Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Back-Gate Bias Effect of Ultra Thin Film SOI MOSFET's

초 박막 SOI MOSFET's 의 Back-Gate Bias 효과

  • 이제혁 (수원대학교 전자재료공학과) ;
  • 변문기 (수원대학교 전자재료공학과) ;
  • 임동규 (수원대학교 전자재료공학과) ;
  • 정주용 (수원대학교 전자재료공학과) ;
  • 이진민 (수원대학교 전자재료공학과)
  • Published : 1999.05.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, the effects of back-gate bias on n-channel SOI MOSFETs has been systematically investigated. Back-gate surface is accumulated when negative bias is applied. It is found that the driving current ability of SOI MOSFETs is reduced because the threshold voltage and subthreshold slope are increased and transconductance is decreased due to the hole accumulation in Si body.

Keywords