• Progress in Superconductivity
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• v.10 no.2
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• pp.99-102
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• 2009

We report our development of the fabrication process of sub-micron scale $Al-AlO_x-Al$ tunnel junction by using electron-beam lithography and double-angle shadow evaporation technique. We used double-layer resist to construct a suspended bridge structure, and double-angle electron-beam evaporation to form a sub-micron scale overlapped junction. We adopted an e-beam insensitive resist as a bottom sacrificing layer. Tunnel barrier was formed by oxidation of the bottom aluminum layer between the bottom and top electrode deposition, which was done in a separate load-lock chamber. The junction resistance is designed and controlled to be 50 $\Omega$ to match the impedance of the transmission line. The junctions will be used in the broadband shot noise thermometry experiment, which will serve as a link between the electrical unit and the thermodynamic unit.

• Journal of Conservation Science
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• v.28 no.2
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• pp.175-184
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• 2012

A purpose of this research is to find out characteristic of bronze artifacts and gold ornaments excavated from Xiongnu tombs No. 2~4 at Duurlig Nars in Mongolia through scientific analysis of them. The Tombs are comparatively small. There were still lots of relics remaining although the tombs had been already robbed. Also the tombs are evaluated important since the origin of them show coexisting of chinese and northern style. First of all, an analysis result about bronze vessels found in this site, they have high lead(Pb) content and relatively low tin(Sn) content, as compared with the Bronze Han Mirror and End-fittings of Bronze Parasol Rib. Especially in case of bronze tray and bronze lamp from the no. 2 tomb and also bronze cauldron from the no. 4 tomb contain only 1wt% of tin which means binary alloy composition(Cu-Pb). Also, in the case of gold ornaments found in the no. 2 tomb, they have comparatively high purity. And the research suppose that the high possibility of that they were used soldering using alloy of Au-Cu or diffused bonding(using malachite and copper oxide) for joining gold grains of gold granulation ornament. Further scientific research and analysis in Mongolia and other countries will provide more clues to solve mystery of Xiongnu culture.

• Proceedings of the Korea Water Resources Association Conference
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• 2017.05a
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• pp.176-176
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• 2017

배수시설 내 맨홀에서의 과부하 흐름은 관거시설의 배수 능력을 저하시켜 우수의 역류로 인한 도시 침수피해의 가중 요인이 된다. 특히, 도시 유역 중 하류부의 저지대에서 주로 설치되는 합류 맨홀은 저지대 침수에 많은 영향을 미치므로 합류맨홀에서의 흐름특성 분석 및 유입유량 변화에 따른 손실계수의 변화에 관한 연구가 필요한 실정이다. 현재까지 중간맨홀, $90^{\circ}$ 접합맨홀 및 3방향(T형) 합류맨홀 등에 관한 연구는 지속적으로 수행되고 있으나 4방향 합류맨홀에 관한 연구는 기초적인 연구만 수행되고 있다. 4방향 합류맨홀은 세 개의 유입관과 한 개의 유출관으로 구성되어 있으므로 각 유입관의 유입유량 변화에 따라서 맨홀에서의 손실계수가 다양하게 변화된다. 이와 같은 유입유량 변화에 따른 맨홀 내 흐름특성 분석 및 손실계수 산정에 관한 연구는 국내에서는 전무한 실정이다. 그러므로 유입유량 변화에 따른 4방향 합류맨홀에서의 손실계수 변화특성의 분석이 필요하다. 본 연구에서는 4방향 사각형 합류맨홀에서 세방향에서 유입되는 각 유입유량의 유입비($Q_{in}/Q_{out}$)가 0.0~1.0으로 변화하는 조건에서 평균 손실계수를 산정하기 위하여 하수도시설기준(환경부, 2011)의 표준 1호 맨홀 및 연결관경을 1/5로 축소하여 수리실험 장치를 제작하였다. 유출유량은 $3{\ell}/sec$이고 각 유입관(주유입관 및 좌 우측면유입관)의 유입유량을 $0{\sim}3{\ell}/sec$까지 유입유량의 비율을 각각 10%씩 변화시키면서 수리실험을 실시하였다. 실험결과 주관거의 유입유량이 줄어들고 측면관거의 유입유량이 늘어나면서 손실계수가 상승하는 것으로 나타났으며, 한쪽 측면 관거에서만 유입유량이 들어오는 $90^{\circ}$ 접합맨홀의 형태에서 손실계수가 가장 크게 나타났으며, 유입유량 변화에 따른 4방향 합류맨홀에서의 손실계수의 범위는 0.5~1.7으로 산정되었다. 이는 과부하 4방향 사각형 합류맨홀에서는 측면 유입관에서의 유입유량의 증가에 따라 평균 손실계수 값이 크게 증가되는 것으로 판단된다. 이는 김정수(2010) 등이 산정한 $90^{\circ}$ 접합맨홀의 손실계수 및 중간맨홀의 손실계수와 유사하게 나타났으므로 전체적인 손실계수의 범위는 타당하다고 판단된다. 또한, Wang(1988) 등의 유사연구와의 유입유량 변화에 따른 손실계수의 변화 경향도 유사하였다. 따라서 본 연구에서 산정된 유입유량 변화 조건이 고려된 4방향 합류맨홀에서의 손실계수는 XP-SWMM 등의 부정류 흐름이 고려된 도시지역의 침수해석이나 관거 배수능력 평가에 활용이 가능할 것으로 판단된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.514-519
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$as a dielectrical isolation layer a SDB SOI Hall sensor without pn junction has been fabricated on the Si/ $SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to 30$0^{\circ}C$ the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than $\pm$6.7$\times$10$_{-3}$ and $\pm$8.2$\times$10$_{-4}$$^{\circ}C$ respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

