• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.10
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• pp.1927-1934
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• 2016

In this paper, we proposed a I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistor) structure in order to mitigate a radiation-induced leakage current path in an isolation oxide interface of a silicon-based standard n-MOSFET. The proposed I-gate n-MOSFET structure was designed by using a layout modification technology in the standard 0.18um CMOS (Complementary Metal Oxide Semiconductor) process, this structure supplements the structural drawbacks of conventional radiation-tolerant electronic device using layout modification technology such as an ELT (Enclosed Layout Transistor) and a DGA (Dummy Gate-Assisted) n-MOSFET. Thus, in comparison with the conventional structures, it can ensure expandability of a circuit design in a semiconductor-chip fabrication. Also for verification of a radiation-tolerant characteristic, we carried out M&S (Modeling and Simulation) using TCAD 3D (Technology Computer Aided Design 3-dimension) tool. As a results, we had confirmed the radiation-tolerant characteristic of the I-gate n-MOSFET structure.

• Polymer(Korea)
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• v.38 no.6
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• pp.752-759
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• 2014

Crosslinked polyimides (PIs) were synthesized by reacting 4,4'-(hexafluoroisopropylidene)-diphthalic anhydride (6FDA) and 2,2'-bis(trifluoromethyl)benzidine (TFDB) with various ratios of the cross-linkable, end-capping agent cis-1,2,3,6-tetrahydrophthalic anhydride (CDBA) via ring-opening metathesis polymerization. Residual stress behaviors were investigated in-situ during thermal imidization of the crosslinked PI precursors using a thin film stress analyzer (TFSA) by wafer bending method. The thermal properties were investigated via differential scanning calorimetry (DSC), thermomechanical analysis (TMA), and thermogravimetric analysis (TGA). The optical properties were measured by ultraviolet-visible spectrophotometer (UV-vis) and spectrophotometry. All properties were interpreted with respect to their morphology of crosslinked networks. With increasing the amounts of the end-capping agent, the residual stress decreased from 27.9 to -1.3 MPa, exhibited ultra-low stress and high thermal properties. The minimized residual stress and enhanced thermal properties of the crosslinked PI makes them potential candidates for versatile high-density multi-layer structure applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.7
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• pp.671-677
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• 2013

In this paper, we propose a method of near-field analysis for vehicle LF antennas in order to estimate the accurate reading range of a smart key. The LF antenna consists of a ferrite core and a conducting wire which is coated with polyethylene for insulation, and it is mounted at the rear bumper frame of a commercial vehicle. The reading range of a smart key is measured at nine azimuthal directions distributed around the rear bumper, and then, the received power at each maximum reading range is measured by using a spectrum analyzer. The measurement shows that the maximum reading range exists between 1.38 m and 1.53 m, and the radiated power is between -83.6 dBmW and -75.0 dBmW. We further conducted EM simulation to estimate the reading range and the received power under the same condition that we applied for the measurement. The results demonstrate that an accurate reading range and received power can be achieved by simulation.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.12
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• pp.599-606
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• 2001

In this paper, the ac breakdown characteristics of pure Ar, Kr and $N_2$ gas with gas pressure range of 58.8-137.3[kPa] under uniform and non-uniform fields were investigated, and the measured values were compared with those In Ar/$N_2$ and Kr/$N_2$ gas mixtures with pressure varying. Summarizing the experimental results, the breakdown voltages of Pure $N_2$gas, under uniform and non-uniform fields, were increased about 4.8 and 1.1 times than those of pure Ar gas, and about 4.4 and 1.2 times than those of pure Kr gas, and the ac breakdown voltage increased with the pressure increasing. The breakdown voltages of Ar/$N_2$ gas mixtures were decreased with decreasing the mixture ratio of Pure $N_2$ gas. In case of Ar(85%)/$N_2$ (15%) and Ar(70%)/$N_2$ (30%) gas mixtures comparing to the pure Ar gas, the breakdown voltages under uniform field were increased about 1.8 and 2.2 times, and under non-uniform field were increased about 1.1 and 1.3 times at the pressure of 101.3[kPa]. Also, in case of Kr(85%)/$N_2$ (15%) and Kr(70%)/$N_2$ (30%) gas mixtures comparing to the pure Kr gas, the breakdown voltages under uniform field were increased about 1.7 and 2.0 times, and under non-uniform field were increased about 1.0 and 1.2 times. Corona inception voltage of Kr(70%)/$N_2$(30%) gas mixtures under non-uniform fields were increased about 1.28 times than those of Ar(70%)/$N_2$ (30%) gas mixtures. In case of practical incandescent lamps, luminous and lifetime of Kr(70%)/$N_2$ (30%) gas mixtures were increased about 1.15 and 1.21 times than those of Ar(70%)/$N_2$ (30%) gas mixtures.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.7
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• pp.1393-1398
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• 2009

Conventionally, etching is first considered for microelectronics fabrication process and is specially important in process of a-Si:H thin film transistor for LCD. In this paper, we stabilize properties of device by development of wet and dry etching process. The a-Si:H TFTs of this paper is inverted staggered type. The gate electrode is lower part. The gate electrode is formed by patterning with length of 8 ${\mu}$m${\sim}$16 ${\mu}$m and width of 80${\sim}$200 ${\mu}$m after depositing with gate electrode (Cr) 1500 ${\AA}$under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photo resistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN:H (2000 ${\mu}$m), a-Si:H(2000 ${\mu}$m) and n+a-Si:H (500 ${\mu}$m), We have deposited n-a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. In the fabricated TFT, the most frequent problems are over and under etching in etching process. We were able to improve properties of device by strict criterion on wet, dry etching and cleaning process.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.6
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• pp.1047-1055
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• 2006

