• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.251-255
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• 2003

탄화규소 반도체에 대한 오옴성 금속 접촉 성질을 조사하기 위해 3종류의 금속 (Ni, Co, Cu)을 세척한 탄화규소 반도체 위에 직접 증착하여 전기적 성질을 조사 비교하였다. 이들 금속에 대한 오옴성 성질은 금속종류 뿐만 아니라 열처리조건에 대해서도 크게 좌우됨을 알 수 있었다. 열처리는 급속열처리 장치를 이용한 진공상태 및 환원 분위기에서 2-step 방법으로 시행하였다. 접합비 저항은 TLM 구조를 만들었으며 면저항$(R_s)$, 접촉저항$(R_c)$, 이동거리$(L_T)$, 패드간거리(d), 저항$(R_T)$ 값을 구하면 접합비저항$(\rho_c)$ 값을 구하여 알려진 계산식에 의해 추정하였다. 가장 양호한 결과는 Cu 금속에 의한 접촉 결과이었으며 접합비저항$(\rho_c)$은 $1.2\times10^{-6}{\Omega}cm^2$의 낮은 값을 얻을 수 있었다. 열처리는 진공보다 환원분위기에서 수행한 시편이 양호한 전기적 성질을 가짐을 알 수 있었다.

• Journal of Welding and Joining
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• v.14 no.3
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• pp.12-19
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• 1996

Spot 용접의 역사는 1877년에 E. Thomson이 발명한 것이지만 1886년 처음으로 저항 용접기의 특허를 취득할 때까지는 거의 실용화 되지 못하였다. 그 후 Thomson의 전기 용접기 회사가 저항 용접의 특허를 거의 독점한 관계로 커다란 발전없이 spot 용접에 관한 특허 분쟁이 해소된 1920년 이후 보급되기 시작하여 1935년경 부터 증가 하였다. 초기에는 주로 맞대기 용접에 이용되고 전선의 접합이나 크게는 rail의 용접 에까지 이르렀다. 금세기에 들어와서부터 spot 용접이나 seam 용접이 실용화되고 관련 용접 장치도 개발되었다. Spot 용접은 자동차 공업과 더불어 크게 발전하였으며 오늘 날에는 spot 용접 생산의 약 2/3를 자동차 공업이 점유하고 있다. Spot 용접은 고온 압접의 일종으로 각종 압접 방법중에서 가장 많이 사용되고 있는 것이다. 접합하고저 하는 부분에 직접 고전류를 통하고 그 전류에 의한 저항 발열로 용접부의 온도를 상승 시켜 용접하는 것으로서 극히 짧은 시간에 용접이 가능하고 고속, 고능률이므로 특히 다량 생산에 적합하다.

• Korean Journal of Materials Research
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• v.12 no.2
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• pp.117-120
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• 2002

We investigated the possibility of direct bonding of the Si ∥SiO$_2$/Si$_3$N$_4$∥Si wafers for Oxide-Nitride-Oxide(ONO) gate oxide applications. 10cm-diameter 2000$\AA$-thick thermal oxide/Si(100) and 500$\AA$-Si$_3$N$_4$LPCVD/Si (100) wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were premated wish facing the mirror planes by a specially designed aligner in class-100 clean room immediately. Premated wafer pairs were annealed by an electric furnace at the temperatures of 400, 600, 800, 1000, and 120$0^{\circ}C$ for 2hours, respectively. Direct bonded wafer pairs were characterized the bond area with a infrared(IR) analyzer, and measured the bonding interface energy by a razor blade crack opening method. We confirmed that the bond interface energy became 2,344mJ/$\m^2$ when annealing temperature reached 100$0^{\circ}C$, which were comparable with the interface energy of homeogenous wafer pairs of Si/Si.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.556-561
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• 2001

