassium ions are inserted into fullerenes or carbon nanotubes, the field effect due to the gate, which can modify the position of the potassium ions, changes the tunneling current between the drain and the source.