• Resources Recycling
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• v.26 no.6
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• pp.65-72
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• 2017

APT (Ammonium paratungstate) is widely used in various industries such as metal cutting tools, drill bits, mining tools, and military inorganic materials. In order to produce high purity APT(S), an impurity purification step in an aqueous $Na_2WO_4$ convert $H_2WO_4$ solution is required. It is difficult to remove impurity Na of 200 ppm or less when $H_2WO_4(S)$ is prepared by adding HCl(Aq) to an aqueous solution of $Na_2WO_4$, which is a well-known conventional wet method. However, in this study, a more economical and efficient method of removing Na through electrodialysis using a cationic membrane was studied. A large amount of Na in aqueous solution of $H_2WO_4$ due to $Na_2CO_3(S)$ which was added to dissolve waste tungsten carbide drill and scrap was removed to 20ppm or less through electrodialysis process, and it was confirmed that the effect of Na removal was great when using electrodialysis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.5
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• pp.187-192
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• 2011

Tilt angle of r-plane wafer is a one of the important factors related with the quality of the GaN epi, so the fine control of the tilt angle is important for the growing of high quality non-polar a-GaN epi. We prepared the R-plane sapphire wafers with slight tilt angles for nonpolar a-plane GaN. The target tilt angles of ${\alpha}$ and ${\beta}$ were 0, -0.1, -0.15, -0.2, -0.4, $-0.6^{\circ}$ and -0.1, 0, $0.1^{\circ}$, respectively. The tilt angles of sliced R-plane sapphire wafers were measured by x-ray and the statistical evaluation of reliability of tilt angles of wafers were performed. The tolerance of the tilt angle was ${\pm}0.03^{\circ}$. R-plane sapphire wafers have relatively large distributions of BOW and TTV data than c-plane sapphire wafers due to the large anisotropy of R-plane. As the tilt angle ${\alpha}$ was increased from -0.1 to $-0.6^{\circ}$, the step widths and heights were decreased from 156 nm to 26 nm and 0.4 nm to 0.2 nm, respectively. The growth and qualities of GaN epi seems to be largely affected by the change of step structure of R-plane sapphire wafers with tilt angle.

• Korean Journal of Food Science and Technology
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• v.22 no.4
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• pp.456-460
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• 1990

The processing conditions for the production of meat snack were investigated by using a Bonnot Single-screw extruder Pork and thicken meat were mixed with corn flour in various ratios, respectively, and extruded at different screw speeds(120-260 rpm). As the meat content was increased, the expansion ratio, water absortion index, lightness and yellowness of the extrudate were decreased. The expansion ratio tended to increase with an increase in screw speed, but the opposite relationship was observed with the maximum meat content(meat corn flour=2:1). The maximum water absorption ratio was obtained at the screw speed of 190rpm when the meat content was relatively low, but it moved to 120 rpm as the meat content was increased. The bulk density of the extrudate was significantly increased as the meat content exceeded 50% and no significant differences in bulk density was found at the highter meat content. The redness increased as the moisture content was increased. The maximum breaking strength was attained at the meat-corn flour ratio 1 : 1, and the breaking strength tended to decreased as the screw speed increased.

• Resources Recycling
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• v.22 no.2
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• pp.22-28
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• 2013

In the present study, the possibility of recovering and recycling the silicon carbide(SiC) from a silicon sludge by removing Fe and Si impurities was investigated. Si and SiC were separated from the silicon sludge using centrifugation. The separated SiC concentrate consisted of Fe, Si and SiC, in which Fe and Si were removed to recover the pure SiC. Leaching with acid/alkali solution was compared with the vapor-phase chlorination. The Fe concentration removed in the SiC was 49 ppm, and it was separated by leaching with 1 M HCl solution at $80^{\circ}C$ for 1 h. The Si concentration removed in the SiC was 860 ppm, and it was separated by leaching with 1M NaOH solution at $50^{\circ}C$ for 1 h. The SiC concentrate was chlorinated in a tubular reactor, 2.4 cm in diameter and 32 cm in length. The boat filled with SiC concentrate was located at the midpoint of the alumina tube, then, the chlorine and nitrogen gas mixture was introduced. The Fe and Si concentration removed in the SiC were 48 ppm and 405 ppm, respectively, at $500^{\circ}C$ reactor temperature, 4 h reaction time, 300 cc/min gas flow rate, and 10% $Cl_2$ gas mole fraction.

• KSBB Journal
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• v.18 no.3
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• pp.211-216
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• 2003

The removal yield of dissolved organic matter in drinking water by biological activated carbon (BAC) process was investigated. The tested processes wer raw water-AC process (BAC1), raw water-ozonation-BAC process (BAC2), and raw water-ozonation-coagulation/sedimentation-BAC process (BAC3). The amounts of organic matter was measured as dissolved organic carbon (DOC), ulta-violet radiation at 254 nm wavelength ($UV_{254}$), total nitrogen (T-N), ammonia nitrogen (NH_3$-N), and total phosphate (T-P). As a results, 30.7% DOC was removed by BAC2 process, which showed higher removal efficiency than BAC1 or BAC3 processes. The removal yield of $UV_{254}$ in BAC1, BAC2, and BAC3 processes were observed as 45.3%, 44.6%, 58.4%, respectively. And the removal yield of ammonia nitrogen were 66%, 81%, 29% in each BAC processes. The optimal empty bed contact time (EBCT) of BAC processes was estimated as 10 minute. This study has shown that BAC process combined with ozone treatment was efficient for removing dissolved organic matter in water.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.21 no.1
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• pp.21-29
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• 1988