We prepared a new a SOS(silicon-on-silicide) wafer pair which is consisted of Si(100)/1000$\AA$-NiSi Si (100) layers. SOS can be employed in MEMS(micro- electronic-mechanical system) application due to low resistance of the NiSi layer. A thermally evaporated $1000\AA$-thick Ni/Si wafer and a clean Si wafer were pre-mated in the class 100 clean room, then annealed at $300~900^{\circ}C$ for 15hrs to induce silicidation reaction. SOS wafer pairs were investigated by a IR camera to measure bonded area and probed by a SEM(scanning electron microscope) and TEM(transmission electron microscope) to observe cross-sectional view of Si/NiSi. IR camera observation showed that the annealed SOS wafer pairs have over 52% bonded area in all temperature region except silicidation phase transition temperature. By probing cross-sectional view with SEM of magnification of 30,000, we found that $1000\AA$-thick uniform NiSi layer was formed at the center area of bonded wafers without void defects. However we observed debonded area at the edge area of wafers. Through TEM observation, we found that $10-20\AA$ thick amourphous layer formed between Si surface and NiSix near the counter part of SOS. This layer may be an oxide layer and lead to degradation of bonding. At the edge area of wafers, that amorphous layer was formed even to thickness of $1500\AA$ during annealing. Therefore, to increase bonding area of Si NiSi ∥ Si wafer pairs, we may lessen the amorphous layers.

• Journal of Broadcast Engineering
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• v.7 no.4
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• pp.355-361
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• 2002

In this paper, several methods which guarantee the seamless editing when the splicing is applied to the MPEG-2 system streams are described. In the MPEG-2 system standard, it is recommended that the splicing technique is applied in the Transport Stream(TS) domain. However, in view of the video editing, the splicing at an arbitrary picture unit can not be guaranteed. The splicing in the PES domain is only considered in this paper because the PES is one of the MPEG-2 system streams and this result could be directly extended to the video splicing techniques in the TS or PS domain. Thus. the problems that might occur when different two PES streams are spliced and its effects to the video quality are compared and analyzed. Based on this analysis. several methods that can resolve these problems directly in the PES domain are proposed. Consequently, the computer simulation demonstrates that the splicing at a GOP modulo is guaranteed to have good video quality even without considering the state of the PES packet only if the PES_packet_length field of the PES packet header is used.

• Journal of Korean Society of Steel Construction
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• v.29 no.6
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• pp.411-422
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• 2017

In this study, to investigate the seismic performance of beam-column joints using concrete-encased and -filled circular steel tube(CEFT) columns, two types of tests were performed: (1) column - flange tension test and (2) beam - column joint cyclic load test. In column - flange tension test, test parameters were concrete encasement and connection details: flange width and strengthening rebar. Five specimens were tested to investigate the load-carrying capacity and the failure mode. Test results showed that increase of flange width from 200mm to 350mm result in increase of connection strength and stiffness by 61% and 56%, respectively. Structural performances were further improved with addition of tensile rebars by 35% and 92%, respectively. In cyclic loading test, three exterior beam-column joints were prepared. Test parameters were strengthening details including additional tensile rebars, thickened steel tube, and vertical plate connection. In all joint specimens, flexural yielding of beam was occurred with limited damages in the connection regions. In particular, flexural capacity of beam-column joint was increased due to additional load transfer through tube - beam web connection. Also, connection details such as increase of tube thickness and using vertical plate connection were effective in improving the resistance of panel zone.

• Applied Microscopy
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• v.8 no.1
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• pp.77-79
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• 1978

Al-Si junctions were made by vacuum deposition of aluminium on to silicon wafers and examined by TEM. The uneven interfaces of the junctions are formed due to the surface tension of the molten solution resulting in preferential dissolution of silicon in aluminium at some areas. These undesirable uneven interfaces affect the junction shape and so the over-all characteristics of the devices.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2006.07a
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• pp.232-232
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• 2006

• Proceedings of the Optical Society of Korea Conference
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• 2005.02a
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• pp.170-171
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• 2005

• Proceedings of the Optical Society of Korea Conference
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• 2004.07a
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• pp.184-185
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• 2004