We patterned nano-width lines on a super hard bulk diamond substrate by varying the ion beam current and ion beam sources with a dual beam field ion beam (FIB). In addition, we successfully fabricated two-dimensional nano patterns and three-dimensional nano plate modules. We prepared nano lines on a diamond and a silicon substrate at the beam condition of 30 kV, 10 pA $\sim$ 5 nA with $Ga^+$ ion and $H_2O$ assisted ion sources. We measured each of the line-width, line-depth, etched line profiles, etch rate, and aspect ratio, and then compared them. We confirmed that nano patterning was possible on both a bulk diamond and a silicon substrate. The etch rate of $H_2O$ source can be enhanced about two times than that of Ga source. The width of patterns on a diamond was smaller than that on a silicon substrate at the same ion beam power The sub-100 nm patterns on a diamond were made under the charge neutralization mode to prevent charge accumulation. We successfully made a two-dimensional, 240 nm-width text of the 300-lettered Lord's Prayer on a gem diamond with 30 kV-30 pA FIB. The patterned text image was readable with a scanning electron microscope. Moreover, three dimensional nano-thick plate module fabrication was made successfully with an FIB and a platinum deposition, and electron energy loss spectrum (EELS) analysis was easily performed with the prepared nano plate module.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.4
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• pp.504-510
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• 2017

This paper presents an AC-DC power module design and evaluates its efficiency and reliability when used for electronics appliances. This power module consists of a PWM control IC, power MOSFETs, a transformer and several passive devices. The module was tested at an input voltage of 220V (RMS) (frequency 60 Hz). A test was conducted in order to evaluate the operation and power efficiency of the module, as well as the reliability of its protection functions, such as its over-current protection (OVP), overvoltage protection (OVP) and electromagnetic interference (EMI) properties. Especially, we evaluated the thermal shut-down protection (TSP) function in order to assure the operation of the module under high temperature conditions. The efficiency and reliability measurement results showed that at an output voltage of 5 V, the module had a ripple voltage of 200 mV, power efficiency of 73 % and maximum temperature of $80^{\circ}C$ and it had the ability to withstand a stimulus of high input voltage of 4.2 kV during 60 seconds.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.2
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• pp.147-153
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• 2016

The lightning protection of information and communication facilities is very important factor to improve a reliability of the action of these equipment. Especially the transient potential rise of ground electrode being injected with the lightning current is to be a basic data of the dielectric strength for both power and communication facilities so that more accurate analysis should be required. The transient potential rise can be calculated from the ground impedance and the ground impedance is strongly dependent upon the shape of the ground electrode and the frequency-dependence of soil. The Debye's equation which is able to calculate the characteristics of dielectrics is used to analyze the frequency-dependent of soil. Also, the method to calculate the transient potential rise from the ground impedance is specified in this paper. In order to analyze the transient potential rise resulting from calculations with Debye's equation, TLM(transmission line method) and case of ${\rho}$(resistivity)-constant are simulated, respectively. The length of a horizontal ground electrode is 30 m and simulations were performed at 10, 100, $1000{\Omega}{\cdot}m$ with the standard lightning current waveform. In result, the transient potential rise of horizontal ground electrode calculating with Debye's equation is lower than it of other models.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.6
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• pp.1099-1103
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• 2007

TFT's have been intensively researched for possible electronic and display applications. Through tremendous engineering and scientific efforts, a-Si:H TFT fabrication process was greatly improved. In this paper, the reason on defects occurring at a-Si:H TFT fabrication process is analyzed and solved, so a-Si:H TFT's yield is increased and reliability is improved. The a-Si:H TFT of this paper is inverted staggered type TFT. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr). We have fabricated a-SiN:H, conductor, etch-stopper and photo-resistor on gate electrode in sequence, respectively. We have deposited n+a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-slower pattern. The NPR layer by inverting pattern of upper Sate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFT made like this has problems at photo-lithography process caused by remains of PR. When sample is cleaned, this remains of PR makes thin chemical film on surface and damages device. Therefor, in order to improve this problem we added ashing process and cleaning process was enforced strictly. We can estimate that this method stabilizes fabrication process and makes to increase a-Si:H TFT's yield.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.12
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• pp.2335-2342
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• 2007

Laser stimulation has been widely studied and used in clinic. However, electrical response by laser stimulation on meridians has not been investigated. In this study, we compared electric potential of laser and acupuncture stimulation on meridians. We measured electric potential variation at acupoints(Samgan(LI3) and Hapgok(LI4)) on Large Intestine Meridian. In laser stimulation results, average peak electric potential is very low($7.53{\pm}3.44{\mu}V$) for before and after stimulation. However, acupuncture stimulation was performed in ground connection condition and resulted in huge variation of average peak electric potential($2.65{\pm}1.53mV$). That is, the intensity and pattern of electric potential were dependent on the ground connection condition and individual. Also, the electric potential pattern was very similar to the pattern of electric charge and discharge of capacitor. The acupuncture stimulation using a insulating needle resulted in lower average peak electric potential variation($0.25{\pm}0.16mV$) than that of acupuncture stimulation. It might present little electrical response of acupuncture stimulation using insulating needles. In point of electrical response, the laser stimulation was determined to be no acupuncture effect at meridian. Acupuncture stimulation seems to be most effective method to induce electrical response at meridians. The procedure and effect of acupuncture might be considered as energy consensus phenomenon by transportation of bio-ion charge between a practitioner and patient.