This study was carried out to develop the powdered Katsuobushi (a kind of boiled, smoked, and dried fish product which is used for seasoning soup as it is.) using skipjack as a natural flavoring substance. The processing conditions of the powdered Katsuobushi and the changes of taste compounds during processing of the products were examined. In preparation of the powdered Katsuobushl, frozen skipjack was thawed, beheaded, gutted, filleted and then sliced to 1cm of thickness. The silted meats were boiled in skipjack extract for 20 minutes, and then it was smoked for, 3 times to $10\~12\%$ moisture content at $80^{\circ}C$ for 8 hours. The smoked - dried meats were followed to be 50 mesh of particle size. The effect of slicing and boiling in skipjack meat extract on enhancing flavor and on preventing lipid oxidation of product during processing were observed. The moisture content and crude lipid content of the powdered Katsuobushi was in the range of 11 to $12\%$ and 4.3 to $4.8\%$, respectively. The taste compounds of the product were nucleotides and their related compounds, 1135.8mg/100g ; free amino acid and related compounds, 2210.2mg/100g ; non-volatile organic acids, 1148.0mg/100g ; and total creatinine. 592.1mg/100g on dry basis, and small amount of betaine and TMAO. The major elements of mineral in the product were found to be K, Mg, Na, and Ca. The content of IMP was 542.0mg/100g, and major free amino acids were found to be histidine, anserine, taurine, carnosine and alanine of which occupied to $83.6\%$ of total free amino acids. In non -volatile organic acids, major ones were lactic acid, succinic acid, pyroglutamic acid and $\alpha-ketoglutaric$ acid. From the results of the chemical experiments and sensory evaluation, we may conclude that the flavor of the product from present experiment is more desirable than that of conventional products although the processing time used were much shortened than that of conventional method, and it can be commercialized as a seasoning powder.

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.1-8
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• 2004

The SOI wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by TRIM simulation that 65 keV proton implantation is required for the standard SOI wafer (200 nm SOI, 400 nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the 6∼$9\times10^{16}$ $H^{+}/\textrm{cm}^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. The depth distribution of implanted hydrogen has been experimentally confirmed by ERD and SIMS measurements. The microstructure evolution in the damaged layer was also studied by X-TEM analysis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.5
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• pp.190-195
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• 2014

Because of the temperature gradient occurring during the growth of the ingot with directional solidification method, defects are generated and the residual stress is produced in the ingot. Changing the growth and cooling rate during the crystal growth process will be helpful for us to understand the defects and residual stress generation. The defects and residual stress can affect the properties of wafer. Generally, it was found that the size of grains and twin boundaries are smaller at the top area than at the bottom of the ingot regardless of growth and cooling condition. In addition to that, in the top area of silicon ingot, higher density of dislocation is observed to be present than in the bottom area of the silicon ingot. This observation implies that higher stress is imposed to the top area due to the faster cooling of silicon ingot after solidification process. In the ingot with slower growth rate, dislocation density was reduced and the TTV (Total Thickness Variation), saw mark, warp, and bow of wafer became lower. Therefore, optimum growth condition will help us to obtain high quality silicon ingot with low defect density and low residual stress.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.1
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• pp.140-148
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• 2004

A novel rapid prototyping (RP) process, a full-automated transfer type variable lamination manufacturing process (Full-automated VLM-ST) has been developed. In the full-automated VLM-ST process, a vacuum chuck and a rectilinear motion system transfer the EPS foam material in the form of the plate with two pilot holes to the rotary supporting stage. The supplied material is then cut into an automated unit shape layer (AUSL) with a desired width, a desired length, a desired slope on the side surface, and a pair of reference shapes, which is called the guide shape (GS)’, including two pilot holes in accordance with CAD data through cutting in two steps using a four-axis synchronized hotwire cutter. Then, each AUSL is stacked by setting each AUSL with two pilot holes in the building plate with two pilot pins, and subsequently, adhesive is applied onto the top surface of the stacked AUSL by a bonding roller and pressure is simultaneously given to the bottom surface of the stacked AUSL. Finally, three-dimensional shapes are rapidly and automatically fabricated. This paper describes the method to generate guide shapes in AUSL data for the full-automated VLM-ST process. In order to examine the applicability of the method to generate guide shapes, three-dimensional shapes, such as a piston shape and a human head shape, are fabricated from the full-automated VLM-ST apparatus.

• Resources Recycling
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• v.21 no.4
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• pp.60-68
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• 2012

Silicon wafer for making semiconductor devices and solar cell is used in the semiconductor and solar industry, respectively. Silicon wafer is produced by cutting with silicon ingot and sludge contains silicon occurs from cutting process. Generation of silicon sludge is increasing on developing all industry sectors which have need of semiconductor device. These days it has been widely studied for the recycling technologies of the silicon sludge from view points of economy and efficiency. In this paper, patents and paper on the recycling technologies of the silicon sludge were analyzed. The range of search was limited in the open patents of USA (US), European Union (EU), Japan (JP), Korea (KR) and SCI journals from 1982 to 2011. Patents and journals were collected using key-words searching and filtered by filtering criteria. The trends of the patents and journals was analyzed by the years, countries, companies, and technologies.