• Vacuum Magazine
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• v.3 no.4
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• pp.14-18
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• 2016

In this article, we will summarize recent advances in ultrahigh vacuum (UHV) low-temperature scanning tunneling microscopy (STM) during the last decade. Leading STM groups have finished or are constructing UHV milli-Kelvin high magnetic field STM capable of a few tens of milli-Kelvin and ~ 10 tesla. Applications with UHV sub-Kelvin high magnetic STM have been increased since mid-2000's. Active research using UHV low temperature tuning fork atomic force microscopes and UHV photon low-temperature scanning tunneling microscopes will be introduced. Considering these advances of UHV low-temperature STM we will discuss next trend in STM in the near future.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.3
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• pp.5-14
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• 2003

• Journal of the Korean Society for Nondestructive Testing
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• v.14 no.3
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• pp.157-171
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• 1994

A scanning tunneling microscope has been built, which can resolve atomic arrangements of conductors and semiconductors in ultra high vacuum below $10^{-11}$ Torr. Its background and operational principles are reviewed and the guide lines in building the scanning tunneling microscope are shown. The results of measurements for highly oriented pyrolytic graphite and Si(111) surface are presented.

• Electrical & Electronic Materials
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• v.9 no.6
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• pp.616-625
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• 1996

본 고에서는 최첨단 주사형 마이크로프로브현미경의 최근동향에 대해 기술하고자 한다. SNOAM의 관찰분야에의 응용이라는 관점에서 광학소자, 반도체재료, 유기박막등의 미소영역에의 광학특성의 관찰이외에 생물분야에서는 형광표식한 시료의 형상상과 형광상의 대비에서 세포나 생체고분자의 기능 해명에도 이용 가능하다고 생각된다. 또한 광가공기술에의 응용이나 기억소자 기술에의 응용도 고려되어져 금후의 응용분야에의 발전이 기대된다. 다가오는 21세기 정보화사회에서는 분자.원자를 제어하는 기술이 중심기술이 될 것으로 확신되고 있다. 그러나 현재 우리주변 기술로서 분자. 원자를 단위로 하는 평가, 분석 기술은 거의 찾을 수 없다. 따라서 주사형 마이크로 프로브 현미경은 Nano-technology로서 장래 정보화사회에 중요한 평가.분석기술의 하나로서 정착될것으로 생각된다.

• 한국전기화학회:학술대회논문집
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• 1998.10a
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• pp.17-17
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• 1998

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.9
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• pp.2272-2283
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• 1994

In scanning tunneling microscopy, the piezoelectric actuator is popuilarly used in stacked type as it can provide remarkable positioning resolution and stiffness. The actuator, however, exhibits a considerable amount of hystereic nonlinearity, resulting in losses of overall measuring accuracy when a linear model is used for its control and calibration, In this study, a nonlinear model is proposed for predicting the precise relationship between the input connand voltage and the output displacement of the actuator itself, cross-coupled electrical behaviours of the driving circuit with the actuator, and mechanical characteristics of the driven components of the actuator. Finally experimental results prove that the nonlinear model enhances the measuring of scanning tunneling microscopy by an order ten in comparison with a conventional linear model.

• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.375-380
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• 2008

We have investigated the low-dimensional nanostructures produced by adsorption of triangular Co coplexed dipyrromethane(DPM-trimer, Fig. 1) on graphite surface by using scanning tunneling microscope. DPM-trimer deposition on the graphite surface leads to the formation of long 1-D molecular wires and 2-D hexagonal patterns. We analyzed the heights and structures of 1-D molecular wires and 2-D hexagonal patterns. The 1-D molecular wires were formed 'edge-on' alignments on graphite surface result of continuos $\pi-\pi$ stacking interactions. The other case of 2-D hexagonal patterns were formed 'face-on' alignments on graphite surface.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.37-44
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• 2006

The homoepitaxy of Si(5 5 12) at $495^{\circ}C$ has been studied by Scanning Tunneling Microscopy under ultrahigh vacuum. A Si-dimer is the basic building-block and preferentially adsorbs on a unique site, that is, the Si-dimer/adatom site at the (337) and the (225) subsections within the Si(5 5 12) unit cell. The Si(5 5 12) unit cell is faceted to $3\times(337)$ subsections filled with Si-addimers and $1\times(113)$ subsection. In this step the tetramer at the other (337) section within the unit cell is transformed to a dimer/adatom site which can accept Si-dimers. Each (337) section is faceted to $1\times(112)\;and\;1\times(113)$, and then finally the unit cell of Si(5 5 12) is faceted to $3\tiems(112)\;and\;4\times(113)$ and forms the facet of effective height, $2.34{\AA}$. In this step, mutual transformation between the honeycomb chain and the dimer/adatom occurs. Finally, the valley between (112) and (113) facets is filled. If once the last step is completed, the uniform and planar Si(5 5 12) terrace is recovered. From the present study, therefore, it can be concluded that the homoepitaxy on Si(5 5 12) is periodically achieved and such growth mode is quite unique since faceting of the substrate-unit-cell plays a critical role for controlling uniformity of the overlayer.

• Journal of the KSME
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• v.32 no.5
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• pp.420-428
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• 1992

1980년대부터 새롭게 우리에게 다가온 nm의 세계는 그 동안 마이크로의 기술이 인류에게 가져다 준 성과 이상의 것을 약속하고 있다. Nanoscience와 Nanotechnology라는 용어가 차츰 일상적인 것이 되어가고 있으며 이들 기술을 응용한 제품들이 선을 보이고 있다. STM은, 개발된지 10년이 되는 현 시점에서 다른 분야들에 기술적으로 많은 파급효과를 끼쳤으며 STM자체의 성능도 크게 향상되었다. 앞으로도 성능 향상은 빠른 속도로 진행될 것이며 특히 단순한 측정장치를 넘어 가공과 제조장치로서 크게 기대가 된다. 다양한 형태로 결합된 개별 원자들의 성질을 측정함으 로써 거시적으로 나타나는 여러 복합적인 현상들을 근본적으로 이해할 수 있고 또 nm 수준에 서의 공정제어로 품질 좋은 무결점의 제품 생산을 가능하게 해 줄 것이다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.43-43
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• 2013

붕화질소(hexagonal Boron Nitride, h-BN)위의 그래핀은 산화규소(SiO2) 위에 전사된 그래핀에 비해서 월등한 전기적 특성을 갖는다. 따라서 전자소자의 산업적 응용을 위한 대면적화를 위하여, 그래핀을 붕화질소위에 화학증기증착(CVD) 방법을 통해 직성장시키고, 그 전기적 성질이 산화규소 및 suspended된 그래핀에 비해서 훨씬 더 이상적임을 원자 수준의 공간해상도에서 초고진공 저온 주사형 터널링 현미경(scanning tunneling microscope, STM)을 통해 입증하였다.