• Journal of Welding and Joining
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• v.28 no.6
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• pp.76-83
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• 2010

The purpose of this study is to propose a method to decide near-optimal settings of the constant current fuzzy control parameters using a controlled random search. This method tries to find the near-optimal settings of the constant current fuzzy control parameters through experiments. It has an advantage of being able to carry out searches in the search domain which includes some irregular points. The method suggested in this study was used to determine the fuzzy control parameters by which the desired welding current were formed during inverter DC resistance spot welding. The output variable was the ITAE (integral of time multiplied by the absolute error). This output variable was determined according to the input variables, which are the GE, GDE, and GDU. This study described how to obtained near-optimal welding current condition over a wide search space conducting a relatively small number of experiments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.334-337
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• 2002

The Quantum Hall Resistance(QHR) device which consists of GaAs/AlGaAs heterojunction structure is used for the realization of QHR Standard based on QHE. In order to characterize electrical contact resistances and dissipations of the device, it is slowly cooled down for eliminating thermal shock and unwanted noise. Then, the two properties are measured under 1.5 K and 5.15 T. Contact resistances are all within 1.2 Ω and longitudinal resistivities are all within 1 mΩ up to DC 90${\mu}$A. The results mean the device is operated well to realize the QHR Standard. To confirm it, the QHR Standard having the device is compared using a direct current comparator bridge with a 1 Ω resistance standard which the calibrated value is known from QHR standards maintained by other countries. The difference between them is agreed well within measurement uncertainty. It is thus considered that the properties of the device is estimated well and has good performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.29-33
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than ${\pm}6.7{\times}10^{-3}/^{\circ}C$ and ${\pm}8.2{\times}10^{-4}/^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

• Journal of Welding and Joining
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• v.21 no.3
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• pp.51-57
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• 2003

The metal transfer in $CO_2$ welding shows the transition of transfer mode from short-circuiting to repelled transfer will the increase of welding current. While the short-circuiting mode in $CO_2$ welding has been studied very extensively relating with droplet formation and spatter generation, the repelled transfer has little been understood. In this study, high current $CO_2$ welding has been performed with bead-on-plate welds along with the waveform analyzer and high speed camera. The image of high speed camera was synchronized with its waveform so that the moment of spatter generation could be realized during drop detachment. As a results of this study, it was found that welding arc changes its location either once or three times and thus single or double pulse signals were developed in the voltage waveform. Whenever the arc moved its location, new arc was developed in a explosive way and thus it caused spatter generation. Specially severe spattering took place when the waveform showed a double-peak pattern. As a consequence of these results, new waveform control techniques could be suggested for suppressing the spatter generation in the high-current $CO_2$ welding.

• Journal of Welding and Joining
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• v.23 no.3
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• pp.54-60
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• 2005

Tungsten Inert Gas(TIG) welding is today one of the most popular arc welding process because of its high quality welds and low equipment costs. Even if welding productivity increases with welding speed and current, this strategy is limited by the appearance of defects such as undercut and humping bead due to the depressed molten metal. The purpose of this study investigates the effect of He mixing ratio on the characteristics with high current and speed in TIG welding. The conclusions obtained permit to explain the arc start characteristics quantitatively and the maximum welding speed on stable bead formation with He mixing ratio for high current and speed TIG welding observed in experiments. Also through the relation of the maximum arc pressure and surface depression depth at high current and speed TIG welding, it made clear the mechanism of unstable bead formation.

• Progress in Superconductivity
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• v.11 no.2
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• pp.96-99
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• 2010

We measured electrical shot noise in a metal-insulator-metal tunnel junction, which was made by using electron-beam lithography and double-angle evaporation technique. Since the dependence of the shot noise on bias voltage and temperature is theoretically well known, we can determine the temperature of the junction by measuring the noise as the voltage across the junction is changed. A cryogenic low noise amplifier was used to amplify the noise signal in the frequency range of 600-800 MHz, which enabled fast measurement of noise signal and thus temperature. With further study, this method could be useful for primary thermometry in cryogenic temperatures.