• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.406-409
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• 2001

In this paper, the microstructure and the dielectric properties of the Sr$_{1-x}$ Ca$_{x}$TiO$_3$(0$\leq$$\chi$$\leq$0.2) -based grain boundary layer ceramics were investigated. The specimens were sintered from 142$0^{\circ}C$ to 152$0^{\circ}C$ for 4hr. in $N_2$ gas. The 2nd phase formed by thermal diffusing from the surface lead to a very high apparent dielectric constant, $\varepsilon$$_{r}$>50000. The structural properties of the specimens were studied by X-ray diffraction and SEM, EDX. All specimens exhibited cubic structure. Increasing content of Ca, the peak intensity were decreased.ed.d.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.672-675
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• 2001

The Sr$\sub$0.8/Bi$\sub$2.4/Ta$_2$O$\sub$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF magnetron sputtering method. With increasing annealing tempera ture from 600[$^{\circ}C$] to 850[$^{\circ}C$], Bi-layered perovskite phase was crystallized above 650[$^{\circ}C$]. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}$C/$\textrm{cm}^2$], 48[kV/cm] respectively. The dielectric constant and leakage current density is 213, 1.01${\times}$10$\^$-8/ A/$\textrm{cm}^2$ respectively at annealing temperature of 750[$^{\circ}C$].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1084-1087
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• 2001

The (Sr$\sub$0.85/Ca$\sub$0.15/)TiO$_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO$_2$/Si) using RF sputtering method. The crystallinity of SCT thin films is increased with increase of substrate temperature in the temperature range of 100[$^{\circ}C$]∼500[$^{\circ}C$]. Also, the crystallinity of SCT thin films are obtained at the substrate temperature above 400[$^{\circ}C$]. SCT thin films had (111) preferred orientation. The dielectric constant changes almost linearly in temperature ranges of-80∼+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.1. SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.25-28
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• 1993

In this study, the dielectric properties of (Sr$\sub$1-x/Ca$\sub$x/)TiO$_3$+yNb$_2$O$\sub$5/(0.1 x 0.3, 0.004 y 0.008) ceramic capacitor were investigated. The specimen was sintered for 3hr at 1350$^{\circ}C$ in gas(N$_2$) atmosphere. The reduced specimen fared at 1200$^{\circ}C$ in air. The used specimens had the apparent permittivity of 3${\times}$10$^4$∼4${\times}$10$\^$5/, tan$\delta$ of 0.05 -0.2, and insulating resistance of 10$\sub$9/∼10$\^$12/ $\Omega$.cm. The specimens had the stable temperature coefficient of capacitance.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.743-745
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• 1998

SCT thin films were deposited with substitutional contents of Ca using RF magnetron sputtering method, and the structural and dielectric properties are investigated. SEM and XRB were examined to analysis of structural characteristics. The crtstallinity of SCT thin films and dielectric constant were increased at Ca 15[mol%]. While, it was decreased when the substitutional contents of Ca exceed over 15[mol%].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.566-569
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• 2002

The $(Sr_{0.9}Ca_{0.1})TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method. The maximum dielectric constant of SCT thin film is obtained by annealing at $600[^{\circ}C]$. The temperature properties of the dielectric loss have a value within 0.02 in temperature ranges of $-80{\sim}+90[^{\circ}C]$. The capacitance characteristics had a stable value within ${\pm}4[%]$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.174-175
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• 2006

In this paper, AC dielectric strength of the interface between Epoxy and EPDM (ethylene propylene diene terpolymer) was investigated. Air compress system was used to give pressure to the interface. Specimens were prepared in various ways to generate different surface conditions for each type of interface. Increasing interfacial pressure, decreasing surface roughness and spreading oil over surfaces improve the AC interfacial dielectric strength. Especially, the dielectric strength was saturated at certain interfacial pressure.

• Journal of the Semiconductor & Display Technology
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• v.4 no.1 s.10
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• pp.55-59
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• 2005

The ($Sr_{1-x}Ca_{x})Ti_{3}$(SCT) thin film are deposited on Pt-coated electrode (Pt/TiN/$SiO_{2}$/Si) using RF sputtering method. The maximum dielectric constant of SCT thin film is obtained by annealing at 600[$^{\circ}C$]. The temperature properties of the dielectric loss have a value within 0.02 in temperature lunges of -80 $\∼$ +90[$^{\circ}C$]). The capacitance characteristics had a stable value within ${\pm}4\%$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz).

• Electrical & Electronic Materials
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• v.9 no.6
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• pp.626-631
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• 1996

현재 선진국에서는 전자기기에서 복사되는 전자파 및 이에 노출되었을 때의 내성에 대해서 동시에 규제하고 있다. 따라서 전자기기에서 사용하는 신호의 주파수가 점점 높아지고 회로가 집적화되므로 회로설계에 포함되지 않는 기생 소자의 영향도 연구되어져야 한다. 그러므로 이러한 조건을 모두 고려하여 초고주파 회로를 완전하게 설계제작할 수 있다면 이는 이상적인 기술이라 할 수 있을 것이다. 이것을 이루려면 많은 시간 동안의 연구와 분석을 통해 최종 생산물이 되기까지 대단한 노력이 요구된다. 본문에서는 초고주파 인쇄 회로 기판을 설계할 때 고려해야 할 점, 즉, 유전율 및 유전체의 두께, 소자 실장, 접지면 부착 및 회로의 패키지화에 관해서 소개하고자 한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.167-173
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• 1998

In order to estimate the life time of epoxy composites used for modeling material of transformer, the AC breakdown experiments of it were experimented and then the AC breakdown data were also simulated by Weibull distribution equation in this study. The life time of H100F65 specimen was the shortest and it of SH100F65 specimen was the longest, and as the AC voltage was applied to specimen for 50[min], the breakdown probability of each specimen was 31.2[%], 17.00[%], 84.36[%] and 12.35[%], respectively.