• Journal of architectural history
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• v.1 no.1 s.1
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• pp.267-281
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• 1992

This study maintains that settlement and dwelling system reflects socio-cultural value of the people to express their image of ideal-life and intrinsic way of life. To demonstrate it, the study is conducted on a cross-cultural perspective. Through the study, it is shown that the character and content of the settlement and dwelling system is largely generated by the result of a choice among possible alternatives, which provides the theoretical base of the settlement and dwelling system.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.7
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• pp.474-480
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• 2003

We designed and tested a new scan driver output stage. Compared to conventional CMOS structured scan driver IC′s, the new NMOSFET-only scan driver circuit can reduce the chip area and therefore, the chip cost considerably. We confirmed the circuit operation with open drain power NMOSFET IC′s by driving 2"PDP test panel. We defined critical device parameters and their optimization methods lot the best circuit performance.

• Proceedings of the Korea Information Processing Society Conference
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• 2002.11b
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• pp.921-924
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• 2002

기존의 보안 관점에서의 정보보호는 암호화, 인증과 접근제어를 이용하여 권한없는 접근을 방지하는 부분과 침입탐지와 같은 수동적인 관점에서 많이 연구되었다. 그러나 프로그램의 계속적인 취약성이 발견됨에 따라 보다 적극적인 방어 개념인 정보 생존성에 대한 연구도 활발히 이루어지고 있다. 본 논문에서는 정보 생존성에서 네트워크 관점에서 고장 또한 침입에 의한 결함에도 지속적인 네트워크 서비스를 제공할 수 있는 결함허용 네트워크에 대한 아키텍처를 제시한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.489-492
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• 1999

The effects of alternate bias stress on p-channel poly-Si TPT's has been systematically investigated. It has been shown that the application of alternate bias stress affects device degradation for the negative bias stress as well as device improvement for the positive bias stress. This effects have been related to the hot carrier injection into the gate oxide rather than the generation of defect states within the poly-Si/SiO$_2$ under bias stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.485-488
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• 1999

In this paper, the effects of back-gate bias on n-channel SOI MOSFETs has been systematically investigated. Back-gate surface is accumulated when negative bias is applied. It is found that the driving current ability of SOI MOSFETs is reduced because the threshold voltage and subthreshold slope are increased and transconductance is decreased due to the hole accumulation in Si body.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.190-191
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• 2006

In this paper, a method to assess the reliability of an insulating spacer used in gas insulated switchgear by electrical accelerated lifetime test is represented. And a test plan to assure the expected lifetime with 90 % confidence level is also included.

• YAKHAK HOEJI
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• v.41 no.6
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• pp.837-839
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• 1997

We have synthesized and evaluated (1S, 2R)-1-0-(ethoxycarbonyl)methyl-2,3-0-isopropylidene-1-phenyl-1,2,3-trihydroxypropane(5a) as a novel chiral auxiliary for opt ically active alpha-hydroxyesters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.461-463
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• 1999

In this paper, we have systematically investigated the variation of electrical characteristics with back-gate bias of n-channel SOI MOSFET\\`s. When positive bias is applied back-gate surface is inverted and back channel current is increased. When negative bias is applied back-gate surface is accumulated but it does not affect to the electrical characteristics.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2106-2108
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• 2005

This paper describes a method of lifetime expectation for the dry-type molded transformer which is widely used in the domestic distribution system. And the result of the temperature accelerated aging test for the winding insulation and the analyzed report on the reliability are included in this study.

• Proceedings of the Korea Institute of Convergence Signal Processing
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• 2003.06a
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• pp.213-216
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• 2003

UWB 통신 기술은 초광대역 특성 때문에 높은 전송 속도와 저전력 통신이 가능하여 의료장비에 응용이 가능하며, 특히 유선이라는 제약성으로 큰 불편을 겪고 있는 ECG시스템에 적용되어질 수 있다. 따라서 근거리 무선 통신 기술로 급부상하고 있는 UWB 통신 기술의 응용을 위해 UWB 신호 특성 및 변조 방식의 연구가 행하여져야 한다. 이에 본 논문에서는 UWB에 사용가능한 각종 펄스의 특성과 적용하고자 하는 시스템 환경에서 발생할 수 있는 UWB 신호의 간섭 영향을 분석하였으며, 간단한 UWB 송수신 시스템을 시뮬레이션 하였다.